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    Pixel array and image sensor including the same
    1.
    发明授权
    Pixel array and image sensor including the same 有权

    公开(公告)号：US11303835B2

    公开(公告)日：2022-04-12

    申请号：US16996264

    申请日：2020-08-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myunglae Chu ,  Sungyong Kim ,  Seoksan Kim ,  Minwoong Seo ,  Jaekyu Lee ,  Jongyeon Lee ,  Junan Lee

    IPC: H04N5/3745 ,  H04N5/378

    Abstract: Provided are a pixel array and an image sensor. The pixel array includes a plurality of pixels, which are arranged in a matrix form and which convert an optical signal into an electrical signal. The pixel array includes a first pixel arranged in a first row of the pixel array and a second pixel arranged in a second row of the pixel array, wherein each of the first pixel and the second pixel includes a first memory storing a digital reset value according to internal noise, the first memory of the first pixel stores m-bit data (where m is a natural number equal to or greater than 2), and the first memory of the second pixel stores n-bit data (where n is a natural number less than m).

    Image sensor, operating method of the same, and pixel including plurality of photodiodes
    2.
    发明授权
    Image sensor, operating method of the same, and pixel including plurality of photodiodes 有权

    公开(公告)号：US12302021B2

    公开(公告)日：2025-05-13

    申请号：US18305909

    申请日：2023-04-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sanggwon Lee ,  Hyunyong Jung ,  Myunglae Chu ,  Minwoong Seo

    IPC: H04N25/77 ,  H04N25/57 ,  H04N25/59 ,  H04N25/703 ,  H04N25/75 ,  H04N25/78 ,  H10F39/18

    Abstract: An image sensor includes a first pixel outputting a first pixel signal, a second pixel outputting a second pixel signal, a ramp signal generator, and a comparator. The first pixel includes first transfer transistor, a first floating diffusion node, and a first gain control transistor. The second pixel includes a second transfer transistor and a second floating diffusion node. The comparator compares the first and second pixel signals. The first pixel operates in an HCG mode to output the first pixel signal as a first HCG pixel signal in a first period and operates in an LCG mode to output the second pixel signal as a first LCG pixel signal in a second period. A reset level of the second floating diffusion node of the second pixel is provided to the comparator through the column line in an interim reset period between the first period and the second period.

    CMOS image sensor and auto exposure method performed in units of pixels in the same
    4.
    发明授权
    CMOS image sensor and auto exposure method performed in units of pixels in the same 有权

    公开(公告)号：US11425320B2

    公开(公告)日：2022-08-23

    申请号：US16741234

    申请日：2020-01-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myunglae Chu ,  Minwoong Seo

    IPC: H04N5/355 ,  H04N5/3745 ,  H04N5/369

    Abstract: The complementary metal oxide (CMOS) image sensor CIS includes a plurality of pixels arranged in a two-dimensional (2D) array and each including a photodiode, a plurality of analog-to-digital converters (ADCs) configured to perform auto exposure in units of the pixels, and a readout circuit configured to read pixel signals of the pixels, in rows. The plurality of pixels and the plurality of ADCs are the same in number and are connected in a one-to-one correspondence to each other. Each of the plurality of ADCs performs AE on a corresponding one of the pixels.

    Image sensor
    5.
    发明授权
    Image sensor 有权

    公开(公告)号：US12185004B2

    公开(公告)日：2024-12-31

    申请号：US18046526

    申请日：2022-10-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Minjun Choi ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

    IPC: H04N25/75 ,  H04N25/766 ,  H04N25/772 ,  H10K39/32

    Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

    Image sensor
    6.
    发明授权
    Image sensor 有权

    公开(公告)号：US11924570B2

    公开(公告)日：2024-03-05

    申请号：US17482563

    申请日：2021-09-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyunyong Jung ,  Minwoong Seo ,  Myunglae Chu

    IPC: H04N25/771 ,  H04N25/53 ,  H04N25/75

    CPC classification number: H04N25/771 ,  H04N25/53 ,  H04N25/75

    Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

    Pixel array and image sensor
    8.
    发明授权
    Pixel array and image sensor 有权

    公开(公告)号：US11134213B2

    公开(公告)日：2021-09-28

    申请号：US16801288

    申请日：2020-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myunglae Chu ,  Minwoong Seo ,  Jungchak Ahn ,  Taeyon Lee

    IPC: H04N5/378 ,  H04N5/374 ,  H04N5/335 ,  H04N5/355

    Abstract: A pixel array includes a plurality of pixels. Each of the pixels includes a photoelectric element formed on a substrate and that generates charge from light, and a pixel circuit formed between the photoelectric element and the substrate and that outputs a digital signal value based on an amount of the generated charge. The pixel circuit includes a floating diffusion formed in the substrate and that stores the charge therein, a vertical pixel electrode that connects the floating diffusion to the photoelectric element and extends in a direction perpendicular to the substrate, an analog-to-digital converter that converts an electric potential of the floating diffusion into the digital signal value, and a memory element that stores the digital signal value.

    Image sensor device
    9.
    发明授权
    Image sensor device 有权

    公开(公告)号：US12302024B2

    公开(公告)日：2025-05-13

    申请号：US17535896

    申请日：2021-11-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Minwoong Seo ,  Myunglae Chu ,  Hyunyong Jung

    IPC: H04N25/779 ,  H04N25/772

    Abstract: An image sensor device includes a pixel array, including digital pixels, and a pixel driver including a high-speed scanner that generates reset enable signals and signal enable signals. Each of the digital pixels includes a photo detector, a comparator, and a memory circuit. The high-speed scanner includes a first flip-flop and a second flip-flop. The first flip-flop receives a clock signal and a read trigger signal and outputs a first reset enable signal of the reset enable signals. The second flip-flop receives the clock signal and the first reset enable signal and outputs a first signal enable signal of the signal enable signals. The pixel array outputs a reset sampling value stored in the memory circuit in response to the first reset enable signal and outputs a signal sampling value stored in the memory circuit in response to the first signal enable signal.

    Amplifier, analog-to-digital converter including the same, image sensing device, and signal processing method thereof
    10.
    发明授权
    Amplifier, analog-to-digital converter including the same, image sensing device, and signal processing method thereof 有权

    公开(公告)号：US12143740B2

    公开(公告)日：2024-11-12

    申请号：US17989764

    申请日：2022-11-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

    IPC: H04N25/75 ,  H03M1/12 ,  H04N25/671 ,  H04N25/77

    Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.

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