SEMICONDUCTOR DEVICE
    12.
    发明公开

    公开(公告)号:US20240321735A1

    公开(公告)日:2024-09-26

    申请号:US18601467

    申请日:2024-03-11

    CPC classification number: H01L23/528 H10B12/00

    Abstract: A semiconductor device includes a substrate, a word line extending on the substrate in a first horizontal direction, a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, and a spacer structure on one sidewall of the bit line, wherein the bit line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer stacked in a vertical direction on the substrate, and the spacer structure includes a depletion stopping layer on one sidewall of the lower conductive layer, extending in the vertical direction and including a material layer having an interfacial trap density less than an interfacial trap density of a silicon nitride layer, and an inner spacer extending in the vertical direction and on one sidewall of the depletion stopping layer.

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