公开(公告)号：US20250166677A1

公开(公告)日：2025-05-22

申请号：US18785979

申请日：2024-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jichull Jeong ,  Youngwoo Park ,  Seungjin Park ,  Jindo Byun ,  Seunghoon Lee ,  Eunsang Lee ,  Chaekang Lim

IPC: G11C7/14 ,  G11C7/06 ,  G11C7/10

Abstract: Disclosed is a memory device which includes a driver unit that includes a pull-up driver and a pull-down driver, a ZQ calibration unit that performs ZQ calibration with respect to the driver unit based on an external resistor and a first reference voltage and generates a first ZQ code corresponding to the first reference voltage, and a code conversion unit that generates a second ZQ code corresponding to a second reference voltage different from the first reference voltage, based on the first ZQ code.

公开(公告)号：US20250155911A1

公开(公告)日：2025-05-15

申请号：US18756948

申请日：2024-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaekang Lim ,  Youngwoo Park ,  Seungjin Park ,  Jindo Byun ,  Seunghoon Lee ,  Youngdon Choi

IPC: G05F1/575

Abstract: A voltage regulator includes a pass transistor generating an output voltage in response to a gate voltage, and an error amplifier circuit outputting the gate voltage. The error amplifier circuit includes a first input terminal receiving a first reference voltage level from a reference voltage generator, a second input terminal receiving a second reference voltage level from the reference voltage generator, a third input terminal receiving a first voltage level of a first end of a target circuit, a fourth input terminal receiving a second voltage level of a second end of the target circuit, and an output terminal that outputs the gate voltage generated based on the first reference voltage level, the second reference voltage level, the first voltage level, and the second voltage level. A potential difference of the first voltage level and the second voltage level is an operating voltage of the target circuit.