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    Wafer cleaning solution for cobalt electroless application
    12.
    发明申请
    Wafer cleaning solution for cobalt electroless application 有权
    用于钴无电镀的晶圆清洗液

    公开(公告)号：US20060174912A1

    公开(公告)日：2006-08-10

    申请号：US11053501

    申请日：2005-02-08

    申请人： Ramin Emami ,  Timothy Weidman ,  Sergey Lopatin ,  Hongbin Fang ,  Arulkumar Shanmugasundram

    发明人： Ramin Emami ,  Timothy Weidman ,  Sergey Lopatin ,  Hongbin Fang ,  Arulkumar Shanmugasundram

    IPC分类号： B08B6/00 ,  H01L21/4763 ,  C25F1/00

    CPC分类号： C23C18/1844 ,  C11D7/06 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23F1/18 ,  C23G1/103 ,  H01L21/02074 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883

    摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.

    摘要翻译： 公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。 清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。 在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。 该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上 沉积

    Vibration damping in chemical mechanical polishing system
    13.
    发明申请
    Vibration damping in chemical mechanical polishing system 失效
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US20060148387A1

    公开(公告)日：2006-07-06

    申请号：US11333992

    申请日：2006-01-17

    申请人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

    发明人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

    IPC分类号： B24B29/00

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Vibration damping in a chemical mechanical polishing system
    14.
    发明授权
    Vibration damping in a chemical mechanical polishing system 有权
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US07014545B2

    公开(公告)日：2006-03-21

    申请号：US10754997

    申请日：2004-01-10

    申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    IPC分类号： B24B7/00

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Electroless palladium nitrate activation prior to cobalt-alloy deposition
    16.
    发明申请
    Electroless palladium nitrate activation prior to cobalt-alloy deposition 审中-公开
    在钴合金沉积之前的无电解硝酸钯活化

    公开(公告)号：US20050170650A1

    公开(公告)日：2005-08-04

    申请号：US10970354

    申请日：2004-10-21

    申请人： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Fang Mei

    发明人： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Fang Mei

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02074 ,  C23C18/1893 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

    摘要： In one embodiment, a method for activating a metal layer prior to depositing a cobalt-containing capping layer is provided which includes exposing the metal layer to an electroless activation solution to deposit a palladium layer on the metal layer and depositing the cobalt-containing capping layer on the palladium layer. The electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, nitric acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water. In another embodiment, the electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, methanesulfonic acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water.

    摘要翻译： 在一个实施方案中，提供了在沉积含钴覆盖层之前激活金属层的方法，其包括将金属层暴露于无电解活化溶液以在钯金属层上沉积钯层并沉积含钴覆盖层 在钯层上。 无电解激活溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的硝酸和水。 在另一个实施方案中，无电解活化溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的甲磺酸和水。

    Pretreatment for electroless deposition
    17.
    发明申请
    Pretreatment for electroless deposition 有权
    化学沉积预处理

    公开(公告)号：US20050164497A1

    公开(公告)日：2005-07-28

    申请号：US10934850

    申请日：2004-09-03

    申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Ramin Emami ,  Hongbin Fang

    发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Ramin Emami ,  Hongbin Fang

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

    CPC分类号： H01L21/02074 ,  H01L21/288 ,  H01L21/67161 ,  H01L21/6723 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

    摘要： Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber comprises heating the substrate in a vacuum environment while providing a gas, such as a noble gas, a reducing gas such as hydrogen gas, a non-reducing gas such as nitrogen gas, or combinations thereof. In another embodiment, annealing in a plasma chamber comprises annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, or combinations thereof.

    摘要翻译： 本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。 在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供诸如惰性气体的气体，诸如氢气的还原气体，诸如氮气的非还原性气体，或其组合 。 在另一个实施例中，等离子体室中的退火包括在诸如来自氩气，氦气，氢气或其组合的等离子体的等离子体中退火衬底。

    Vibration damping in a chemical mechanical polishing system
    18.
    发明授权
    Vibration damping in a chemical mechanical polishing system 有权
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US06676497B1

    公开(公告)日：2004-01-13

    申请号：US09658417

    申请日：2000-09-08

    申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    IPC分类号： B24B700

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Wafer edge scrubber and method
    19.
    发明授权
    Wafer edge scrubber and method 失效
    晶圆边洗涤器和方法

    公开(公告)号：US06299698B1

    公开(公告)日：2001-10-09

    申请号：US09113447

    申请日：1998-07-10

    申请人： Ramin Emami ,  Brian J. Brown

    发明人： Ramin Emami ,  Brian J. Brown

    IPC分类号： B08B104

    CPC分类号： H01L21/67028 ,  B08B1/04 ,  G11B23/505

    摘要： An inventive brush and scrubbing device is provided for simultaneously scrubbing both planar and profiled (e.g., edge) surfaces of a thin disk such as a semiconductor wafer. The inventive brush has a contact surface having two portions, a planar portion for contacting a planar surface of a wafer, and a profiled portion for contacting an edge surface of a wafer. The profile of the profiled portion preferably follows the edge profile of a wafer to be cleaned by the brush. The profiled portion may have a higher modulus of elasticity than does the planar portion. Preferably the brushes are roller type PVA brushes having a plurality of nodules formed thereon.

    摘要翻译： 提供了一种创新的刷子和擦洗装置，用于同时擦洗诸如半导体晶片的薄盘的平面和成型（例如，边缘）表面。 本发明的刷具有具有两个部分的接触表面，用于接触晶片的平面的平面部分和用于接触晶片的边缘表​​面的成型部分。 成形部分的轮廓优选地遵循待刷清洁的晶片的边缘轮廓。 成型部分可以具有比平坦部分更高的弹性模量。 优选地，刷子是在其上形成有多个结节的辊式PVA刷。