公开(公告)号：US20200066366A1

公开(公告)日：2020-02-27

申请号：US16150263

申请日：2018-10-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Siu-Tung Lam ,  Chih-Hung Chiu ,  Kun-Tsung Lo ,  Chao-Kai Zhang

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12

Abstract: A memory testing method and a memory testing system. The memory testing system includes a host system and a testing device. The host system includes a processor. The testing device is coupled to the host system and a rewritable non-volatile memory module. A first memory controlling circuit unit corresponding to a first type memory storage device in the testing device tests the rewritable non-volatile memory module to obtain first test information. A second memory controlling circuit unit corresponding to a second type memory storage device in the testing device tests the rewritable non-volatile memory module to obtain second test information according to the first test information. The processor determines that whether the rewritable non-volatile memory module is applicable to the second type memory storage device or not according to the first test information and the second test information.

公开(公告)号：US09563508B2

公开(公告)日：2017-02-07

申请号：US14693885

申请日：2015-04-23

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  An-Cheng Liu ,  Siu-Tung Lam

IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52 ,  G11C5/14 ,  G11C11/56 ,  G11C16/12 ,  G11C16/34 ,  G11C29/02 ,  G11C29/42 ,  G11C29/04

CPC classification number: G06F11/108 ,  G06F11/1072 ,  G11C5/148 ,  G11C11/5628 ,  G11C16/12 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: The present disclosure provides a memory management method for a rewritable non-volatile memory module. The rewritable non-volatile memory module includes physical programming units, each of which includes multiple bits. The memory management method includes: identifying a first physical programming unit by applying a predetermined read voltage, where the first physical programming unit is identified as in a fully-erased status; identifying a second and a third physical programming units which are programmed before the first physical programming unit; acquiring status data of the second and the third physical programming unit; computing a difference of the status data between the second and the third physical programming unit; if the difference is larger than a threshold, identifying the second physical programming unit as in a program failure status.

Abstract translation: 本公开提供了一种用于可重写非易失性存储器模块的存储器管理方法。 可重写非易失性存储器模块包括物理编程单元，每个物理编程单元包括多个位。 存储器管理方法包括：通过施加预定的读取电压来识别第一物理编程单元，其中第一物理编程单元被识别为完全擦除状态; 识别在第一物理编程单元之前编程的第二和第三物理编程单元; 获取第二和第三物理编程单元的状态数据; 计算第二和第三物理编程单元之间的状态数据的差异; 如果差异大于阈值，则在程序故障状态中识别第二物理编程单元。

公开(公告)号：US09465584B2

公开(公告)日：2016-10-11

申请号：US14203584

申请日：2014-03-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Siu-Tung Lam

IPC: G06F1/02 ,  G06F7/58

CPC classification number: G06F7/588

Abstract: A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents.

Abstract translation: 提供了一种产生随机数的方法，存储器存储装置和控制电路。 该方法包括：将数据写入多个存储单元; 根据第一读取电压重复读取至少一个存储器单元以获得多个感测电流; 并根据感​​测电流产生随机数。

公开(公告)号：US20150193204A1

公开(公告)日：2015-07-09

申请号：US14203584

申请日：2014-03-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Siu-Tung Lam

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents.

Abstract translation: 提供了一种产生随机数的方法，存储器存储装置和控制电路。 该方法包括：将数据写入到多个存储单元中; 根据第一读取电压重复读取至少一个存储器单元以获得多个感测电流; 并根据感​​测电流产生随机数。