公开(公告)号：US20240402615A1

公开(公告)日：2024-12-05

申请号：US18370136

申请日：2023-09-19

Applicant: KLA Corporation

Inventor： Yaniv Weiss ,  Yuval Lubashevsky ,  Itay Gdor ,  Vladimir Levinski ,  Alon Alexander Volfman

IPC: G03F7/00 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956 ,  H04N23/10

Abstract: A method for overlay metrology may include generating broadband illumination beams and directing the broadband illumination beams to an overlay target on a sample, where the overlay target may include cells having periodic features formed as overlapping grating structures. The method may include generating diffracted light using the periodic features of the overlay target, where the periodic features may act as a diffraction grating to generate diffracted light by separating the broadband illumination beam into a plurality of wavelengths. The method may include generating pupil images of cells of the overlay target, where a distribution of light in the pupil plane may include first-order diffraction lobes, where spectra of the first-order diffraction lobes may be spatially dispersed in the pupil plane. The method may include generating an overlay measurement based on portions of the pupil images corresponding to selected wavelengths of the spectra of the first-order diffraction lobes.

公开(公告)号：US20240337953A1

公开(公告)日：2024-10-10

申请号：US18372531

申请日：2023-09-25

Applicant: KLA Corporation

Inventor： Itay Gdor ,  Mordechy Kot ,  Yuval Lubashevsky ,  Nickolai Isakovitch ,  Daria Negri

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/706831 ,  G03F7/706837 ,  G03F7/706849 ,  G03F7/706851

Abstract: A method may include receiving time-varying interference signals from two or more photodetectors associated with a grating structure and a reference grating structure. The grating structure may include one or more diffraction gratings, where the reference grating structure includes a reference grating arranged next to the one or more diffraction gratings of the grating structure and where the one or more illumination beams simultaneously interact with grating structure and the reference grating structure as the sample is scanned relative to the illumination beam. The method may include determining at least one of a real-time position or a scanning velocity of the grating structure during the scan based on the reference grating signal. The method may include determining one or more overlay errors based on the grating signals from the grating structure and the real-time position of the grating structure during the scan determined based on the reference grating signal.

公开(公告)号：US20240337952A1

公开(公告)日：2024-10-10

申请号：US18372444

申请日：2023-09-25

Applicant: KLA Corporation

Inventor： Itay Gdor ,  Yonatan Vaknin ,  Nireekshan K. Reddy ,  Alon Alexander Volfman ,  Iftach Galon ,  Jordan Pio ,  Yuval Lubashevsky ,  Nickolai Isakovitch ,  Andrew V. Hill ,  Oren Lahav ,  Daria Negri ,  Vladimir Levinski

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/7015

Abstract: A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure and the second exposure structure form a side-by-side grating, where the side-by-side grating includes one or more diffraction gratings, where at least one diffraction grating is a non-overlapping side-by-side grating, where the first exposure structure is arranged adjacent to the second exposure structure, where the side-by-side grating is periodic along the scan direction. The method may further include determining an overlay error between one of the first exposure structure and the second exposure structure of the sample based on the time-varying interference signals, where the time-varying interference signals corresponding to the non-overlapping first exposure structure and second exposure structure are synchronized.

公开(公告)号：US12105431B2

公开(公告)日：2024-10-01

申请号：US17584335

申请日：2022-01-25

Applicant: KLA Corporation

Inventor： Itay Gdor ,  Yuval Lubashevsky ,  Alon Alexander Volfman ,  Daria Negri ,  Yevgeniy Men ,  Elad Farchi

IPC: G03F7/00 ,  G01N21/21 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G01N21/211 ,  G03F7/706849 ,  H01L22/12

Abstract: Metrology is performed on a semiconductor wafer using a system with an apodizer. A spot is formed on the semiconductor wafer with a diameter from 2 nm to 5 nm. The associated beam of light has a wavelength from 400 nm to 800 nm. Small target measurement can be performed at a range of optical wavelengths.

公开(公告)号：US12105414B2

公开(公告)日：2024-10-01

申请号：US17923471

申请日：2022-10-06

Applicant: KLA Corporation

Inventor： Itay Gdor ,  Yuval Lubashevsky ,  Daria Negri ,  Eitan Hajaj ,  Vladimir Levinski

IPC: G03F1/44 ,  G03F7/00 ,  H01L21/66

CPC classification number: G03F1/44 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12

Abstract: A method for semiconductor metrology includes depositing first and second overlying film layers on a semiconductor substrate and patterning the layers to define an overlay target. The target includes a first grating pattern in the first layer, including at least a first linear grating oriented in a first direction and at least a second linear grating oriented in a second direction perpendicular to the first direction, and a second grating pattern in the second layer, including at least a third linear grating identical to the first linear grating and a fourth linear grating identical to the second linear grating. The second grating pattern has a nominal offset relative to the first grating pattern by first and second displacements in the first and second directions, respectively. A scatterometric image of the substrate is captured and processed to estimate an overlay error between the patterning of the first and second layers.

公开(公告)号：US20240302751A1

公开(公告)日：2024-09-12

申请号：US18230542

申请日：2023-08-04

Applicant: KLA Corporation

Inventor： Jordan Pio ,  Yuval Lubashevsky ,  Itay Gdor ,  Nickolai Isakovitch

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70625 ,  G03F9/7088

Abstract: An overlay metrology target includes a multi-layer grating structure formed as an overlapping grating structure with different pitches on three or more layers of a sample. The three or more layers of the sample may include at least a first layer, a second layer, and a third layer, where the overlapping grating structure is periodic along at least one of the scan direction or a direction orthogonal to the scan direction. The multi-layer grating structure may include a first-layer grating on the first layer with a first pitch, a second-layer grating on the second layer with a second pitch, and a third-layer grating on the third layer with a third pitch.