公开(公告)号：US09385277B2

公开(公告)日：2016-07-05

申请号：US14550145

申请日：2014-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka ,  Shinji Yoshida ,  Hiroyuki Hagino

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/16 ,  H01L33/48 ,  B82Y20/00 ,  H01L33/64 ,  H01S5/022 ,  H01S5/024 ,  H01S5/20 ,  H01S5/343 ,  H01L33/14

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract translation: 半导体发光器件包括：氮化物半导体发光元件，其包括具有极性或半极性表面的氮化物半导体衬底和层叠在极性或半极性表面上的氮化物半导体多层膜; 以及安装该元件的安装部。 氮化物半导体多层膜包括电子阻挡层。 电子阻挡层具有比氮化物半导体衬底更小的晶格常数。 安装部分至少包括第一安装部分基部。 第一安装部分基座靠近氮化物半导体发光元件。 第一安装部分底座具有比氮化物半导体多层膜更低的热膨胀系数。 第一安装部分基底具有比氮化物半导体多层膜低的热导率。

公开(公告)号：US09735314B2

公开(公告)日：2017-08-15

申请号：US15174525

申请日：2016-06-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Samonji ,  Kazuhiko Yamanaka ,  Shinji Yoshida ,  Hiroyuki Hagino

IPC: H01L27/15 ,  H01L33/12 ,  H01L33/32 ,  H01S5/024 ,  H01S5/20 ,  H01S5/343 ,  H01L33/14 ,  H01L33/16 ,  H01L33/48 ,  B82Y20/00 ,  H01L33/64 ,  H01L33/06 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/022

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

公开(公告)号：US09312659B2

公开(公告)日：2016-04-12

申请号：US14556195

申请日：2014-11-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shinji Yoshida ,  Atsunori Mochida ,  Takahiro Okaguchi

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S5/068 ,  B82Y20/00

CPC classification number: H01S5/0282 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/06825 ,  H01S5/3013 ,  H01S5/323 ,  H01S5/343 ,  H01S5/34333

Abstract: Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.

Abstract translation: 提供了一种高可靠性的氮化物半导体激光元件，其具有即使在激光操作中也不会剥离的坚固的端面保护膜。 氮化物半导体激光元件包括：包含III族氮化物半导体并具有发光端面的半导体多层结构; 以及包含电介质多层膜并覆盖半导体多层结构的发光端面的保护膜。 保护膜包括从发光端面按顺序依次布置的端面保护层和氧扩散抑制层。 端面保护层包括包含铝的氮化物的结晶膜。 氧扩散抑制层具有金属氧化物膜在氧化硅膜之间的结构。 金属氧化物膜通过激光结晶。