公开(公告)号：US11929239B2

公开(公告)日：2024-03-12

申请号：US17466184

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32174 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/31116 ,  H01L21/6833 ,  H01L21/68735 ,  H01J2237/334

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

公开(公告)号：US10892145B2

公开(公告)日：2021-01-12

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Kyohyeok Kim ,  Jongwoo Sun ,  Dougyong Sung ,  Sung-Ki Lee ,  Jaehyun Lee

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/027 ,  H01J37/32 ,  H01J37/22 ,  G01N21/94

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light.

公开(公告)号：US20230078095A1

公开(公告)日：2023-03-16

申请号：US17695062

申请日：2022-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Youngdo Kim ,  Byeongsang Kim ,  Yunhwan Kim ,  Jungmo Yang ,  Sejin Oh ,  Sungho Jang

IPC: H01J37/32

Abstract: A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.

公开(公告)号：US09691618B2

公开(公告)日：2017-06-27

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong Sung ,  Sejin Oh ,  Je-Hun Woo ,  Hyunju Lee ,  Seungkyu Lim ,  Kiho Hwang

IPC: H01L21/26 ,  H01L21/263 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.