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公开(公告)号:US11184538B2
公开(公告)日:2021-11-23
申请号:US16969309
申请日:2019-02-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changwoo Lee , Dohan Kim , Kwanho Kim , Jaeho Kim , Jinmin Bang , Hajoong Park
Abstract: Disclosed is an electronic device for selectively generating video using image data acquired at a frame rate changed according to the distance between a subject and a reference region; and an operation method. The electronic device includes a camera, memory, display and processor, which may be configured to acquire, at a first frame rate, a plurality of first images including an object of interest, identify the distance between a reference region, by using at least some first images of the plurality of first images; obtain, at a second frame rate higher than the first frame rate, a plurality of second images including the object of interest, based on the distance satisfying a first designated condition; identify whether the position of the object of interest at least temporarily belongs to the reference region, and generate video corresponding to the second frame rate for the object of interest.
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公开(公告)号:US12135994B2
公开(公告)日:2024-11-05
申请号:US17561213
申请日:2021-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kiljae Kim , Byungsoo Kwon , Jaeho Kim , Daehyun Cho
IPC: G06F9/50 , G06F9/4401
Abstract: An electronic device includes at least one processor including a first processor and a second processor separate from the first processor, a memory electrically connected to the at least one processor and storing instructions, wherein the at least one processor is further configure to execute the instructions to assign foreground tasks to a boosting foreground control group and a non-boosting foreground control group in response to a user input, based on completion of booting of the electronic device, schedule at least one task assigned to the boosting foreground control group for the first processor, and schedule at least one task assigned to the non-boosting foreground control group for the second processor, and performance of the second processor may be lower than performance of the first processor.
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公开(公告)号:US20240295490A1
公开(公告)日:2024-09-05
申请号:US18237589
申请日:2023-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho Kim , Younghoon Sohn , Sunhong Jun
IPC: G01N21/25 , G01N21/956
CPC classification number: G01N21/255 , G01N21/956 , G01N2201/06113 , G01N2201/0683
Abstract: A measurement apparatus includes a light source assembly configured to emit light to a sample, a measuring device configured to measure reflected light, and a stage on which the sample is provided, where the light source assembly includes a first plate, a plurality of light sources connected to the first plate and a blocking panel comprising a hole, and one of the plurality of light sources is aligned with the hole in a first direction.
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公开(公告)号:US11941435B2
公开(公告)日:2024-03-26
申请号:US17168463
申请日:2021-02-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kiljae Kim , Byungsoo Kwon , Younghun Kim , Jaeho Kim , Hyunchul Seok , Daehyun Cho , Wonseo Choi
IPC: G06F9/48
CPC classification number: G06F9/4881
Abstract: Disclosed is an electronic device including at least one processor, and a memory operatively coupled to the at least one processor. The memory stores instructions configured to enable the at least one processor to identify, in response to running of an application, a plurality of tasks related to a running operation of the application, allocate virtual runtimes to the plurality of tasks when scheduling, adjust the virtual runtime of at least one task to be run with priority among the plurality of tasks to be a minimum value, arrange the at least one task with the adjusted virtual runtime, and run the at least one task with priority according to an arrangement order.
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公开(公告)号:US11222918B1
公开(公告)日:2022-01-11
申请号:US17320873
申请日:2021-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sungchul Kim , Jaeho Kim , Uihui Kwon , Seoksan Kim , Minwoong Seo
IPC: H01L27/146 , H04N5/359
Abstract: An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.
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公开(公告)号:US11082612B2
公开(公告)日:2021-08-03
申请号:US16763261
申请日:2018-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho Kim , Jinmin Bang , Dohan Kim , Changwoo Lee , Kwanho Kim , Jonghoon Won , Kihuk Lee
Abstract: An electronic device according to various embodiments of the present invention comprises a processor and an image sensor module electrically connected to the processor, wherein: the image sensor module comprises an image sensor and a control circuit, which is electrically connected to the image sensor and is connected to the processor by an interface; the control circuit is set so as not to compress at least one image acquired from the image sensor according to a first readout speed, but to transmit the same to the processor, and to compress at least one image acquired from the image sensor according to a second readout speed that is faster than the first readout speed and to transmit the same to the processor; and the processor can be set so as to acquire a first image set by using the image sensor according to a predetermined readout speed, compare at least two images included in the first image set, set, as either the first readout speed or the second readout speed, the readout speed corresponding to the image sensor on the basis of the result of the comparison of the at least two images included in the first image set, and acquire a second image set according to either the set first readout speed or second readout speed, by using the image sensor. Additional various embodiments are possible.
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公开(公告)号:US10347684B2
公开(公告)日:2019-07-09
申请号:US15848733
申请日:2017-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Honglae Park , Jaeho Kim , Hyoshin Ahn , Inkook Jang
IPC: H01L31/18 , H01L27/146 , H01L31/0248 , H04N5/361
Abstract: An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.
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公开(公告)号:US09324563B2
公开(公告)日:2016-04-26
申请号:US14299252
申请日:2014-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoungmi Kim , Joo-Hyung Yang , Jaeho Kim , Jungsik Choi
IPC: G03F7/20 , H01L21/033 , H01L21/308 , H01L21/311 , H01L21/768 , H01L27/108 , H01L27/115
CPC classification number: H01L21/0337 , G03F7/20 , G03F7/203 , G03F7/40 , G03F7/70466 , H01L21/0338 , H01L21/3086 , H01L21/31144 , H01L21/76816 , H01L27/10891 , H01L27/11582
Abstract: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.
Abstract translation: 提供了形成图案的方法。 所述方法可以包括在衬底上顺序形成蚀刻目标层和光致抗蚀剂层,将光致抗蚀剂层的两个第一部分暴露于光以将两个第一部分转变成两个第一光致抗蚀剂图案,并将光致抗蚀剂层的第二部分暴露于 光以将第二部分变换成设置在两个第一光致抗蚀剂图案之间的第二光致抗蚀剂图案。 该方法还可以去除光致抗蚀剂层的部分,以使蚀刻目标层上的两个第一光致抗蚀剂图案和第二光致抗蚀剂图案露出。
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公开(公告)号:US20150227046A1
公开(公告)日:2015-08-13
申请号:US14620289
申请日:2015-02-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeong Ju Park , Kyoungmi Kim , Jaeho Kim , Jungsik Choi
IPC: G03F7/16 , G03F7/30 , H01L21/027
CPC classification number: G03F7/168 , G03F7/0002 , G03F7/0382 , G03F7/091 , G03F7/30 , G03F7/40 , H01L21/0276 , H01L21/0337
Abstract: The inventive concepts provide methods of forming a semiconductor device. The method includes forming a neutral layer having a photosensitive property and a reflow property on an anti-reflective coating layer, performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern at least partially exposing the anti-reflective coating layer, heating the preliminary neutral pattern to form a neutral pattern, forming a block copolymer layer on the neutral pattern, and heating the block copolymer layer to form a block copolymer pattern. The block copolymer pattern includes a first pattern disposed on the anti-reflective coating layer exposed by the neutral pattern, and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern.
Abstract translation: 本发明构思提供了形成半导体器件的方法。 该方法包括在抗反射涂层上形成具有感光性能和回流性能的中性层,对中性层进行曝光处理和显影处理,以形成初步中性图案,至少部分地使抗反射涂层曝光 加热初步中性图案以形成中性图案,在中性图案上形成嵌段共聚物层,并加热嵌段共聚物层以形成嵌段共聚物图案。 嵌段共聚物图案包括设置在由中性图案暴露的抗反射涂层上的第一图案和设置在中性图案上并化学键合到第一图案的第二图案。
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公开(公告)号:US20150017807A1
公开(公告)日:2015-01-15
申请号:US14299252
申请日:2014-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoungmi KIM , Joo-Hyung Yang , Jaeho Kim , Jungsik Choi
IPC: H01L21/033
CPC classification number: H01L21/0337 , G03F7/20 , G03F7/203 , G03F7/40 , G03F7/70466 , H01L21/0338 , H01L21/3086 , H01L21/31144 , H01L21/76816 , H01L27/10891 , H01L27/11582
Abstract: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.
Abstract translation: 提供了形成图案的方法。 所述方法可以包括在衬底上顺序形成蚀刻目标层和光致抗蚀剂层,将光致抗蚀剂层的两个第一部分暴露于光以将两个第一部分转变成两个第一光致抗蚀剂图案,并将光致抗蚀剂层的第二部分暴露于 光以将第二部分变换成设置在两个第一光致抗蚀剂图案之间的第二光致抗蚀剂图案。 该方法还可以去除光致抗蚀剂层的部分,以使蚀刻目标层上的两个第一光致抗蚀剂图案和第二光致抗蚀剂图案露出。
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