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    Electronic device including nonmetallic light guide structure
    11.
    发明授权
    Electronic device including nonmetallic light guide structure 有权

    公开(公告)号：US11460893B2

    公开(公告)日：2022-10-04

    申请号：US17276534

    申请日：2019-09-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joonwon Chang ,  Jaehong Park ,  Seunghoon Lee

    IPC: G06F1/16 ,  F21V8/00

    Abstract: Disclosed in various embodiments of the present document are: a structure including a nonmetallic material and guiding, in one direction, light incident on one side; and an electronic device including the structure in an inner space thereof. According to the various embodiments, provided is an electronic device comprising: a housing having an inner space, and including an outer surface facing a first direction, an inner space facing the direction opposite to the first direction, and a display unit which is formed between the outer surface and the inner space and which has a thickness through which light passes through; a printed circuit board arranged in the inner space; at least one light-emitting element arranged in the inner space; and a nonmetallic structure arranged in the inner space, wherein the nonmetallic structure includes: a first part having a light guide between the light-emitting element and the display unit and including a transparent or translucent first material; a second part which is integrally formed with the first part, includes the first material, and is directly or indirectly fixed to the printed circuit board or the housing; and a third part encompassing at least a portion of the light guide and including a translucent second material. The nonmetallic light guide structure and the electronic device including same can be varied according to embodiments.

    SEMICONDUCTOR DEVICES HAVING IMAGE SENSOR AND MEMORY DEVICE OPERATION MODES
    16.
    发明申请
    SEMICONDUCTOR DEVICES HAVING IMAGE SENSOR AND MEMORY DEVICE OPERATION MODES 有权
    具有图像传感器和存储器件操作模式的半导体器件

    公开(公告)号：US20140104263A1

    公开(公告)日：2014-04-17

    申请号：US14050993

    申请日：2013-10-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunjung Kim ,  Wang Hyun Kim ,  Kwanghyun Lee ,  Seokyong Hong ,  Seunghoon Lee ,  JuHwan Jung

    IPC: G09G3/36

    CPC classification number: G09G3/3696 ,  G09G3/02 ,  G09G3/2092 ,  G09G5/39 ,  G09G2360/142 ,  G11C11/403 ,  G11C11/4076 ,  G11C2211/4016

    Abstract: A semiconductor device may include a plurality of banks; and a control unit configured to receive a command from an external device and independently control the plurality of banks according to the received command. Each bank comprises a pixel array including a plurality of pixels; a row decoder configured to activate word lines connected to the plurality of pixels under control of the control unit; a column decoder configured to activate bit lines connected to the plurality of pixels under control of the control unit; a sense amplifier and write driver configured to control and detect respective voltages of the activated bit lines to provide respective amplified voltages; and an input/output buffer configured to output data states of the pixels based on the respective amplified voltages. Related methods of operation are also discussed.

    Abstract translation: 半导体器件可以包括多个堤; 以及控制单元，被配置为从外部设备接收命令，并根据所接收的命令独立地控制所述多个存储体。 每个存储体包括包括多个像素的像素阵列; 行解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的字线; 列解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的位线; 读出放大器和写入驱动器，被配置为控制和检测激活的位线的相应电压以提供相应的放大电压; 以及输入/输出缓冲器，被配置为基于相应的放大电压输出像素的数据状态。 还讨论了相关的操作方法。

    VOLTAGE REGULATORS
    17.
    发明申请
    VOLTAGE REGULATORS 有权

    公开(公告)号：US20250155911A1

    公开(公告)日：2025-05-15

    申请号：US18756948

    申请日：2024-06-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chaekang Lim ,  Youngwoo Park ,  Seungjin Park ,  Jindo Byun ,  Seunghoon Lee ,  Youngdon Choi

    IPC: G05F1/575

    Abstract: A voltage regulator includes a pass transistor generating an output voltage in response to a gate voltage, and an error amplifier circuit outputting the gate voltage. The error amplifier circuit includes a first input terminal receiving a first reference voltage level from a reference voltage generator, a second input terminal receiving a second reference voltage level from the reference voltage generator, a third input terminal receiving a first voltage level of a first end of a target circuit, a fourth input terminal receiving a second voltage level of a second end of the target circuit, and an output terminal that outputs the gate voltage generated based on the first reference voltage level, the second reference voltage level, the first voltage level, and the second voltage level. A potential difference of the first voltage level and the second voltage level is an operating voltage of the target circuit.

    SYSTEM AND METHOD FOR ANTI-ROLLBACK
    20.
    发明申请
    SYSTEM AND METHOD FOR ANTI-ROLLBACK 审中-公开

    公开(公告)号：US20200151366A1

    公开(公告)日：2020-05-14

    申请号：US16521388

    申请日：2019-07-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Geng Chen ,  Jia Ma ,  Bulent Kasman ,  Na Yu ,  Xudong Jin ,  Jian Wang ,  Hyungseok Yu ,  Seunghoon Lee

    IPC: G06F21/72 ,  G06F1/14 ,  G06F21/57 ,  G06F21/64 ,  G06F21/78

    Abstract: A method for providing an anti-rollback secure timer service includes determining, at a device which includes a processor providing a trusted execution environment (TEE), a trusted memory, and a real time clock (RTC) accessible through an operating system of the device, an initial reference time value, by a secure timer application running in the TEE, the initial reference time value determined based on an initial value of the RTC obtained during booting of the device and a time delta value. The method further includes determining an updated reference time value based on the initial reference time value, a second value of the RTC, and a previously stored old reference time value, determining an updated time delta value based on the second value of the RTC and the updated reference time value, and storing the updated time delta value and the updated reference time value in the trusted memory.

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