公开(公告)号：US07059817B2

公开(公告)日：2006-06-13

申请号：US10307022

申请日：2002-11-27

Applicant: Manny Sieradzki ,  Nicholas R. White

Inventor： Manny Sieradzki ,  Nicholas R. White

IPC: B65G49/07

CPC classification number: H01L21/67745 ,  H01L21/67155 ,  H01L21/67778 ,  Y10S414/139

Abstract: A high-speed wafer-processing apparatus and method that employs a vacuum chamber having at least two wafer transport robots and a process station. The vacuum chamber interfaces with a number of single-wafer load locks that are loaded and unloaded one wafer at a time by a robot in atmosphere. Four load locks are sized to allow for a gentle vacuum cycling of each wafer without significant pumpdown delays. The robots in the vacuum chamber move wafers sequentially from one of the load locks to a process station for processing and then to another one of the load locks for unloading by the atmospheric robot.

公开(公告)号：US5822172A

公开(公告)日：1998-10-13

申请号：US779899

申请日：1997-01-07

Applicant: Nicholas R. White

Inventor： Nicholas R. White

IPC: H01J37/20 ,  C23C14/50 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/67109 ,  H01L21/67103 ,  H01L21/6831 ,  Y10T279/23

Abstract: A flat workpiece is placed in contact with a flat platen in a vacuum chamber, and is held by a uniformly-distributed force while a small mass flow of gas is introduced along a contour to form a uniform pressure region between the flat workpiece and the platen. Separation of the two surfaces due to aplanarity or surface roughness is less than the gas mean free path, and high rates of heat transfer are obtained uniformly over the area of the workpiece. A scavenging port, located outwardly of the gas introduction contour is differentially pumped to reduce the rate of gas leakage into the chamber. Preferably, pressure is provided by an electrostatic clamp (for non-insulating substrates) or other clamping arrangement which does not occlude the front surface of the workpiece. In the electrostatic clamp, the voltage activation sequence prevents workpiece vibration, while a clamping current sensor immediately detects degree of contact, e.g., due to debris on the platen, and initiates a suitable warning or control. High cooling rates, freedom from bowing or stress, and full utilization of front surface area are all achieved.

Abstract translation: 将平坦的工件放置成与真空室中的平台相接触，并且通过均匀分布的力保持，同时沿着轮廓引入小的质量流量的气体，以在平坦工件和压盘之间形成均匀的压力区域 。 由于平面或表面粗糙度而使两个表面的分离小于气体平均自由程，并且在工件的区域上均匀地获得高的传热速率。 位于气体引入轮廓外侧的扫气口被差异地泵送以减少气体泄漏到腔室中的速率。 优选地，通过静电夹具（对于非绝缘基板）或不阻塞工件的前表面的其它夹紧装置来提供压力。 在静电夹具中，电压启动顺序可防止工件振动，而钳位电流传感器即时检测接触程度，例如由于压板上的碎屑，并启动适当的警告或控制。 高冷却速度，免受弯曲或压力，并充分利用前表面面积。

公开(公告)号：US08035087B2

公开(公告)日：2011-10-11

申请号：US12584384

申请日：2009-09-04

Applicant: Nicholas R. White

Inventor： Nicholas R. White

IPC: H01J1/50 ,  H01J37/08 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/153 ,  H01J2237/152 ,  H01J2237/1534

Abstract: The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.

Abstract translation: 本发明是用于离子注入装置的电磁控制器组件，并且提供了可用于三个可识别的独立和不同功能的结构构造和方法：（i）调整任何类型的行进中携带的带电粒子的轨迹 离子束，其位于注入平面或工作表面，用于将带电离子放置到制备的工件（例如硅晶片或平板玻璃面板）中; （ii）同时改变和改变行进光束中离子的平行度; 和（iii）同时地，为了控制沿着行进离子束的横向的电流密度的均匀性，不管梁是高方位的，连续的带状离子束还是扫描的带状离子束。

公开(公告)号：US07462843B2

公开(公告)日：2008-12-09

申请号：US11209484

申请日：2005-08-22

Applicant: Jiong Chen ,  Nicholas R. White

Inventor： Jiong Chen ,  Nicholas R. White

IPC: G21K5/10

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057

Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

Abstract translation: 本发明公开了一种具有多种工作模式的离子注入装置。 它具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。 本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

公开(公告)号：US07057192B2

公开(公告)日：2006-06-06

申请号：US11049264

申请日：2005-02-02

Applicant: Robert E. Kaim ,  Nicholas R. White

Inventor： Robert E. Kaim ,  Nicholas R. White

IPC: H01J37/20

CPC classification number: H01L21/67069 ,  H01J37/3171 ,  H01J2237/20228

Abstract: Semiconductor wafers are sequentially mounted on a holder at one end of an arm which is pivoted about its other end. Each wafer is thereby passed on an arcuate path through a parallel-scanned or continuous ribbon-shaped beam for processing. The pivot axis is parallel to the centroid of the beam trajectories. By pre-orienting the wafers before loading, and by providing a second pivot between the arm and the holder, the angle between the beam and the wafer surface may be precisely adjusted to any arbitrary angle of interest. The geometry is such that this angle is constant over the processed area. Uniform processing requires a scanned ribbon beam to have a non-uniform scan velocity and a continuous ribbon beam to have a non-uniform intensity profile. The required non-uniformity is generated by a suitably shaped collimating magnet. When a suitable ribbon beam is unavailable, a beam of approximately circular shape may be used by translating the pivot axis, thereby moving the wafer in a two-dimensional pattern through the beam.

Abstract translation: 半导体晶片依次安装在臂的一端处的支架上，该支架围绕其另一端枢转。 因此，每个晶片通过平行扫描或连续的带状光束在弧形路径上通过以进行处理。 枢转轴线平行于梁轨迹的重心。 通过在装载之前预先定向晶片，并且通过在臂和保持器之间提供第二枢轴，梁和晶片表面之间的角度可精确地调节到任何任意的感兴趣的角度。 几何形状使得该角度在加工区域上是恒定的。 均匀处理需要扫描的带束具有不均匀的扫描速度和连续的带状束以具有不均匀的强度分布。 所需的不均匀性由合适形状的准直磁体产生。 当适当的带状束不可用时，可以通过平移枢转轴线来使用大致圆形的光束，从而以二维图案通过光束移动晶片。

公开(公告)号：US5834786A

公开(公告)日：1998-11-10

申请号：US761065

申请日：1996-12-05

Applicant: Nicholas R. White ,  Manny Sieradzki

Inventor： Nicholas R. White ,  Manny Sieradzki

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/055 ,  H01J2237/14

Abstract: A compact high current broad beam ion implanter employs a high current density source, a bending magnet to steer the beam and straighten trajectories, and a multipole unit extending across the beam path to tailor a precise one-dimensional beam current distribution which yields a uniform implantation dose with a possibly non-uniform workpiece transport assembly. In one embodiment, the multipole unit is a separate magnet assembly positioned adjacent to a output face of the bending magnet, and includes one or more ranks of closely-spaced pole elements, controlled so the drive current or position of each pole element is varied to affect a narrow band of the beam passing over that element. In another embodiment, the bending magnet is an analyzing magnet which directs a desired species through a resolving slit, and a second magnet deflects the resultant beam while rendering it parallel and further correcting it along its width dimension. As with the first embodiment, multipole elements are adjusted to fit the derived profile. Both magnets preferably have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. The multipole elements are adjacent to or incorporated in the dipoles, preferably at a downstream side, and operate to shift beam power along the width dimension, locally adjusting the beam current density to achieve the desired profile. A separate multipole array, such as an electromagnet with blade poles oriented at progressive angles may adjust the entrance beam.

Abstract translation: 紧凑型大电流宽光束离子注入机采用高电流密度源，弯曲磁铁来控制光束和拉直轨迹，以及跨过光束路径延伸的多极单元，以定制精确的一维光束电流分布，产生均匀的注入 剂量与可能不均匀的工件传输组件。 在一个实施例中，多极单元是与弯曲磁体的输出面相邻定位的单独的磁体组件，并且包括一个或多个紧密间隔的极元件等级，被控制使得每个磁极元件的驱动电流或位置变化为 影响通过该元件的光束的窄带。 在另一个实施例中，弯曲磁体是分析磁体，其通过分辨狭缝引导期望的物质，并且第二磁体使所得到的光束平行并使其沿其宽度尺寸进一步校正。 与第一实施例一样，调节多极元件以适合导出的轮廓。 两个磁体优选地具有相对较大的极间隙，宽的输入和输出面，并且通过小的曲率半径偏转以产生没有不稳定性的光束。 多极元件与偶极子相邻或并入其中，优选地在下游侧，并且用于沿着宽度尺寸移动光束功率，局部地调整光束电流密度以实现期望的分布。 单独的多极阵列，例如具有以渐进角度定向的叶片极的电磁体可以调节入射光束。

公开(公告)号：US5126575A

公开(公告)日：1992-06-30

申请号：US693784

申请日：1991-04-29

Applicant: Nicholas R. White

Inventor： Nicholas R. White

IPC: C23C14/48 ,  H01J3/24 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J2237/083

Abstract: A single aperture ion source is used to produce a ribbon shaped ion beam through which a targer may be transported. At an aperture of the ion source the ion beam converges in a vertical direction and diverges in a horizontal direction. The ion beam is passed through the poles of an analyzing magnet. A waist of the ion beam in the vertical direction occurs at the analyzing magnet. The analyzing magnet causes the ion beam to converge in the horizontal direction. Immediately before the ion beam strikes the target, the ion beam is passed through a focussing magnet which renders the ion beam trajectories substantially parallel. Between the ion source and the target, the ion beam may be passed through one or more resolving slits, as necessary, to trim the ion beam and assure that a focused, uniform beam reached the target. At the target, the analyzing magnet projects an inverted image of the aperture of the ion source. Further, a cross section of the ion beam is in the shape of a ribbon, the length of the ribbon being wider than the target. Using a conveyer the target is passed through the ion beam resulting in a uniform implantation of ions.

Abstract translation: 使用单个孔径离子源来生产带状离子束，通过该离子束可以传送调节器。 在离子源的孔径处，离子束在垂直方向上会聚并沿水平方向发散。 离子束通过分析磁体的磁极。 离子束在垂直方向上的腰围发生在分析磁铁上。 分析磁铁使离子束在水平方向上会聚。 在离子束撞击目标物体之前，离子束通过聚焦磁体，使得离子束轨迹基本上平行。 在离子源和靶之间，离子束可以根据需要通过一个或多个分解狭缝，以修整离子束，并确保聚焦的均匀光束到达靶。 在目标处，分析磁体投射离子源的孔的反转图像。 此外，离子束的横截面为带状，色带的长度比目标宽。 使用输送机，目标物通过离子束，导致离子的均匀注入。

公开(公告)号：US20170110282A1

公开(公告)日：2017-04-20

申请号：US14392407

申请日：2014-11-26

Applicant: Nicholas R. White

Inventor： Nicholas R. White

IPC: H01J27/14 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J27/14 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

Abstract: The invention is a unique and substantive improvement in ion source assemblies which is able to produce a ribbon-shaped ion beam having an arbitrarily chosen breadth dimension which is at least ten times greater [and often more than thirty times greater] than its thickness dimension, the breadth and thickness dimensions of the beam being normal (i.e., perpendicular) to the Z-axis direction of travel for the ion beam. In all its embodiments, the improved ion source will comprise not less than two discrete component parts: (i) A closed, solid wall, prism-shaped arc discharge chamber having limited width and depth dimensions, and which concurrently has an arbitrarily chosen and predetermined length dimension which can be as small as 80 millimeters and alternatively exceed 3,000 millimeters in size; and (ii) A primary electron trap assembly which comprises at least an adjacently located magnetic field generating yoke subassembly able to provide a discernible quadrupole magnetic field internally within a confined cavity volume existing within the measurable dimensions of the arc discharge chamber walls.

公开(公告)号：US08921802B2

公开(公告)日：2014-12-30

申请号：US13385618

申请日：2012-02-27

Applicant: Nicholas R. White

Inventor： Nicholas R. White

IPC: H01J3/20 ,  H01J37/14 ,  H01J3/22 ,  H01J3/24 ,  H01J37/05 ,  H01J37/317 ,  H01J49/06 ,  H01J49/20

CPC classification number: H01J3/22 ,  H01J3/24 ,  H01J37/05 ,  H01J37/14 ,  H01J37/3171 ,  H01J49/06 ,  H01J49/20 ,  H01J2237/055 ,  H01J2237/057

Abstract: The present invention is an apparatus and multi-unit assembly which is able to achieve two different and highly desirable functions: A focusing of a charged particle beam; and a mass separation of desired ion species from unwanted ion species in traveling ion beams. The apparatus is a simply organized and easily manufactured article; is relatively light-weight and less expensive to make; and is easier to install, align, and operate than conventionally available devices.

Abstract translation: 本发明是一种能够实现两种不同和非常理想的功能的装置和多单元组件：带电粒子束的聚焦; 并且将所需离子物质与不需要的离子物质在行进离子束中的质量分离。 该装置是简单有组织且容易制造的物品; 相对较轻，制造成本较低; 并且比常规可用设备更容易安装，对准和操作。

公开(公告)号：US20090189096A1

公开(公告)日：2009-07-30

申请号：US12194515

申请日：2008-08-19

Applicant: Jiong CHEN ,  Nicholas R. White

Inventor： Jiong CHEN ,  Nicholas R. White

IPC: H01J37/08 ,  G21K1/00

CPC classification number: H01J37/08 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/083 ,  H01J2237/1503 ,  H01J2237/201 ,  H01J2237/31701

Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

Abstract translation: 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线，其中第二路径包括并入能量过滤的减速或加速系统。 最后，公开了离子注入的方法，其中注入模式可以从目标的一维扫描切换到二维扫描。