公开(公告)号：US20160133348A1

公开(公告)日：2016-05-12

申请号：US14659730

申请日：2015-03-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Hyoung KANG ,  Sang Woo SOHN ,  Chang Oh JEONG ,  Gwang Min CHA

IPC: H01B1/02 ,  H01L33/44 ,  H01B5/02 ,  H01L33/62

CPC classification number: H01B1/026 ,  H01L27/3276

Abstract: Provided is a metal wire. The metal wire includes a copper layer, and at least one barrier layer. The barrier layer is disposed on at least one of an upper part and a lower part of the copper layer. The barrier layer includes an alloy including copper, nickel, and zinc.

Abstract translation: 提供金属线。 金属线包括铜层和至少一个阻挡层。 阻挡层设置在铜层的上部和下部中的至少一个上。 阻挡层包括包含铜，镍和锌的合金。

公开(公告)号：US20210036029A1

公开(公告)日：2021-02-04

申请号：US16876984

申请日：2020-05-18

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok PARK ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Hyung Jun KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362

Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

公开(公告)号：US20210020717A1

公开(公告)日：2021-01-21

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun KIM ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Yeon Keon MOON ,  Joon Seok PARK ,  Sang Woo SOHN ,  Sang Won SHIN ,  Jun Hyung LIM ,  Hye Lim CHOI

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

公开(公告)号：US20170179262A1

公开(公告)日：2017-06-22

申请号：US15446858

申请日：2017-03-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Dong Hee LEE ,  Gwang Min CHA ,  Sang Won SHIN ,  Sang Woo SOHN

IPC: H01L29/66 ,  H01L23/532 ,  H01L21/4763 ,  H01L27/12 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

公开(公告)号：US20160160340A1

公开(公告)日：2016-06-09

申请号：US14670403

申请日：2015-03-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Sang Woo SOHN ,  Sang Won SHIN ,  Dong Hee LEE ,  Chang Oh JEONG

IPC: C23C14/04

CPC classification number: C23C14/044 ,  H01J37/34 ,  H01J37/3447

Abstract: The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract translation: 使用溅射装置形成层的方法包括：将基板放置在室内; 使用溅射工艺将从面向衬底的靶发射的靶颗粒沉积在衬底上; 并且水平移动多个屏蔽杆，其安装在设置在基板和靶之间的屏蔽掩模中，并且在溅射过程期间沿着第一方向彼此分离。

公开(公告)号：US20240179964A1

公开(公告)日：2024-05-30

申请号：US18434812

申请日：2024-02-07

Applicant: Samsung Display Co., Ltd. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Sang Woo SOHN ,  Saeroonter OH ,  Joon Seok PARK ,  Young Joon CHOI ,  Su Hyun KIM ,  Jun Hyung LIM

IPC: H10K59/126 ,  G09G3/3225 ,  H10K59/131 ,  H10K71/00

CPC classification number: H10K59/126 ,  G09G3/3225 ,  H10K59/131 ,  H10K71/00

Abstract: A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

公开(公告)号：US20210327983A1

公开(公告)日：2021-10-21

申请号：US16952762

申请日：2020-11-19

Applicant: Samsung Display Co., LTD.

Inventor： Myoung Hwa KIM ,  Joon Seok PARK ,  Tae Sang KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Hye Lim CHOI

IPC: H01L27/32

Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.

公开(公告)号：US20210020872A1

公开(公告)日：2021-01-21

申请号：US16837540

申请日：2020-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Yeon Keon MOON ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Hyung Jun KIM ,  Geun Chul PARK ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: H01L51/56 ,  G09G3/3266 ,  G09G3/325 ,  H01L29/786 ,  H01L29/49 ,  G09G3/3291

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

公开(公告)号：US20190333435A1

公开(公告)日：2019-10-31

申请号：US16384821

申请日：2019-04-15

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Eok SHIN ,  Hong Sick PARK ,  Gyung Min BAEK ,  Sang Woo SOHN ,  Sang Won SHIN ,  Ju Hyun LEE

IPC: G09G3/20 ,  H01L51/52 ,  H01L27/32

Abstract: A display device may include a base and a first wiring layer disposed on the base. The first wiring layer may include a first material and a second material layer that overlap each other. A material of the second material layer may be different from a material of the first material layer. The second material layer contains MoOx, wherein 1.9≤x≤2.1.

公开(公告)号：US20190165083A1

公开(公告)日：2019-05-30

申请号：US16164796

申请日：2018-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Geol LEE ,  Kyeong Su KO ,  Sang Won SHIN ,  Dong Min LEE ,  Sang Gab KIM ,  Sang Woo SOHN ,  Hyun Eok SHIN ,  Shin Il CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.