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公开(公告)号：US20230039497A1
公开(公告)日：2023-02-09
申请号：US17966105
申请日：2022-10-14
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Mark Geniza , Craig M. Gates
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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2.发明申请公开(公告)号：US20200239498A1
公开(公告)日：2020-07-30
申请号：US16262264
申请日：2019-01-30
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Mark Geniza , Craig M. Gates
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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3.发明申请公开(公告)号：US20220269169A1
公开(公告)日：2022-08-25
申请号：US17180500
申请日：2021-02-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Gaetano Giordano , Shu-Hao L. Chang , Dominick Smiddy , Mark Geniza , Craig M. Gates , Jan Doise , Peter de Schepper
Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
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4.发明公开公开(公告)号：US20240309027A1
公开(公告)日：2024-09-19
申请号：US18668864
申请日：2024-05-20
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Mark Geniza , Craig M. Gates
CPC classification number: C07F7/2296 , G03F7/0042 , G03F7/2004
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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5.发明授权公开(公告)号：US12072626B2
公开(公告)日：2024-08-27
申请号：US17180500
申请日：2021-02-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Gaetano Giordano , Shu-Hao L. Chang , Dominick Smiddy , Mark Geniza , Craig M. Gates , Jan Doise , Peter de Schepper
CPC classification number: G03F7/0042 , G03F7/162 , G03F7/168
Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
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Patent Agency Ranking
公开(公告)号：US12024534B2
公开(公告)日：2024-07-02
申请号：US17966105
申请日：2022-10-14
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Mark Geniza , Craig M. Gates
CPC classification number: C07F7/2296 , G03F7/0042 , G03F7/2004
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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7.发明申请公开(公告)号：US20240369923A1
公开(公告)日：2024-11-07
申请号：US18778388
申请日：2024-07-19
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Gaetano Giordano , Shu-Hao Chang , Dominick Smiddy , Mark Geniza , Craig M. Gates , Jan Doise , Peter De Schepper
Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.
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公开(公告)号：US11966158B2
公开(公告)日：2024-04-23
申请号：US16262233
申请日：2019-01-30
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Thomas J. Lamkin , Mark Geniza , Joseph B. Edson , Craig M. Gates
CPC classification number: G03F7/0042 , G03F7/2004
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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公开(公告)号：US11498934B2
公开(公告)日：2022-11-15
申请号：US16262264
申请日：2019-01-30
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Mark Geniza , Craig M. Gates
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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公开(公告)号：US20200241413A1
公开(公告)日：2020-07-30
申请号：US16262233
申请日：2019-01-30
Applicant: Inpria Corporation
Inventor： Benjamin L. Clark , Dominick Smiddy , Thomas J. Lamkin , Mark Geniza , Joseph B. Edson , Craig M. Gates
Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
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