公开(公告)号：US09756298B2

公开(公告)日：2017-09-05

申请号：US15266875

申请日：2016-09-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Jin Li ,  Yin Qian ,  Dyson H. Tai

IPC: H04N9/04 ,  H01L27/146 ,  G02B5/20 ,  H04N5/357 ,  H04N5/378

CPC classification number: H04N9/045 ,  G02B5/201 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H04N5/357 ,  H04N5/378

Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.

公开(公告)号：US09479745B2

公开(公告)日：2016-10-25

申请号：US14491039

申请日：2014-09-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Jin Li ,  Yin Qian ,  Dyson H. Tai

IPC: H04N9/04 ,  H01L27/146 ,  G02B5/20

CPC classification number: H04N9/045 ,  G02B5/201 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H04N5/357 ,  H04N5/378

Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.

Abstract translation: 滤色器阵列包括多个平铺的最小重复单元，每个最小重复单元包括M×N个单独滤波器组。 每个最小重复单元包括多个成像过滤器，包括具有至少第一，第二和第三光响应的单个过滤器和至少一个具有参考光响应的参考过滤器，其中参考过滤器位于成像过滤器之间，其中参考光响应 通过多个成像滤波器基本上发射未滤波的滤波器的入射到滤色器阵列上的串扰谱。 公开和要求保护其他实施例。

公开(公告)号：US09379159B2

公开(公告)日：2016-06-28

申请号：US14515307

申请日：2014-10-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后，在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

公开(公告)号：US09276029B1

公开(公告)日：2016-03-01

申请号：US14601016

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Chia-Ying Liu ,  Yin Qian ,  Jin Li

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

Abstract: A color image sensor includes a plurality of pixel cells arranged in a pixel array. A plurality of color filters is arranged in a color filter array disposed over the pixel array. Each color filter is aligned with a corresponding underlying pixel cell. An optical isolation grid is disposed over the color filter array such that incident light is directed through the optical isolation grid prior to be being directed through the color filter array to the pixel array. The optical isolation grid includes a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid. Each opening is aligned with a corresponding color filter such that each color filter is optically isolated by the optical isolation grid to receive incident light only through a corresponding aligned one of the plurality of openings.

Abstract translation: 彩色图像传感器包括以像素阵列排列的多个像素单元。 多个滤色器布置在设置在像素阵列上的滤色器阵列中。 每个滤色器与相应的底层像素单元对齐。 光学隔离栅格设置在滤色器阵列上方，使得入射光在被引导通过滤色器阵列到像素阵列之前被引导通过光隔离栅格。 光隔离栅格包括多个侧壁，其布置成在光隔离栅格中限定多个开口。 每个开口与相应的滤色器对准，使得每个滤色器通过光学隔离栅格光学隔离，以仅通过多个开口中的相应对准的一个开口接收入射光。

公开(公告)号：US10665626B2

公开(公告)日：2020-05-26

申请号：US15962943

申请日：2018-04-25

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Zhiqiang Lin ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.

公开(公告)号：US20180359431A1

公开(公告)日：2018-12-13

申请号：US15620757

申请日：2017-06-12

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Ping-Hsu Chen ,  Yin Qian ,  Eiichi Funatsu

IPC: H04N5/33 ,  H04N5/225 ,  H04N5/232

CPC classification number: H04N5/332 ,  H04N5/2254 ,  H04N5/2256 ,  H04N5/23245 ,  H04N9/045 ,  H04N9/04553

Abstract: An image sensor system, comprising a pixel array that includes at least a first type pixel and a second type pixel, wherein each first type pixel is configured to sense light of a first optical spectral range; and each second pixel is configured to sense light of a second optical spectral range; an optical filter located above the pixel array, said optical filter configured to pass a third optical spectral range and a fourth optical spectral range that is different from the third optical spectral range, wherein the fourth optical spectral range is less than the second optical spectral range; a light source that emits light in a fifth optical spectral range, wherein the fifth optical spectral range at least overlaps with the fourth optical spectral range; and a controller that controls the image sensor system to selectively operate in a first mode that uses said first optical spectral range, and a second mode that uses said second optical spectral range.

公开(公告)号：US09991309B1

公开(公告)日：2018-06-05

申请号：US15642177

申请日：2017-07-05

Applicant: OmniVision Technologies, Inc.

Inventor： Cunyu Yang ,  Cheng Zhao ,  Gang Chen ,  Dyson Tai ,  Chen-Wei Lu

IPC: H04N5/33 ,  H04N5/335 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H04N5/332 ,  H04N5/335 ,  H04N5/3745

Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; a near infrared (NIR) quantum efficiency (QE) enhancement structure comprising at least two NIR QE enhancement elements within a region of the photodiode, wherein the NIR QE enhancement structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve an optical sensitivity, including near-infrared light sensitivity, of the image sensor.

公开(公告)号：US09911773B2

公开(公告)日：2018-03-06

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

公开(公告)号：US20170317124A1

公开(公告)日：2017-11-02

申请号：US15430071

申请日：2017-02-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

公开(公告)号：US09748308B2

公开(公告)日：2017-08-29

申请号：US15166002

申请日：2016-05-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

IPC: H01L27/10 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.