公开(公告)号：US20210357145A1

公开(公告)日：2021-11-18

申请号：US16920446

申请日：2020-07-03

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei-Cheng Li ,  Yu-Chung Shen ,  Wei-Liang Huang ,  Chao-Kai Zhang

IPC: G06F3/06

Abstract: A data writing method for a rewritable non-volatile memory module is provided according to embodiments of the disclosure. The method includes: writing first-type data into a first physical unit at a first write speed; and writing second-type data into a second physical unit at a second write speed. The first-type data is different from the second-type data, and the first write speed is different from the second write speed.

公开(公告)号：US11139044B2

公开(公告)日：2021-10-05

申请号：US16150263

申请日：2018-10-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Siu-Tung Lam ,  Chih-Hung Chiu ,  Kun-Tsung Lo ,  Chao-Kai Zhang

IPC: G11C29/42 ,  G11C29/12 ,  G11C29/44

Abstract: A memory testing method and a memory testing system. The memory testing system includes a host system and a testing device. The host system includes a processor. The testing device is coupled to the host system and a rewritable non-volatile memory module. A first memory controlling circuit unit corresponding to a first type memory storage device in the testing device tests the rewritable non-volatile memory module to obtain first test information. A second memory controlling circuit unit corresponding to a second type memory storage device in the testing device tests the rewritable non-volatile memory module to obtain second test information according to the first test information. The processor determines that whether the rewritable non-volatile memory module is applicable to the second type memory storage device or not according to the first test information and the second test information.

公开(公告)号：US20200066366A1

公开(公告)日：2020-02-27

申请号：US16150263

申请日：2018-10-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Siu-Tung Lam ,  Chih-Hung Chiu ,  Kun-Tsung Lo ,  Chao-Kai Zhang

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12

Abstract: A memory testing method and a memory testing system. The memory testing system includes a host system and a testing device. The host system includes a processor. The testing device is coupled to the host system and a rewritable non-volatile memory module. A first memory controlling circuit unit corresponding to a first type memory storage device in the testing device tests the rewritable non-volatile memory module to obtain first test information. A second memory controlling circuit unit corresponding to a second type memory storage device in the testing device tests the rewritable non-volatile memory module to obtain second test information according to the first test information. The processor determines that whether the rewritable non-volatile memory module is applicable to the second type memory storage device or not according to the first test information and the second test information.