公开(公告)号：US20170275778A1

公开(公告)日：2017-09-28

申请号：US15429164

申请日：2017-02-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： ISAO TASHIRO ,  HIDENAO KATAOKA ,  YOSHIO OKAYAMA ,  NOBUYUKI YOKOYAMA ,  YOSHIFUMI TAKASU

IPC: C30B29/22 ,  C01F17/00

CPC classification number: C30B29/22 ,  C01F17/0025

Abstract: A RAMO4 substrate containing an RAMO4 base material part containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), the RAMO4 base material part having a beveled portion at an edge portion thereof.

公开(公告)号：US20170278754A1

公开(公告)日：2017-09-28

申请号：US15428627

申请日：2017-02-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： ISAO TASHIRO ,  HIDENAO KATAOKA ,  YOSHIO OKAYAMA ,  NOBUYUKI YOKOYAMA ,  YOSHIFUMI TAKASU

IPC: H01L21/78 ,  C30B33/00 ,  H01L33/00 ,  C01F17/00 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC classification number: H01L21/0254 ,  C30B15/00 ,  C30B25/18 ,  C30B29/22 ,  C30B29/406 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/0242 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

Abstract: A method for producing a Group III nitride crystal, includes: preparing an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd) and having a notch on a side portion thereof; growing a Group III nitride crystal on the RAMO4 substrate; and cleaving the RAMO4 substrate from the notch.