公开(公告)号：US20170275778A1

公开(公告)日：2017-09-28

申请号：US15429164

申请日：2017-02-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： ISAO TASHIRO ,  HIDENAO KATAOKA ,  YOSHIO OKAYAMA ,  NOBUYUKI YOKOYAMA ,  YOSHIFUMI TAKASU

IPC: C30B29/22 ,  C01F17/00

CPC classification number: C30B29/22 ,  C01F17/0025

Abstract: A RAMO4 substrate containing an RAMO4 base material part containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), the RAMO4 base material part having a beveled portion at an edge portion thereof.

公开(公告)号：US20170260648A1

公开(公告)日：2017-09-14

申请号：US15411792

申请日：2017-01-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIO OKAYAMA ,  MASAKI NOBUOKA

IPC: C30B19/12 ,  C30B19/06 ,  C30B29/40 ,  C30B19/02

CPC classification number: C30B19/12 ,  C30B19/02 ,  C30B19/062 ,  C30B29/403

Abstract: A method for producing a Group III nitride crystal includes: preparing a protective layer on a region except for an epitaxial growth surface of an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of a trivaient element selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of a trivalent element selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of a divalent element selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd); and forming a Group III nitride crystal on the epitaxial growth surface of the RAMO4 substrate by a flux method.

公开(公告)号：US20170239773A1

公开(公告)日：2017-08-24

申请号：US15424244

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIFUMI TAKASU ,  YOSHIO OKAYAMA ,  AKIHIKO ISHIBASHI ,  ISAO TASHIRO ,  AKIO UETA ,  MASAKI NOBUOKA ,  NAOYA RYOKI

IPC: B24B7/22 ,  C30B33/00 ,  C30B29/22

CPC classification number: B24B7/22 ,  C30B29/22 ,  C30B33/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.