公开(公告)号：US12250836B2

公开(公告)日：2025-03-11

申请号：US18595542

申请日：2024-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jun Kim ,  Jaehyeoung Ma ,  Geumjong Bae

IPC: H10D84/85 ,  H10D30/67 ,  H10D84/83 ,  H10D84/90

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

公开(公告)号：US20240413161A1

公开(公告)日：2024-12-12

申请号：US18414223

申请日：2024-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun Kim ,  Hyeonwoo Lee

IPC: H01L27/118

Abstract: A semiconductor device may include a substrate including an active pattern, a device isolation layer defining the active pattern, a channel pattern on the active pattern, a gate electrode on the channel pattern, and a first isolation pattern and a second isolation pattern penetrating the gate electrode. The first isolation pattern may be extended into the device isolation layer, and the second isolation pattern may be provided to penetrate the gate electrode and the device isolation layer and may be extended into an upper portion of the substrate. A level of a bottom surface of the second isolation pattern may be lower than a level of a bottom surface of the device isolation layer.

公开(公告)号：US20240213253A1

公开(公告)日：2024-06-27

申请号：US18595542

申请日：2024-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jun Kim ,  Jaehyeoung Ma ,  Geumjong Bae

IPC: H01L27/118 ,  H01L29/423

CPC classification number: H01L27/11807 ,  H01L29/42392 ,  H01L2027/11829

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

公开(公告)号：US11955516B2

公开(公告)日：2024-04-09

申请号：US18102204

申请日：2023-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun Kim ,  Woong Sik Nam ,  Mirco Cantoro

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L21/823481 ,  H01L29/4236 ,  H01L29/6656

Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

公开(公告)号：US10056454B2

公开(公告)日：2018-08-21

申请号：US15336111

申请日：2016-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun Kim ,  Jong-Ho Lee ,  Geum-Jong Bae ,  Dong-Chan Suh

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/8234 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0665 ,  H01L29/16 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first nano sheets which extend in the first direction parallel to an upper surface of the first fin. A second fin extends in the first direction. A second nano sheet structure includes at least two second nano sheets which extend in the first direction parallel to an upper surface of the second fin. At least one of the at least two first nano sheets has a different thickness from at least one of the at least two second nano sheets.

公开(公告)号：US09860659B2

公开(公告)日：2018-01-02

申请号：US14953974

申请日：2015-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Hee Won ,  Ho-Jun Kim ,  Kyung-Min Park ,  Gi-Hoon Lee ,  Sung-Bin Hong

IPC: H04R29/00 ,  H04R1/10 ,  H04R5/04

CPC classification number: H04R29/00 ,  H04R1/1033 ,  H04R1/1041 ,  H04R1/1091 ,  H04R5/04

Abstract: An electronic device comprising: a memory; a headphone jack; and at least one processor operatively coupled to the memory, configured to: detect an impedance of a first portion of the headphone jack; and detect whether a foreign substance is present in the headphone jack based on the impedance of the first portion of the headphone jack.

公开(公告)号：US09418799B2

公开(公告)日：2016-08-16

申请号：US14104229

申请日：2013-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jun Kim ,  Jung-Hoon Park

IPC: G06F3/041 ,  H01H13/66 ,  H01H13/702 ,  H01H3/02

CPC classification number: H01H13/66 ,  H01H13/702 ,  H01H2003/0293 ,  H01H2231/022 ,  H01H2239/006 ,  H01H2239/074

Abstract: An electronic device includes a substrate having a key sensor region and a touch sensor regions, a dome key unit, a key button, and a touch sensor. The dome key unit is arranged on the key sensor region of the substrate. The key button is arranged above the dome key unit in alignment with the dome key unit. The touch sensor is arranged on the touch sensor region of the substrate. The touch sensor is arranged such that it includes a region overlapping with a part of the key button. The key button can perform at least two functions associated with different input schemes at the same input point of the key button by means of the dome key unit and the touch sensor.

Abstract translation: 电子设备包括具有键传感器区域和触摸传感器区域的基板，圆顶键单元，按键按钮和触摸传感器。 圆顶键单元布置在基板的键传感器区域上。 键按钮配置在圆顶键单元的上方，与圆顶键单元对齐。 触摸传感器设置在基板的触摸传感器区域上。 触摸传感器被布置成使得其包括与键按钮的一部分重叠的区域。 键按钮可以通过穹顶键单元和触摸传感器在键按钮的相同输入点处执行与不同输入方案相关联的至少两个功能。