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公开(公告)号:US11205485B2
公开(公告)日:2021-12-21
申请号:US16935598
申请日:2020-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung-Bum Kim , Min-Su Kim , Deok-Woo Lee
IPC: G11C16/10 , G11C16/04 , G11C16/08 , G11C16/34 , H01L25/065 , H01L25/18 , H01L23/00 , H01L27/11556 , H01L27/11582
Abstract: A memory device includes: a memory cell region; a peripheral circuit region; a memory cell array; a control logic circuit; and a row decoder. The row decoder is configured to activate string selection lines based on control of the control logic circuit. A program interval is formed between a first program operation and a second program operation. The control logic circuit includes a reprogram controller configured to control the row decoder so that a program interval differs in the memory cells connected to different string selection lines among the memory cells connected to a first wordline.
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公开(公告)号:US10651828B2
公开(公告)日:2020-05-12
申请号:US15623412
申请日:2017-06-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun-Chul Hwang , Ah-Reum Kim , Min-Su Kim
IPC: H03K3/012 , H03K3/3562 , H03K3/356 , H03K19/21
Abstract: A flip-flop generates a first feedback signal using a signal generated inside the flip-flop. The flip-flop includes a first stage circuit, a second stage circuit and a third stage circuit. The first stage circuit receives a first data signal and a clock signal and generates a first internal signal through a first node. The second stage circuit receives the first internal signal, the clock signal, and the first feedback signal and generates a second internal signal through a second node. The third stage circuit generates a second data signal by latching the second internal signal when the clock signal is at a first level, using the second internal signal and the clock signal. The second stage circuit cuts off at least one first current path between the second node and a power supply, based on the first feedback signal, when the clock signal is at a second level.
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公开(公告)号:US10587246B2
公开(公告)日:2020-03-10
申请号:US16212193
申请日:2018-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Min-Su Kim
IPC: H03K3/356 , H03K3/012 , G01R31/3185
Abstract: Provided is a semiconductor circuit which includes a first circuit configured to determine a voltage level of a feedback node based on a voltage level of input data, a voltage level of a latch input node, and a voltage level of a clock signal, a second circuit configured to pre-charge the latch input node based on the voltage level of the clock signal, a third circuit configured to pull down the latch input node based on the voltage level of the feedback node and the voltage level of the clock signal, a latch configured to output output data based on the voltage level of the clock signal and the voltage level of the latch input node, and a control circuit included in at least one of the first to third circuits and the latch and configured to receive the control signal.
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公开(公告)号:US10436836B2
公开(公告)日:2019-10-08
申请号:US15332305
申请日:2016-10-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Min-Su Kim
IPC: G01R31/317 , G01R31/3177 , G01R31/00 , G01R31/3185
Abstract: An unbalanced multiplexer and a scan flip-flop including the unbalanced multiplexer, wherein the unbalanced multiplexer includes a first transmission circuit transmitting a first input signal to an output terminal according to a logic state of a selection signal; and a second transmission circuit transmitting a second input signal to the output terminal according to the logic state of the selection signal. A delay characteristic of a first transmission path from a first input terminal to the output terminal along which the first input signal of the first transmission circuit is transmitted, and a delay characteristic of a second transmission path from a second input terminal to the output terminal along which the second input signal of the second transmission circuit is transmitted, are set differently.
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公开(公告)号:US10353000B2
公开(公告)日:2019-07-16
申请号:US15479310
申请日:2017-04-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doo-Seok Yoon , Min-Su Kim , Chung-Hee Kim , Dae-Seong Lee , Hyun Lee , Matthew Berzins , James Lim
IPC: G01R31/3177 , H03K3/037 , G01R31/317
Abstract: A multi-bit flip-flop includes: a single scan input pin to receive a scan input signal, a plurality of data input pins to receive first and second data input signals, a first scan flip-flop to select one of the scan input signal and the first data input signal as a first selection signal in response to a scan enable signal and to latch the first selection signal to provide a first output signal, a second scan flip-flop to select one of an internal signal corresponding to the first output signal and the second data input signal as a second selection signal in response to the scan enable signal and to latch the second selection signal to provide a second output signal, and a plurality of output pins to output the first and second output signals, wherein scan paths of the first and second scan flip-flops are connected to each other.
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公开(公告)号:US10184984B2
公开(公告)日:2019-01-22
申请号:US15140720
申请日:2016-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun-Chul Hwang , Dae-Seong Lee , Min-Su Kim
IPC: G01R31/28 , G01R31/3185
Abstract: An integrated circuit and an electronic apparatus including the same. The electronic apparatus includes a scan input processing circuit, a selection circuit and a scanning circuit. The scan input processing unit is configured to output one of a scan input and a first logical value in response to a scan enable signal. The selection unit is configured to select one of an output of the scan input processing unit or a data input in response to the scan enable signal. The scan element comprises a flip-flop configured to store an output of the selection unit.
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公开(公告)号:US20180151218A1
公开(公告)日:2018-05-31
申请号:US15691828
申请日:2017-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: CHANG-HO YUN , Min-Su Kim , Sung-Joon Kim , So-Ra Park , Hyun-Jung Yoo
IPC: G11C11/406 , G06F3/06
CPC classification number: G11C11/40611 , G06F3/0619 , G06F3/0659 , G06F3/0673 , G11C11/40618
Abstract: A method of operating a memory device, a first setting signal is received by a first memory device among a plurality of memory devices. The first memory device has a first storage capacity, and the memory devices may be connected to one another by a single channel. A second setting signal is received by a second memory device among the plurality of memory devices. The second memory device has a second storage capacity different from the first storage capacity. N refresh operations are performed by the first memory device based on a first refresh command and the first setting signal during a first refresh period. M refresh operations are performed by the second memory device based on a second refresh command and the second setting signal during a second refresh period. A duration of the second refresh period is substantially the same as a duration of the first refresh period.
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公开(公告)号:US11315646B2
公开(公告)日:2022-04-26
申请号:US17141408
申请日:2021-01-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung-Bum Kim , Min-Su Kim , Deok-Woo Lee
Abstract: A memory device includes: a memory cell array; a control logic circuit; and a row decoder. The row decoder is configured to activate string selection lines based on control of the control logic circuit. A program interval is formed between a first program operation and a second program operation. The control logic circuit includes a reprogram controller configured to control the row decoder so that a program interval differs in the memory cells connected to different string selection lines among the memory cells connected to a first wordline.
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公开(公告)号:US11049577B2
公开(公告)日:2021-06-29
申请号:US16299684
申请日:2019-03-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung-Bum Kim , Min-Su Kim , Deok-Woo Lee
Abstract: A memory device includes: a memory cell array; a control logic circuit; and a row decoder. The row decoder is configured to activate string selection lines based on control of the control logic circuit. A program interval is formed between a first program operation and a second program operation. The control logic circuit includes a reprogram controller configured to control the row decoder so that a program interval differs in the memory cells connected to different string selection lines among the memory cells connected to a first wordline.
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公开(公告)号:US10586809B2
公开(公告)日:2020-03-10
申请号:US16211496
申请日:2018-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju-Hyun Kang , Hyun Lee , Min-Su Kim , Ji-Kyum Kim , Jong-Woo Kim
IPC: H01L27/118 , G06F17/50
Abstract: An integrated circuit includes a complex logic cell. The complex logic cell includes a first logic circuit providing a first output signal from a first input signal group and a common input signal group, and a second logic circuit providing a second output signal from a second input signal group and the common input signal group. The first and second logic circuits respectively include first and second transistors formed from a gate electrode, the gate electrode extending in a first direction and receiving a first common input signal of the common input signal group.
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