公开(公告)号：US07563753B2

公开(公告)日：2009-07-21

申请号：US10317578

申请日：2002-12-12

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

IPC分类号： C11D7/50

CPC分类号： C11D3/3738 ,  C11D1/44 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D3/373 ,  C11D3/3742 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/422

摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

摘要翻译： 公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。 清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物， 式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物 。 其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

公开(公告)号：US06482565B1

公开(公告)日：2002-11-19

申请号：US09448964

申请日：1999-11-24

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： C07D407/12 ,  C07D317/12 ,  C07D319/06

摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.

摘要翻译： 本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。 根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物 酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸， 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮， 包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

公开(公告)号：US06455225B1

公开(公告)日：2002-09-24

申请号：US09640261

申请日：2000-08-16

申请人： Keun Kyu Kong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

发明人： Keun Kyu Kong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： C08F32/00 ,  C07C43/305 ,  C07C2602/42 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

摘要： The present invention provides novel photoresist monomers, and photoresist polymers derived from monomers comprising the same. The photoresist monomers of the present invention are represented by the following formula: where Z1, Z2, R1, R2, R3, R4, R5 and p are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

摘要翻译： 本发明提供新型光致抗蚀剂单体和衍生自包含其的单体的光致抗蚀剂聚合物。 本发明的光致抗蚀剂单体由下式表示：其中Z 1，Z 2，R 1，R 2，R 3，R 4，R 5和p是本文定义的那些。 包含本发明的光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

公开(公告)号：US06395451B1

公开(公告)日：2002-05-28

申请号：US09666932

申请日：2000-09-21

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： H01L21/02118 ,  G03F7/0045 ,  G03F7/039 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/312 ,  Y10S430/115 ,  Y10S430/12

摘要： The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.

摘要翻译： 本发明涉及一种含光致抗蚀剂组合物，更具体地说涉及光致抗蚀剂组合物，该组合物包括（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d） 发电机。 光产生剂优选选自化学式1的苄氧基羰基化合物或化学式2的O-酰氧基肟化合物，其防止形成浆液形成和严重的I / D偏差。其中R'，R 1至R 6定义在 符合规范。

公开(公告)号：US06368773B1

公开(公告)日：2002-04-09

申请号：US09448916

申请日：1999-11-24

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik ,  Jin Soo Kim

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik ,  Jin Soo Kim

IPC分类号： G03F7027

CPC分类号： C08F216/38 ,  C07C43/303 ,  C08F220/06 ,  G03F7/0382

摘要： The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.

摘要翻译： 本发明涉及适用于使用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺的光致抗蚀剂组合物的交联剂。 根据本发明，优选的交联剂包含（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸，甲基丙烯酸 其中R1和R2分别表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，直链或支链C1-10 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮直链或支链C 1-10 包含至少一个羟基的羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; 并且R 3表示氢或甲基。

公开(公告)号：US06291131B1

公开(公告)日：2001-09-18

申请号：US09383547

申请日：1999-08-26

申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

公开(公告)号：US07208260B2

公开(公告)日：2007-04-24

申请号：US10080507

申请日：2002-02-22

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  C08F232/00

CPC分类号： G03F7/039 ,  C07C69/54 ,  C08F22/105 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

摘要： The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R′ and R″ individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

摘要翻译： 本发明公开了由以下化学式1表示的交联单体，使用该交联单体的光致抗蚀剂聚合物的制备方法，所述光致抗蚀剂聚合物：其中，R'和R“分别表示氢或甲基 ; m表示1〜10的数; 并且R选自直链或支链C 1-10烷基，直链或支链C 1-10 1-10酯，直链或支链C 1〜 直链或支链C 1-10 1-10羧酸，直链或支链C 1-10 - 缩醛，直链或支链C 1-10 包括至少一个羟基，直链或支链C 1-10 1-10酯，包括至少一个羟基，直链或支链C 1-10 1-10酮，包括 至少一个羟基，包括至少一个羟基的直链或支链C 1-10 - 羧酸，和包含至少一个羟基的直链或支链C 1-10 - 组。

公开(公告)号：US06764806B2

公开(公告)日：2004-07-20

申请号：US09728535

申请日：2000-12-01

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Cha Won Koh ,  Jin Soo Kim ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Cha Won Koh ,  Jin Soo Kim ,  Ki Ho Baik

IPC分类号： G03C1492

CPC分类号： G03F7/0045 ,  G03F7/039 ,  G03F7/11 ,  Y10S430/168

摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

摘要翻译： 本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

公开(公告)号：US06664031B2

公开(公告)日：2003-12-16

申请号：US09852377

申请日：2001-05-10

申请人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

IPC分类号： G03F726

CPC分类号： G03F7/36

摘要： A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

摘要翻译： 公开了一种制备光致抗蚀剂图案的方法。 特别地，所公开的形成光致抗蚀剂图案的方法减少或防止质量差的光致抗蚀剂图案形成，特别是当使用高光吸收（即低透光率）光致抗蚀剂树脂时。 在一个方面，已曝光的光致抗蚀剂膜用气相碱性化合物处理以产生基本垂直的光致抗蚀剂图案。

公开(公告)号：US06514665B1

公开(公告)日：2003-02-04

申请号：US09651809

申请日：2000-08-30

申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

摘要： The present invention relates to a compound that is useful as an additive for improving post exposure delay stability in a photoresist composition, and a photoresist composition containing the same. In particular, it has been found that a compound of the formula: where A, R1 to R3 are defined herein, can efficiently prevent or reduce the phenomenon of a lack of pattern formation and T-topping resulting from post exposure delay (PED) by reducing influences of environmental amine compounds. PED is a disadvantage of alicyclic compounds used in the lithography process using light sources such as KrF, ArF, VUV, E-beam, ion beam and EUV.

摘要翻译： 本发明涉及可用作改善光致抗蚀剂组合物中的曝光后延迟稳定性的添加剂的化合物和含有它们的光致抗蚀剂组合物。 特别地，已经发现，下式化合物：其中A，R 1至R 3在本文中定义，可以有效地防止或减少由后曝光延迟（PED）引起的图案形成和T形顶部缺乏的现象 减少环境胺化合物的影响。 PED是使用诸如KrF，ArF，VUV，电子束，离子束和EUV的光源的光刻工艺中使用的脂环族化合物的缺点。