公开(公告)号：US20240006487A1

公开(公告)日：2024-01-04

申请号：US18469799

申请日：2023-09-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kodai OZAWA ,  Sho NAKANISHI

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/861

CPC classification number: H01L29/0808 ,  H01L29/8611 ,  H01L29/7393

Abstract: The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and the semi-insulating film. The first electrode has the outer peripheral edge portion. The semi-insulating film is continuously formed from on the outer peripheral edge portion to on the second electrode. The outer peripheral edge portion includes the first corner portion. The second electrode has the second corner portion facing the first corner portion. The semi-insulating film on the insulating film is removed between the first corner and the second corner portion.

公开(公告)号：US20230275132A1

公开(公告)日：2023-08-31

申请号：US18062827

申请日：2022-12-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshiaki IGARASHI ,  Sho NAKANISHI ,  Tomoaki UNO ,  Koshiro YANAI ,  Masanari MURAYAMA

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/404 ,  H01L29/0623 ,  H01L29/7397 ,  H01L29/401 ,  H01L29/66348

Abstract: An insulating film is formed on a main surface of a semiconductor substrate constituting a semiconductor device so as to cover a field plate portion, a metal pattern thicker than the field plate portion is formed on the insulating film, and a protective film is formed on the insulating film so as to cover the metal pattern. The field plate portion is made of polycrystalline silicon, and the insulating film is composed of a stacked film of one or more silicon nitride films and one or more silicon oxide films.

公开(公告)号：US20190097002A1

公开(公告)日：2019-03-28

申请号：US16044956

申请日：2018-07-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Sho NAKANISHI

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739

Abstract: The reliability of resistive field plate part-containing semiconductor device is improved. In peripheral region of semiconductor chip, the outer circumference end of internal circulation wire is separated from outer circumference end of first conductor pattern of resistive field plate part toward element region. Inner circumference end of external circulation wire is separated from inner circumference end of second conductor pattern of resistive field plate part toward outer circumference of the chip. First conductor pattern of resistive field plate part is partially extended to over thin insulation film to form first lead-out part, and internal circulation wire and first lead-out part of first conductor pattern are electrically coupled via first coupling hole. Second conductor pattern of resistive field plate part is partially extended to over thin insulation film to form second lead-out part, external circulation wire and second lead-out part of second conductor pattern are electrically coupled via second coupling hole.