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公开(公告)号：US20210357145A1
公开(公告)日：2021-11-18
申请号：US16920446
申请日：2020-07-03
Applicant: PHISON ELECTRONICS CORP.
Inventor： Wei-Cheng Li , Yu-Chung Shen , Wei-Liang Huang , Chao-Kai Zhang
IPC: G06F3/06
Abstract: A data writing method for a rewritable non-volatile memory module is provided according to embodiments of the disclosure. The method includes: writing first-type data into a first physical unit at a first write speed; and writing second-type data into a second physical unit at a second write speed. The first-type data is different from the second-type data, and the first write speed is different from the second write speed.
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