公开(公告)号：US12072626B2

公开(公告)日：2024-08-27

申请号：US17180500

申请日：2021-02-19

Applicant: Inpria Corporation

Inventor： Benjamin L. Clark ,  Gaetano Giordano ,  Shu-Hao L. Chang ,  Dominick Smiddy ,  Mark Geniza ,  Craig M. Gates ,  Jan Doise ,  Peter de Schepper

IPC: G03F7/004 ,  G03F7/16

CPC classification number: G03F7/0042 ,  G03F7/162 ,  G03F7/168

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

公开(公告)号：US20220269169A1

公开(公告)日：2022-08-25

申请号：US17180500

申请日：2021-02-19

Applicant: Inpria Corporation

Inventor： Benjamin L. Clark ,  Gaetano Giordano ,  Shu-Hao L. Chang ,  Dominick Smiddy ,  Mark Geniza ,  Craig M. Gates ,  Jan Doise ,  Peter de Schepper

IPC: G03F7/004 ,  C09D7/63

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

公开(公告)号：US20240369923A1

公开(公告)日：2024-11-07

申请号：US18778388

申请日：2024-07-19

Applicant: Inpria Corporation

Inventor： Benjamin L. Clark ,  Gaetano Giordano ,  Shu-Hao Chang ,  Dominick Smiddy ,  Mark Geniza ,  Craig M. Gates ,  Jan Doise ,  Peter De Schepper

IPC: G03F7/004 ,  G03F7/16

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.