公开(公告)号：US12185004B2

公开(公告)日：2024-12-31

申请号：US18046526

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjun Choi ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N25/75 ,  H04N25/766 ,  H04N25/772 ,  H10K39/32

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US11303835B2

公开(公告)日：2022-04-12

申请号：US16996264

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myunglae Chu ,  Sungyong Kim ,  Seoksan Kim ,  Minwoong Seo ,  Jaekyu Lee ,  Jongyeon Lee ,  Junan Lee

IPC: H04N5/3745 ,  H04N5/378

Abstract: Provided are a pixel array and an image sensor. The pixel array includes a plurality of pixels, which are arranged in a matrix form and which convert an optical signal into an electrical signal. The pixel array includes a first pixel arranged in a first row of the pixel array and a second pixel arranged in a second row of the pixel array, wherein each of the first pixel and the second pixel includes a first memory storing a digital reset value according to internal noise, the first memory of the first pixel stores m-bit data (where m is a natural number equal to or greater than 2), and the first memory of the second pixel stores n-bit data (where n is a natural number less than m).

公开(公告)号：US12028628B2

公开(公告)日：2024-07-02

申请号：US17744165

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyong Jung ,  Seoksan Kim ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/772

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/772

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：US11729531B2

公开(公告)日：2023-08-15

申请号：US17460902

申请日：2021-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoksan Kim ,  Minwoong Seo

IPC: H04N25/77 ,  H04N25/71 ,  H01L27/146 ,  H04N25/75

CPC classification number: H04N25/77 ,  H01L27/14609 ,  H04N25/745 ,  H04N25/75

Abstract: An image sensor includes a pixel including a photoelectric conversion device configured to convert sensed light into charges and a floating diffusion node configured to store charges provided from the photoelectric conversion device, a timing generator configured to generate a reset signal including, prior to a light-sensing period, a first reset signal pulse for enabling an erasing of charges stored in at least one of the photoelectric conversion device and the floating diffusion node, and generate a transfer signal including, subsequent to the light-sensing period, at least two transfer signal pulses, each transfer signal pulse enabling a moving of charges stored in the photoelectric conversion device to the floating diffusion node, and a readout circuit configured to generate output data by summing results of performing at least two samplings for the floating diffusion node based on the at least two transfer signal pulses.

公开(公告)号：US11756968B2

公开(公告)日：2023-09-12

申请号：US16882597

申请日：2020-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoksan Kim ,  Minwoong Seo ,  Myunglae Chu ,  Jong-Yeon Lee ,  Min-Jun Choi

IPC: H01L27/14 ,  H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14605 ,  H04N25/77

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：US20230122582A1

公开(公告)日：2023-04-20

申请号：US18046526

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun CHOI ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N5/378 ,  H01L27/30 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US20220086380A1

公开(公告)日：2022-03-17

申请号：US17460902

申请日：2021-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoksan Kim ,  Minwoong Seo

IPC: H04N5/3745 ,  H04N5/376 ,  H04N5/378

Abstract: An image sensor includes a pixel including a photoelectric conversion device configured to convert sensed light into charges and a floating diffusion node configured to store charges provided from the photoelectric conversion device, a timing generator configured to generate a reset signal including, prior to a light-sensing period, a first reset signal pulse for enabling an erasing of charges stored in at least one of the photoelectric conversion device and the floating diffusion node, and generate a transfer signal including, subsequent to the light-sensing period, at least two transfer signal pulses, each transfer signal pulse enabling a moving of charges stored in the photoelectric conversion device to the floating diffusion node, and a readout circuit configured to generate output data by summing results of performing at least two samplings for the floating diffusion node based on the at least two transfer signal pulses.

公开(公告)号：US11222918B1

公开(公告)日：2022-01-11

申请号：US17320873

申请日：2021-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungchul Kim ,  Jaeho Kim ,  Uihui Kwon ,  Seoksan Kim ,  Minwoong Seo

IPC: H01L27/146 ,  H04N5/359

Abstract: An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.