公开(公告)号：US20230275132A1

公开(公告)日：2023-08-31

申请号：US18062827

申请日：2022-12-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshiaki IGARASHI ,  Sho NAKANISHI ,  Tomoaki UNO ,  Koshiro YANAI ,  Masanari MURAYAMA

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/404 ,  H01L29/0623 ,  H01L29/7397 ,  H01L29/401 ,  H01L29/66348

Abstract: An insulating film is formed on a main surface of a semiconductor substrate constituting a semiconductor device so as to cover a field plate portion, a metal pattern thicker than the field plate portion is formed on the insulating film, and a protective film is formed on the insulating film so as to cover the metal pattern. The field plate portion is made of polycrystalline silicon, and the insulating film is composed of a stacked film of one or more silicon nitride films and one or more silicon oxide films.

公开(公告)号：US20160049466A1

公开(公告)日：2016-02-18

申请号：US14826075

申请日：2015-08-13

Applicant: Renesas Electronics Corporation

Inventor： Yuya ABIKO ,  Akio ICHIMURA ,  Toshiaki IGARASHI ,  Yasuhiro SHIRAI

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/04 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/045 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/7811 ,  H01L29/7827

Abstract: To improve characteristics of a semiconductor device (vertical power MOSFET). A spiral p-type column region having a corner is formed in a peripheral region surrounding a cell region in which a semiconductor element is formed. In an epitaxial layer of the peripheral region surrounding the cell region in which the semiconductor element is formed, a trench spirally surrounding the cell region and having the first and second side faces making up the corner is formed and the trench is filled with the epitaxial layer. By spirally arranging the p-type column region (n-type column region) in such a manner, a drop in a withstand voltage margin due to a hot spot can be avoided. In addition, the continuity of the p-type column region (n-type column region) is maintained. As a result, electric field concentration is alleviated step by step toward the outer periphery and the withstand voltage is therefore increased.

Abstract translation: 改善半导体器件（垂直功率MOSFET）的特性。 在围绕形成有半导体元件的单元区域的周边区域中形成具有角部的螺旋状p型列区域。 在围绕形成有半导体元件的单元区域的外围区域的外延层中，形成螺旋状包围单元区域并且具有构成拐角的第一和第二侧面的沟槽，并且沟槽被外延层填充 。 通过以这种方式螺旋地排列p型列区域（n型列区域），可以避免由于热点导致的耐受电压裕度的下降。 此外，保持p型列区域（n型列区域）的连续性。 结果，逐渐朝向外周逐渐减小电场浓度，耐压提高。