DISPLAY PANEL
    12.
    发明公开
    DISPLAY PANEL 审中-公开

    公开(公告)号:US20230157074A1

    公开(公告)日:2023-05-18

    申请号:US18096623

    申请日:2023-01-13

    CPC classification number: H10K59/1213 H10K59/126 H10K59/131 H01L27/1225

    Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

    Display panel and method of fabricating the same

    公开(公告)号:US11515376B2

    公开(公告)日:2022-11-29

    申请号:US17063698

    申请日:2020-10-05

    Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

    DISPLAY PANEL INCLUDING TWO SEMICONDUCTOR MATERIALS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220352274A1

    公开(公告)日:2022-11-03

    申请号:US17810705

    申请日:2022-07-05

    Abstract: A display panel includes a base layer, a first thin film transistor disposed on the base layer and including a silicon semiconductor pattern, a first control electrode is spaced apart from the silicon semiconductor pattern. A first input electrode is connected to a first side of the silicon semiconductor pattern. A first output electrode is connected to a second side of the silicon semiconductor pattern. The display panel includes a second thin film transistor. An organic light emitting diode includes a first electrode connected to the first thin film transistor, a second electrode, and an emission layer. A first insulating layer includes openings exposing the first side and the second side of the silicon semiconductor pattern, respectively. The first input electrode and the first output electrode are positioned in the openings respectively.

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