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公开(公告)号：US5208643A
公开(公告)日：1993-05-04
申请号：US594528
申请日：1990-10-05
Applicant: James A. Fair
Inventor： James A. Fair
CPC classification number: G01J5/08 , C23C14/541 , G01J5/0846 , G01J5/58 , G01J2005/0074 , G01J5/0007
Abstract: The temperature and radiant energy emissivity of a semiconductor substrate or wafer undergoing processing are monitored by combining indications derived from an interferometer and the intensity of radiant energy emitted from the substrate. The radiant energy intensity is detected at adjacent maxima or minima in the intensity of the interference pattern.
Abstract translation: 通过组合来自干涉仪的指示和从衬底发射的辐射能的强度来监测正在进行处理的半导体衬底或晶片的温度和辐射能发射率。 辐射能强度在相邻的最大值或最小值处以干涉图案的强度被检测。
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公开(公告)号：US4565157A
公开(公告)日：1986-01-21
申请号：US480030
申请日：1983-03-29
Applicant: Daniel L. Brors , James A. Fair , Kenneth A. Monnig
Inventor： Daniel L. Brors , James A. Fair , Kenneth A. Monnig
IPC: C23C16/42 , C23C16/44 , C23C16/448 , C23C16/458 , C23C16/46 , C23C16/52 , H01L21/28 , H01L21/285 , C23C11/08
CPC classification number: C23C16/4412 , C23C16/42 , C23C16/4588
Abstract: An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by provided an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.
Abstract translation: 提供了一种用于通过化学气相沉积获得非常高质量的膜的装置，其中沉积是质量传输受限的。 根据优选实施例，提供了一种真空壳体，其被主动冷却到低于该温度发生的温度，同时晶片被加热以在晶片表面上沉积。 还提供了混合室系统，以确保反应气体在每个晶片表面上均匀地均匀分布。 通过提供排气歧管进一步增强了质量运输控制，排气歧管从分布在整个系统中的位置清除反应气体，以实现均匀的排气。 还提供了使用上述装置沉积富硅的硅化钨的方法。
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公开(公告)号：US07897215B1
公开(公告)日：2011-03-01
申请号：US10465721
申请日：2003-06-18
Applicant: James A. Fair , Nerissa Taylor
Inventor： James A. Fair , Nerissa Taylor
IPC: B05D3/06
CPC classification number: C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
Abstract: Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
Abstract translation: 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。
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公开(公告)号：US07157798B1
公开(公告)日：2007-01-02
申请号：US10984126
申请日：2004-11-08
Applicant: James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
Inventor： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
IPC: H01L23/48
CPC classification number: H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/76849 , H01L21/76867 , H01L21/76883 , H01L21/76889
Abstract: A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.
Abstract translation: 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。
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公开(公告)号：US06849122B1
公开(公告)日：2005-02-01
申请号：US10094308
申请日：2002-03-07
Applicant: James A. Fair
Inventor： James A. Fair
CPC classification number: C23C16/45525 , C23C16/18 , C23C16/56 , C30B25/02 , C30B29/02
Abstract: A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.
Abstract translation: CVD法在衬底表面的小特征上沉积保形金属层。 该方法包括三个主要操作：在一些或所有基板表面上沉积薄的前体前体的共形层; 氧化前体以将其转化成金属氧化物的共形层; 并且还原一些或全部金属氧化物以将其转化为金属本身的共形层。 前体的共形层可以在基底表面上形成“单层”。 用于沉积的金属的实例包括铜，钴，钌，铟和铑。
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Patent Agency Ranking
公开(公告)号：US06720260B1
公开(公告)日：2004-04-13
申请号：US10600622
申请日：2003-06-20
Applicant: James A. Fair , Nerissa Taylor
Inventor： James A. Fair , Nerissa Taylor
IPC: C23C16452
CPC classification number: C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
Abstract: Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
Abstract translation: 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。
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公开(公告)号：US06627268B1
公开(公告)日：2003-09-30
申请号：US09849075
申请日：2001-05-03
Applicant: James A. Fair , Wilbert van den Hoek , Nerissa Taylor
Inventor： James A. Fair , Wilbert van den Hoek , Nerissa Taylor
IPC: C23C16452
CPC classification number: C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
Abstract: Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
Abstract translation: 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。
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公开(公告)号：US20080156264A1
公开(公告)日：2008-07-03
申请号：US11616324
申请日：2006-12-27
Applicant: James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
Inventor： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
IPC: C23C16/00
CPC classification number: H01J37/32449 , H01J37/321 , H01J37/3244 , H01J37/32458 , H01J37/32467 , H01J37/32633 , H01J37/32651 , H01J2237/335
Abstract: Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.
Abstract translation: 提供了用于灰化工件的等离子体发生器装置的实施例。 该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。 容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。 气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。 射频发生器耦合到线圈。
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公开(公告)号：US07144806B1
公开(公告)日：2006-12-05
申请号：US10279147
申请日：2002-10-23
Applicant: James A. Fair , Jungwan Sung , Nerissa Taylor
Inventor： James A. Fair , Jungwan Sung , Nerissa Taylor
IPC: H01L21/44 , H01L21/4763 , H01L21/8242
CPC classification number: H01L21/76843 , C23C16/14 , C23C16/38 , C23C16/42 , C23C16/45542 , H01L21/28562
Abstract: An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.
Abstract translation: ALD方法在基底表面的小特征上沉积保形的含钽材料层。 该方法包括以下主要操作：在一些或全部基板表面上沉积薄的共形和饱和的含钽前体层; 使用惰性气体或氢气等离子体清洗卤素副产物和未使用的反应物; 减少前体以将其转变成钽或含钽材料的保形层; 使用惰性气体或氢等离子体的另一吹扫来除去卤素副产物和未使用的反应物; 并重复沉积/还原循环，直到达到所需的含钽材料层。 可以加入用含氮试剂处理含有钽的材料的每个新形成的表面的可选步骤，以产生不同量的氮化钽。
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20.发明授权Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus 有权在CVD装置中防止和清洁含钌沉积物的方法公开(公告)号：US07107998B2
公开(公告)日：2006-09-19
申请号：US10687318
申请日：2003-10-16
Applicant: Harold F. R. Greer , James A. Fair , Junghwan Sung , Nerissa Sue Draeger
Inventor： Harold F. R. Greer , James A. Fair , Junghwan Sung , Nerissa Sue Draeger
CPC classification number: C23G5/00 , C23C16/16 , C23C16/4405
Abstract: Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.
Abstract translation: 在钌沉积设备中提供一氧化碳气体以从设备表面清洁不需要的含钌沉积物。 一氧化碳气体与设备管道和钌沉积反应室中的反应气体混合，以抑制在设备表面上形成不需要的钌沉积物并除去钌沉积物。
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