公开(公告)号：US20230275132A1

公开(公告)日：2023-08-31

申请号：US18062827

申请日：2022-12-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshiaki IGARASHI ,  Sho NAKANISHI ,  Tomoaki UNO ,  Koshiro YANAI ,  Masanari MURAYAMA

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/404 ,  H01L29/0623 ,  H01L29/7397 ,  H01L29/401 ,  H01L29/66348

Abstract: An insulating film is formed on a main surface of a semiconductor substrate constituting a semiconductor device so as to cover a field plate portion, a metal pattern thicker than the field plate portion is formed on the insulating film, and a protective film is formed on the insulating film so as to cover the metal pattern. The field plate portion is made of polycrystalline silicon, and the insulating film is composed of a stacked film of one or more silicon nitride films and one or more silicon oxide films.