公开(公告)号：US09385277B2

公开(公告)日：2016-07-05

申请号：US14550145

申请日：2014-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka ,  Shinji Yoshida ,  Hiroyuki Hagino

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/16 ,  H01L33/48 ,  B82Y20/00 ,  H01L33/64 ,  H01S5/022 ,  H01S5/024 ,  H01S5/20 ,  H01S5/343 ,  H01L33/14

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract translation: 半导体发光器件包括：氮化物半导体发光元件，其包括具有极性或半极性表面的氮化物半导体衬底和层叠在极性或半极性表面上的氮化物半导体多层膜; 以及安装该元件的安装部。 氮化物半导体多层膜包括电子阻挡层。 电子阻挡层具有比氮化物半导体衬底更小的晶格常数。 安装部分至少包括第一安装部分基部。 第一安装部分基座靠近氮化物半导体发光元件。 第一安装部分底座具有比氮化物半导体多层膜更低的热膨胀系数。 第一安装部分基底具有比氮化物半导体多层膜低的热导率。

公开(公告)号：US10514158B2

公开(公告)日：2019-12-24

申请号：US15926613

申请日：2018-03-20

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Masaharu Fukakusa ,  Hideo Yamaguchi ,  Hirotaka Ueno ,  Kazuhiko Yamanaka

IPC: F21V29/503 ,  F21V29/507 ,  F21V29/70 ,  H01S5/00 ,  F21V29/502 ,  F21V9/30 ,  F21K9/64 ,  F21V13/08 ,  F21K99/00

Abstract: A light source device includes: a holder that has a first surface and a second surface located higher than the first surface, and is an integral structure; a semiconductor light-emitting device on the first surface; an optical element unit that is disposed above the semiconductor light-emitting device, and has a reflective surface that inclines with respect to the first surface and reflects emitted light from the semiconductor light-emitting device; and a phosphor optical element that is disposed on the second surface and irradiated with reflected light from the optical element unit.

公开(公告)号：US10447005B2

公开(公告)日：2019-10-15

申请号：US15950846

申请日：2018-04-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuhiko Yamanaka ,  Kiyoshi Morimoto ,  Hideki Kasugai ,  Kazuyuki Matsumura ,  Hideo Yamaguchi ,  Nobuyasu Suzuki

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/022 ,  G02B19/00 ,  H01S5/02

Abstract: A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.

公开(公告)号：US10139053B2

公开(公告)日：2018-11-27

申请号：US14804162

申请日：2015-07-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nozomi Naka ,  Kazuhiko Yamanaka

IPC: F21K9/64 ,  F21K99/00 ,  G02B27/14 ,  F21V9/08 ,  F21V5/00 ,  G02B27/28 ,  G02B26/00 ,  H01S5/40 ,  G03B21/20 ,  H04N9/31 ,  H01S5/00 ,  H01S5/323

Abstract: A solid-state light source device is equipped with a semiconductor light emitting element and a wavelength conversion element. The semiconductor light emitting element has a first light emitter and a second light emitter. The wavelength conversion element has a first wavelength converter containing a first phosphor and has a second wavelength converter containing a second phosphor. The first wavelength converter and the second wavelength converter are disposed apart from each other. The first light emitter emits first excitation light, and the second light emitter emits second excitation light. The first phosphor converts the first excitation light into first-wavelength light, and the second phosphor converts the second excitation light into second-wavelength light.

公开(公告)号：US09869453B2

公开(公告)日：2018-01-16

申请号：US14800736

申请日：2015-07-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka

IPC: F21V13/04 ,  H01S5/40 ,  F21V5/04 ,  F21V9/16 ,  G03B21/20 ,  G02B19/00 ,  G02B27/09 ,  H01S5/00

CPC classification number: F21V13/04 ,  F21V5/04 ,  F21V9/30 ,  G02B19/0028 ,  G02B19/0057 ,  G02B27/0961 ,  G02B27/0983 ,  G03B21/2013 ,  G03B21/2033 ,  G03B21/2066 ,  G03B21/208 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4093

Abstract: Provided are a light source, a light source unit, and a light source module that have small sizes, high output, and high coupling efficiency with an optical system, and further, can efficiently dissipate heat generation sources to exhaust heat. In the light source unit of the present disclosure, the light source is a semiconductor laser array. This configuration can realize high output of the light source, and high output of the whole light source unit. The light source unit includes a lens that converts outgoing beams to parallel beams, and an optical element having a plurality of optical surfaces with different minute inclination angles with respect to a principal surface. The minute inclination angles of the plurality of optical surfaces that intersect with optical rays of the plurality of outgoing beams passing through a principal point of the lens are opposite to one another with respect to the principal surface.

公开(公告)号：US09551474B2

公开(公告)日：2017-01-24

申请号：US14645462

申请日：2015-03-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuaki Nagao ,  Seigo Shiraishi ,  Yoshihisa Nagasaki ,  Nobuyasu Suzuki ,  Kazuhiko Yamanaka ,  Kiyoshi Morimoto ,  Takahiro Hamada

IPC: F21S4/00 ,  F21V3/00 ,  F21V5/00 ,  F21V21/30 ,  F21V9/00 ,  F21S8/10 ,  F21V29/70 ,  F21V29/89 ,  H01S5/00 ,  H01L33/50 ,  H01L33/64 ,  F21V9/16 ,  F21Y101/00

CPC classification number: F21V9/00 ,  F21K9/61 ,  F21K9/64 ,  F21S41/14 ,  F21S41/16 ,  F21S45/47 ,  F21V9/30 ,  F21V29/70 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2115/30 ,  H01L33/50 ,  H01L33/507 ,  H01L33/644 ,  H01S5/005

Abstract: A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.

Abstract translation: 波长转换构件包括：导热层; 蓝宝石衬底，其具有与导热层的第二表面和与第三表面相对的第四表面直接接触的第三表面; 以及具有与第四表面直接接触的第五表面和与第五表面相对的第六表面的磷光体层，荧光体层包括磷光体。 导热层的第一表面区域和第二表面区域中的至少一个区域是荧光体层的第六表面的面积的至少2800倍。 第三表面的区域和蓝宝石衬底的第四表面的面积中的至少一个是荧光体层的第六表面的面积的至少两倍。

公开(公告)号：US09447933B2

公开(公告)日：2016-09-20

申请号：US14598030

申请日：2015-01-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshikazu Onishi ,  Kazuhiko Yamanaka ,  Takuma Katayama

IPC: F21K99/00 ,  H04B10/116 ,  B82Y20/00 ,  F21V13/02 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01S5/343 ,  H01S5/42 ,  H01S5/00

CPC classification number: F21K9/90 ,  B82Y20/00 ,  F21V13/02 ,  H01S5/0078 ,  H01S5/0216 ,  H01S5/0425 ,  H01S5/18369 ,  H01S5/34333 ,  H01S5/423 ,  H04B10/116

Abstract: A visible light communication system includes a light transmitter including a group III nitride semiconductor laser element and a wavelength converter provided to face a light exit surface of the nitride semiconductor laser element and containing a fluorescent material. The visible light communication system further includes a wavelength filter configured to remove light emitted from the fluorescent material and a light receiving element configured to receive light emitted from the group III nitride semiconductor laser element via the wavelength filter.

Abstract translation: 可见光通信系统包括：光发射机，其包括III族氮化物半导体激光元件和设置为面对氮化物半导体激光元件的光出射面并含有荧光材料的波长转换器。 可见光通信系统还包括：波长滤波器，被配置为去除从荧光材料发射的光;以及光接收元件，被配置为经由波长滤光器接收从III族氮化物半导体激光元件发射的光。