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11.发明申请公开(公告)号：US20220187705A1
公开(公告)日：2022-06-16
申请号：US17689135
申请日：2022-03-08
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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12.发明授权公开(公告)号：US11300876B2
公开(公告)日：2022-04-12
申请号：US16446732
申请日：2019-06-20
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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13.发明授权公开(公告)号：US11187986B2
公开(公告)日：2021-11-30
申请号：US16810924
申请日：2020-03-06
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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14.发明申请公开(公告)号：US20190391486A1
公开(公告)日：2019-12-26
申请号：US16446732
申请日：2019-06-20
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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15.发明授权公开(公告)号：US12105418B2
公开(公告)日：2024-10-01
申请号：US18521779
申请日：2023-11-28
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
CPC classification number: G03F7/0043 , B05D1/005 , C08G79/12 , G03F7/168 , G03F7/20
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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Patent Agency Ranking
公开(公告)号：US20230251569A1
公开(公告)日：2023-08-10
申请号：US18136414
申请日：2023-04-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Thomas J. Lamkin , Mark Genzia , Joseph B. Edson , Craig M. Gates
CPC classification number: G03F7/0042 , G03F7/2004
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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17.发明申请公开(公告)号：US20200239498A1
公开(公告)日：2020-07-30
申请号：US16262264
申请日：2019-01-30
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Mark Geniza , Craig M. Gates
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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公开(公告)号：US20180046086A1
公开(公告)日：2018-02-15
申请号：US15674934
申请日：2017-08-11
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
CPC classification number: G03F7/422 , G03F7/0042 , G03F7/162 , G03F7/168 , H01L21/02087 , H01L21/0273 , H01L21/67051
Abstract: Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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19.发明申请公开(公告)号：US20240427237A1
公开(公告)日：2024-12-26
申请号：US18823620
申请日：2024-09-03
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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20.发明授权公开(公告)号：US11740559B2
公开(公告)日：2023-08-29
申请号：US17498437
申请日：2021-10-11
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
CPC classification number: G03F7/422 , G03F7/0042 , G03F7/162 , G03F7/168 , H01L21/0273 , H01L21/02087 , H01L21/67051
Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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