Image sensor
    1.
    发明授权

    公开(公告)号:US12185004B2

    公开(公告)日:2024-12-31

    申请号:US18046526

    申请日:2022-10-14

    Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

    Electronic device including electrostatic discharge path

    公开(公告)号:US12181936B2

    公开(公告)日:2024-12-31

    申请号:US17934484

    申请日:2022-09-22

    Abstract: An electronic device may include a display module, a connecting member including a bending portion connected to a display panel of the display module and extending toward a rear surface of the display module, and a protective layer formed of an insulating material to cover the bending portion, a printed circuit board disposed on a rear surface of the display module and connected to the display module by the connecting member, a frame disposed to surround at least a portion of the display module and formed of a conductive material, a side member including a first partition wall portion disposed between the frame and the display module to be spaced apart from the frame and a second partition wall portion disposed to be spaced apart from the display module and coveting at least a portion of an outer periphery of the display module.

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