公开(公告)号：US11798850B2

公开(公告)日：2023-10-24

申请号：US17398623

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi Chan Jun ,  Chang Hwa Kim ,  Dae Won Ha

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L23/522 ,  H01L21/8238

CPC classification number: H01L21/823475 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L23/5226 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/823814 ,  H01L21/823878

Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

公开(公告)号：US11205683B2

公开(公告)日：2021-12-21

申请号：US16787429

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwan Sik Kim ,  Jin Hyung Kim ,  Chang Hwa Kim ,  Hong Ki Kim ,  Sang-Su Park ,  Beom Suk Lee ,  Jae Sung Hur

IPC: H01L33/00 ,  H01L21/00 ,  H01L27/30 ,  H01L51/44 ,  G02B1/18

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

公开(公告)号：US20190057907A1

公开(公告)日：2019-02-21

申请号：US16169326

申请日：2018-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HWI CHAN JUN ,  Chang Hwa Kim ,  Dae Won Ha

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L27/088

Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

公开(公告)号：US10204964B1

公开(公告)日：2019-02-12

申请号：US15870947

申请日：2018-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Ryan Lee ,  Jung Hun Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Sang Hoon Uhm ,  Beom Suk Lee ,  Tae Yon Lee ,  Dong Mo Im

IPC: H01L51/42 ,  H01L27/14 ,  H01L27/30 ,  H01L27/28 ,  H01L51/44 ,  H01L27/146

Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.