Scan driver and display device including the same

    公开(公告)号:US10991783B2

    公开(公告)日:2021-04-27

    申请号:US16573882

    申请日:2019-09-17

    Abstract: A scan driver includes a substrate, a first transistor on the substrate, the first transistor including a first active pattern and a first gate electrode, the first active pattern including first and second regions, and a first channel region between the first and second regions, a second transistor on the first transistor, the second transistor including a second active pattern and a second gate electrode, the second active pattern including third and fourth regions, and a second channel region between the third and fourth regions, first and second electrodes on the second transistor, the first electrode and the second electrode electrically connected to the first region and the second region, respectively, and third and fourth electrodes on the second transistor, the third electrode and the fourth electrode electrically connected to the third region and the fourth region, respectively, wherein the first and third electrodes are electrically connected.

    DISPLAY DEVICE
    12.
    发明申请

    公开(公告)号:US20210043139A1

    公开(公告)日:2021-02-11

    申请号:US16897646

    申请日:2020-06-10

    Abstract: A display device includes a first transistor including a first channel region, a first gate electrode overlapping the first channel region, and a first electrode connected to a node receiving a driving voltage, a second transistor electrically connected to the first electrode of the first transistor, the second transistor including a second channel region and a second gate electrode overlapping the first channel region and receiving a scan signal, a light emitting element electrically connected to a second electrode of the first transistor, a first conductive line overlapping the first gate electrode with the first channel region in between and receiving a variable voltage different from the driving voltage, and a second conductive line overlapping the second gate electrode with the second channel region in between and receiving the scan signal.

    Display device and method of manufacturing the same

    公开(公告)号:US10593770B2

    公开(公告)日:2020-03-17

    申请号:US15870095

    申请日:2018-01-12

    Abstract: A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.

    DISPLAY APPARATUS
    14.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240321200A1

    公开(公告)日:2024-09-26

    申请号:US18435922

    申请日:2024-02-07

    Abstract: A display apparatus for reducing a reduction in image quality due to signal interference between adjacent lines comprises a substrate, pixels comprising at least a first pixel group to a third pixel group, data lines comprising at least a first data line to a third data line, and a data distributor for alternately transferring data signals to at least one pair of data lines among the data lines, wherein one end of a first horizontal line of the first data line is arranged adjacent to blue-based pixels of the first pixel group, one end of a second horizontal line of the second data line is arranged adjacent to green-based pixels of the second pixel group, and one end of a third horizontal line of the third data line is arranged adjacent to blue-based pixels of the third pixel group.

    Thin film transistor substrate, display apparatus and method of manufacturing the same

    公开(公告)号:US11864423B2

    公开(公告)日:2024-01-02

    申请号:US17571895

    申请日:2022-01-10

    Abstract: A thin film transistor substrate includes: a substrate, a first electrode disposed on the substrate, a bank disposed on the substrate and having an inclined surface inclined at an angle with respect to the substrate, a second electrode disposed on the bank, an active pattern electrically connected to the first electrode and the second electrode, disposed on the inclined surface, and including a first conductive region and a second conductive region in which impurities are doped, and a channel region between the first conductive region and the second conductive region, and a gate electrode overlapping at least a portion of the channel region of the active pattern. The inclined surface extends in a first direction in a plan view. The first conductive region, the channel region, and the second conductive region are sequentially disposed on the inclined surface along a second direction that crosses the first direction.

    Display device
    16.
    发明授权

    公开(公告)号:US11423839B2

    公开(公告)日:2022-08-23

    申请号:US17264703

    申请日:2019-03-29

    Abstract: A display device may include a substrate, an organic light emitting element on the substrate, a pixel circuit between the substrate and the organic light emitting element, electrically connected to the organic light emitting element, and including a first transistor and a second transistor, a first metal layer between the substrate and the pixel circuit, overlapping the first transistor, and configured to receive a first voltage, and a second metal layer between the substrate and the pixel circuit, overlapping the second transistor, and configured to receive a second voltage different from the first voltage.

    Flexible display device
    17.
    发明授权

    公开(公告)号:US11075251B2

    公开(公告)日:2021-07-27

    申请号:US16299593

    申请日:2019-03-12

    Abstract: A flexible display device includes a protection member, a first adhesion member, a display member, a second adhesion member, and a window member. A thickness of the display member is less than a sum of thicknesses of the protection member and the window member. The display member includes a display panel layer, a touch sensing layer, and a reflection prevention layer integrated with each other to reduce a thickness of the flexible display device. The reduction in thickness enables the flexible display device to be bent with a relatively small radius of curvature, as well as to be repeatedly bent (or otherwise flexed) with reduced potential for delamination of the first and second adhesion members.

    Display apparatus including thin film transistor and method of manufacturing the same

    公开(公告)号:US10854644B2

    公开(公告)日:2020-12-01

    申请号:US16106161

    申请日:2018-08-21

    Abstract: A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region; and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.

    DISPLAY DEVICE INCLUDING A CMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190296095A1

    公开(公告)日:2019-09-26

    申请号:US16437857

    申请日:2019-06-11

    Abstract: A display device includes at least one transistor. The transistor has an active pattern including a first active area and a second active area. The first active area includes a first channel area and an n-doped area contacting the first channel area. The second active area includes a second channel area and a p-doped area contacting the second channel area. A first insulation layer covers at least a portion of the active pattern. A first gate electrode is disposed on the first insulation layer and at least partially overlaps the first channel area. A second gate electrode is disposed on the first insulation layer and at least partially overlaps the second channel area. A taper angle of the second gate electrode is larger than a taper angle of the first gate electrode.

    Display device and method of manufacturing the same

    公开(公告)号:US10403649B2

    公开(公告)日:2019-09-03

    申请号:US15869748

    申请日:2018-01-12

    Abstract: A display device includes a common active pattern, a first gate electrode, and a second gate electrode. The common active pattern includes an NMOS area, a PMOS area, and a silicide area in a same layer as the NMOS area and the PMOS area. The silicide area electrically connects the NMOS area to the PMOS area. The NMOS area includes a first channel area and an n-doped area contacting the first channel area. The PMOS area includes a second channel area and a p-doped area contacting the second channel area. The first gate electrode overlaps the first channel area, and the second gate electrode overlaps the second channel area.

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