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    Image sensor
    11.
    发明授权
    Image sensor 有权

    公开(公告)号：US12211880B2

    公开(公告)日：2025-01-28

    申请号：US18388882

    申请日：2023-11-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kook Tae Kim ,  Ju-Eun Kim ,  Miseon Park ,  Jaewoong Lee ,  Soojin Hong

    IPC: H01L27/146

    Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

    IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
    12.
    发明申请
    IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20230131769A1

    公开(公告)日：2023-04-27

    申请号：US17881862

    申请日：2022-08-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kook Tae Kim ,  Jingyun Kim ,  Jonghyeon Noh ,  Miseon Park ,  Jaewoong Lee

    IPC: H01L27/146

    Abstract: An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regioas of the phirality of pixel regions and penetrating the substrate, wherein the deep deice isolation pattern includes: a semiconductor pattern extended from the second surface toward the first surface; and sidewall insulating patterns interposed between the semiconductor pattern and the substrate, wherein the semiconductor pattern includes sidewall portions and a filling portion, wherein the sidewall portions are provided adjacent to the sidewall insulating patterns, respectively, wherein the filling portion is provided between the sidewall portions, and wherein top surfaces of the sidewall portions are located at a height higher than a top surface of the filling portion,

    Substrate processing apparatus and method of cleaning the same
    13.
    发明授权
    Substrate processing apparatus and method of cleaning the same 有权

    公开(公告)号：US10822694B2

    公开(公告)日：2020-11-03

    申请号：US16104311

    申请日：2018-08-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

    IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455

    Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

    Image sensor including reflective structure including a reflective structure
    14.
    发明授权
    Image sensor including reflective structure including a reflective structure 有权

    公开(公告)号：US12302661B2

    公开(公告)日：2025-05-13

    申请号：US17980192

    申请日：2022-11-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

    IPC: H01L27/146 ,  H10F39/00

    Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

    IMAGE SENSOR INCLUDING REFLECTIVE STRUCTURE INCLUDING A REFLECTIVE STRUCTURE
    16.
    发明公开
    IMAGE SENSOR INCLUDING REFLECTIVE STRUCTURE INCLUDING A REFLECTIVE STRUCTURE 审中-公开

    公开(公告)号：US20230170373A1

    公开(公告)日：2023-06-01

    申请号：US17980192

    申请日：2022-11-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14621 ,  H01L27/14629

    Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

    IMAGE SENSOR
    18.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200227449A1

    公开(公告)日：2020-07-16

    申请号：US16535762

    申请日：2019-08-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kook Tae Kim ,  Jingyun Kim ,  Kyunghee Kim ,  Jaewoong Lee ,  Soojin Hong

    IPC: H01L27/146

    Abstract: An image includes a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion region and a second photoelectric conversion region provided in the semiconductor substrate; a gapfill pattern that is interposed between the first and second photoelectric conversion regions and extends from the second surface toward the first surface, wherein a first side surface of the gapfill pattern faces the first photoelectric conversion region and a second side surface of the gapfill pattern faces the second photoelectric conversion region; and a conductive pattern disposed on the gapfill pattern. The conductive pattern includes a first portion disposed on the first side surface, a second portion disposed on the second side surface, and a connecting portion that is disposed on a top surface of the gapfill pattern and electrically connects the first portion to the second portion.

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