公开(公告)号：US20250137920A1

公开(公告)日：2025-05-01

申请号：US18919048

申请日：2024-10-17

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Peter Paquet ,  Yingpin Wu ,  Fang-Jyun Yeh ,  Suryanarayanan Ganesan ,  Jordan Pio ,  Shankar Krishnan ,  Taher Kagalwala ,  Derrick A. Shaughnessy ,  Yan Zhang ,  Stilian Pandev ,  Min-Yeong Moon

IPC: G01N21/21 ,  G01N21/95

Abstract: A metrology system may include a spectroscopic metrology sub-system and a controller, the controller including one or more processors configured to execute program instructions configured to cause the one or more processors to: generate a tool-induced shift (TIS) model of a training sample by the metrology sub-system comprising: receiving training data from metrology measurements of the training sample, the training data comprising spectral data associated with at least one off-diagonal Mueller matrix element generated by one or more first measurements of the training sample at a first azimuthal angle and one or more second measurements of the training sample at a second azimuthal angle, deriving overlay spectra data and TIS spectra data from the training data, decomposing the overlay spectra data and the TIS spectra data, and inferring a TIS signature for the training sample; and to remove the TIS signature from a test sample.

公开(公告)号：US12181271B2

公开(公告)日：2024-12-31

申请号：US17674809

申请日：2022-02-17

Applicant: KLA CORPORATION

Inventor： Min-Yeong Moon ,  Stilian Pandev ,  Dimitry Sanko

IPC: G01B11/24 ,  G03F7/00 ,  G06N3/0464 ,  G06N3/09 ,  G06N5/022 ,  G06N20/00 ,  H01L21/66

Abstract: A metrology module includes an estimation model that is configured to provide an estimation of independent overlay with tool induced shift on received wafers based on only one azimuth angle spectra. The estimation model can use at least one machine learning algorithm. The estimation model can be derived by the machine learning algorithm applied to calculated training data based on a first training sample set from initial metrology measurements and an additional tool induced shift training sample.

公开(公告)号：US12148639B2

公开(公告)日：2024-11-19

申请号：US17959008

申请日：2022-10-03

Applicant: KLA Corporation

Inventor： Min-Yeong Moon ,  Phalguna Kumar Rachinayani ,  Jean-Christophe Perrin ,  Stilian Pandev

IPC: H01L21/67 ,  H01L21/66

Abstract: Methods and systems for determining information for a specimen are provided. One system includes an output acquisition subsystem configured to generate output for a specimen at one or more target locations on the specimen and one or more temperature sensors configured to measure one or more temperatures within the system. The system also includes a deep learning model configured for predicting error in at least one of the one or more target locations based on at least one of the one or more measured temperatures input to the deep learning model by the computer subsystem. The computer subsystem is configured for determining a corrected target location for the at least one of the one or more target locations by applying the predicted error to the at least one of the one or more target locations.

公开(公告)号：US11604420B2

公开(公告)日：2023-03-14

申请号：US17488010

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Stilian Pandev ,  Min-Yeong Moon ,  Andrei V. Shchegrov ,  Jonathan Madsen ,  Dimitry Sanko ,  Liran Yerushalmi ,  Alexander Kuznetsov ,  Mahendra Dubey

IPC: G03F7/20

Abstract: A self-calibrating overlay metrology system may receive device overlay data from device targets on a sample, determine preliminary device overlay measurements for the device targets including device-scale features using an overlay recipe with the device overlay data as inputs, receive assist overlay data from sets of assist targets on the sample including device-scale features, where a particular set of assist targets includes one or more target pairs formed with two overlay targets having programmed overlay offsets of a selected value with opposite signs along a particular measurement direction. The system may further determine self-calibrating assist overlay measurements for the sets of assist targets based on the assist overlay data, where the self-calibrating assist overlay measurements are linearly proportional to overlay on the sample, and generate corrected overlay measurements for the device targets by adjusting the preliminary device overlay measurements based on the self-calibrating assist overlay measurements.

公开(公告)号：US11604063B2

公开(公告)日：2023-03-14

申请号：US17473742

申请日：2021-09-13

Applicant: KLA Corporation

Inventor： Stilian Pandev ,  Min-Yeong Moon ,  Andrei V. Shchegrov ,  Jonathan Madsen ,  Dimitry Sanko ,  Liran Yerushalmi ,  Alexander Kuznetsov ,  Mahendra Dubey

IPC: G01B21/24

Abstract: An overlay metrology system may receive overlay data for in-die overlay targets within various fields on a skew training sample from one or more overlay metrology tools, wherein the in-die overlay targets within the fields have a range programmed overlay offsets, wherein the fields are fabricated with a range of programmed skew offsets. The system may further generate asymmetric target signals for the in-die overlay targets using an asymmetric function providing a value of zero when physical overlay is zero and a sign indicative of a direction of physical overlay. The system may further generate corrected overlay offsets for the in-die overlay targets on the asymmetric target signals, generate self-calibrated overlay offsets for the in-die overlay targets based on the programmed overlay offsets and the corrected overlay offsets, generate a trained overlay recipe, and generate overlay measurements for in-die overlay targets on additional samples using the trained overlay recipe.

公开(公告)号：US20220404143A1

公开(公告)日：2022-12-22

申请号：US17725339

申请日：2022-04-20

Applicant: KLA Corporation

Inventor： Stilian Ivanov Pandev ,  Min-Yeong Moon

IPC: G01B11/24 ,  G01B11/26

Abstract: Methods and systems for measurement of wafer tilt and overlay are described herein. In some embodiments, the measurements are based on the value of an asymmetry response metric and known wafer statistics. Spectral measurements are performed at two different azimuth angles, preferably separated by one hundred eighty degrees. A sub-range of wavelengths is selected with significant signal sensitivity to wafer tilt or overlay. An asymmetry response metric is determined based on a difference between the spectral signals measured at the two different azimuth angles within the selected sub-range of wavelengths. The value of the asymmetry response metric is mapped to an estimated value of wafer tilt or overlay. In some other embodiments, the measurement of wafer tilt or overlay is based on a trained measurement model. Training data may be programmed or determined based on one or more asymmetry response metrics at two different azimuth angles.