公开(公告)号：US09948470B2

公开(公告)日：2018-04-17

申请号：US15011255

申请日：2016-01-29

Applicant: QUALCOMM Incorporated

Inventor： Xu Guo ,  David M. Jacobson ,  Yafei Yang ,  Adam J. Drew ,  Brian Marc Rosenberg

IPC: H04L9/32 ,  H04L29/06 ,  G06F7/58

CPC classification number: H04L9/3278 ,  G06F7/588 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/0876 ,  H04L63/0884

Abstract: An authentication device is provided that authenticates an electronic device based on the responses from distinct types of physically unclonable functions. The authentication device receives a device identifier associated with the electronic device. It then sends one or more challenges to the electronic device. In response, the authentication device receives one or more responses from the electronic device, the one or more responses including characteristic information generated from two or more distinct types of physically unclonable functions in the electronic device.

公开(公告)号：US09343135B2

公开(公告)日：2016-05-17

申请号：US14072537

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16 ,  G09C1/00 ,  H04L9/08 ,  H04L9/32

CPC classification number: G11C11/1695 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆功能的方法。 该方法包括将磁阻随机存取存储器（MRAM）单元的阵列初始化为第一逻辑状态，其中每个MRAM单元具有大于第一电压且小于第二电压的随机转变电压。 转换电压表示使MRAM单元从第一逻辑状态转换到第二逻辑状态的电压电平。 该方法还包括将编程信号电压施加到阵列的每个MRAM单元，以使阵列的MRAM单元的至少一部分随机地将状态从第一逻辑状态改变到第二逻辑状态，其中编程信号 电压大于第一电压且小于第二电压。

公开(公告)号：US20150074433A1

公开(公告)日：2015-03-12

申请号：US14072735

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G06F21/70 ,  G06F1/26

CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。

公开(公告)号：US20150058928A1

公开(公告)日：2015-02-26

申请号：US13975082

申请日：2013-08-23

Applicant: QUALCOMM Incorporated

Inventor： Xu Guo ,  David M. Jacobson ,  Yafei Yang ,  Adam J. Drew ,  Brian Marc Rosenberg

IPC: H04L29/06

CPC classification number: H04L9/3278 ,  G06F7/588 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/0876 ,  H04L63/0884

Abstract: One feature pertains to generating a unique identifier for an electronic device by combining static random access memory (SRAM) PUFs and circuit delay based PUFs (e.g., ring oscillator (RO) PUFs, arbiter PUFs, etc.). The circuit delay based PUFs may be used to conceal either a challenge to, and/or response from, the SRAM PUFs, thereby inhibiting an attacker from being able to clone a memory device's response.

Abstract translation: 一个特征涉及通过组合静态随机存取存储器（SRAM）PUF和基于电路延迟的PUF（例如，环形振荡器（RO）PUF，仲裁器PUF等））来为电子设备生成唯一的标识符。 基于电路延迟的PUF可以用于隐藏对SRAM PUF的挑战和/或响应，从而阻止攻击者克隆存储器设备的响应。