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公开(公告)号：US20180331149A1
公开(公告)日：2018-11-15
申请号：US16045557
申请日：2018-07-25
Inventor： Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H01L27/30
CPC classification number: H01L27/14665 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14616 , H01L27/1462 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/307
Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.
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公开(公告)号：US20180114811A1
公开(公告)日：2018-04-26
申请号：US15850645
申请日：2017-12-21
Inventor： Yoshihiro SATO , Ryohei MIYAGAWA , Tokuhiko TAMAKI , Junji HIRASE , Yoshiyuki OHMORI , Yoshiyuki MATSUNAGA
IPC: H01L27/146 , H04N5/378 , H04N5/363 , H01L21/266 , H01L21/8234
CPC classification number: H01L27/14643 , H01L21/266 , H01L21/823456 , H01L21/823481 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14665 , H01L27/14689 , H04N5/363 , H04N5/378
Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.
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公开(公告)号：US20150123180A1
公开(公告)日：2015-05-07
申请号：US14556093
申请日：2014-11-28
Inventor： Yoshihiro SATO , Ryohei MIYAGAWA , Tokuhiko TAMAKI , Junji HIRASE , Yoshiyuki OHMORI , Yoshiyuki MATSUNAGA
IPC: H01L27/146 , H01L21/266 , H01L21/8234
CPC classification number: H01L27/14643 , H01L21/266 , H01L21/823456 , H01L21/823481 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14665 , H01L27/14689 , H04N5/363 , H04N5/378
Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.
Abstract translation: 每个单位像素包括光电转换器，与半导体区域一起形成累积二极管的n型杂质区域，累积二极管累积由光电转换器产生的信号电荷;放大器晶体管，包括电连接到杂质区的栅电极 以及形成在放大晶体管周围并注入p型杂质的隔离区域。 放大器晶体管包括形成在栅极电极和隔离区域之间的n型源极/漏极区域和形成在栅电极下方的沟道区域。 在包括沟道区域的部分中，隔离区域中的间隙在栅极宽度方向上比在包括源极/漏极区域的部分处更宽。
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公开(公告)号：US20230097421A1
公开(公告)日：2023-03-30
申请号：US18061233
申请日：2022-12-02
Inventor： Yoshihiro SATO , Satoshi SHIBATA , Ryota SAKAIDA
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US20220320161A1
公开(公告)日：2022-10-06
申请号：US17712873
申请日：2022-04-04
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.
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Patent Agency Ranking
16.发明申请公开(公告)号：US20190259793A1
公开(公告)日：2019-08-22
申请号：US16401974
申请日：2019-05-02
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.
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公开(公告)号：US20190244959A1
公开(公告)日：2019-08-08
申请号：US16384575
申请日：2019-04-15
Inventor： Yoshihiro SATO , Ryota SAKAIDA , Satoshi SHIBATA , Taiji NODA
IPC: H01L27/092 , H01L27/146
CPC classification number: H01L27/0922 , H01L27/14612 , H01L27/14621 , H01L27/14643
Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.
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公开(公告)号：US20180114812A1
公开(公告)日：2018-04-26
申请号：US15851238
申请日：2017-12-21
Inventor： Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14665 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14616 , H01L27/1462 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/307
Abstract: An imaging device including a unit pixel cell including a semiconductor substrate having a surface including a first area and a second area surrounded by the first area. The semiconductor substrate including a first region of a first conductivity type exposed to the surface in the first area, and a second region of a second conductivity type directly adjacent to the first region and exposed to the surface in the second area; a photoelectric converter; an amplifier; a contact plug connected to the second region; a first transistor including a first electrode; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When viewed in a direction perpendicular to the surface of the semiconductor substrate, a contact between the second region and the contact plug is located between the first electrode and the second electrode.
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公开(公告)号：US20180048839A1
公开(公告)日：2018-02-15
申请号：US15720668
申请日：2017-09-29
Inventor： Mitsuyoshi MORI , Hirohisa OHTSUKI , Yoshiyuki OHMORI , Yoshihiro SATO , Ryohei MIYAGAWA
IPC: H04N5/378 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/1464 , H01L27/14645 , H04N5/3745
Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.
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公开(公告)号：US20150137199A1
公开(公告)日：2015-05-21
申请号：US14572046
申请日：2014-12-16
Inventor： Mitsuyoshi MORI , Ryohei MIYAGAWA , Yoshiyuki OHMORI , Yoshihiro SATO , Yutaka HIROSE , Yusuke SAKATA , Toru OKINO
IPC: H01L27/146
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/307
Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.
Abstract translation: 根据本公开的固态成像装置包括：电荷存储区域，其在光电转换膜中存储通过光电转换获得的信号电荷; 放大晶体管，其放大存储在相应像素中的电荷存储区域中的信号电荷; 接触插塞，其电连接到电荷存储区域并且包含半导体材料; 以及设置在接触塞上方并包含半导体材料的线。 接触插塞和电荷存储区域电连接，并且放大晶体管的接触插塞和栅电极经由线电连接。
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