公开(公告)号：US07597866B2

公开(公告)日：2009-10-06

申请号：US11630528

申请日：2004-09-28

Applicant: Shunsuke Hosokawa ,  Hideki Yagi ,  Takagimi Yanagitani

Inventor： Shunsuke Hosokawa ,  Hideki Yagi ,  Takagimi Yanagitani

IPC: C04B35/50

CPC classification number: C04B35/50 ,  C04B35/62655 ,  C04B35/6303 ,  C04B35/64 ,  C04B35/6455 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3286 ,  C04B2235/444 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/87 ,  C04B2235/9653 ,  H01J61/302

Abstract: The present invention provides a lutetium oxide sinter to which yttrium is added in an amount of 100 mass ppm to 7000 mass ppm, whose average particle size is from 0.7 to 20 μm, and with which there is no precipitation of a hetero phase containing yttrium at the grain boundary.

Abstract translation: 本发明提供一种镥氧化物烧结体，其中添加钇的量为100质量ppm至7000质量ppm，其平均粒度为0.7至20μm，并且不存在含钇杂质的沉淀 晶界。

公开(公告)号：US20090141764A1

公开(公告)日：2009-06-04

申请号：US12289709

申请日：2008-10-31

Applicant: Hideki Yagi ,  Toshio Nomaguchi ,  Kenji Hiratsuka

Inventor： Hideki Yagi ,  Toshio Nomaguchi ,  Kenji Hiratsuka

IPC: H01S5/22 ,  H01L21/02

CPC classification number: H01S5/2231 ,  H01S5/0425 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/222

Abstract: In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.

Abstract translation: 在制造半导体激光器的方法中，半导体区域在有源层上生长，并且半导体区域的一部分被蚀刻以形成脊结构。 在脊结构上形成绝缘膜，形成感光材料的树脂层以埋设脊结构。 通过进行树脂层的光刻曝光，在树脂层中形成固化树脂部分和未固化的树脂部分，未固化的树脂部分在脊部结构的顶部。 去除未固化的树脂部分以形成设置在脊结构的顶部上的凹陷。 将固化的树脂部分和凹陷的整个表面蚀刻以形成蚀刻的树脂层。 通过使固化的树脂部分变薄，在蚀刻的树脂层中形成开口，并且绝缘膜的一部分暴露在蚀刻的树脂层的开口中。 使用蚀刻树脂层作为掩模来蚀刻绝缘膜的一部分，以在绝缘膜中形成开口。 在脊结构和蚀刻树脂层上形成电极。

公开(公告)号：US06901975B2

公开(公告)日：2005-06-07

申请号：US10608547

申请日：2003-06-30

Applicant: Masafumi Aramata ,  Hideki Yagi ,  Toshikazu Hirayama ,  Satoru Igarashi ,  Yoshihisa Murai ,  Teruhisa Hirobe

Inventor： Masafumi Aramata ,  Hideki Yagi ,  Toshikazu Hirayama ,  Satoru Igarashi ,  Yoshihisa Murai ,  Teruhisa Hirobe

IPC: A61J3/00 ,  A61J1/00 ,  A61J1/20 ,  A61M5/178 ,  A61M5/32 ,  B65B1/04

CPC classification number: A61J1/2096 ,  A61J1/201 ,  A61J1/2075 ,  A61J2200/10 ,  A61M5/1782 ,  A61M2205/195

Abstract: The drug solution container with a connector for communicating contains a drug solution container having at a tip end thereof an injection needle connecting part, and a hollow connector for communicating attached to a tip end of the drug solution container, and the connector for communicating contains a cylindrical guide part with a bottom capable of being slidably attached to an opening of a vial, and a hollow penetrating member provided at a center of the bottom of the guide part to penetrate the bottom. The penetrating member contains a penetrating needle at a tip end side with respect to the bottom, and a connecting part at a base end side with respect to the bottom, and the connecting part is connected to the injection needle connecting part through a fragile portion. According to the drug solution container with a connector for communicating, an operation for preparation of a drug solution can be easily carried out in a short period of time without causing injury of an operator or coring.

Abstract translation: 具有连通器的药液容器具有药液容器，其前端具有注射针连接部，以及连接于药液容器的前端的中空连接器，连通用连接器包含： 具有能够滑动地附接到小瓶的开口的底部的圆柱形引导部分，以及设置在引导部分的底部的中心以穿透底部的中空穿透部件。 穿透构件在相对于底部的前端侧包含穿刺针，在底端侧具有相对于底部的连接部，连接部通过脆弱部与注射针连接部连接。 根据具有用于连通的连接器的药液容器，可以在短时间内容易地进行药液的制备操作，而不会造成操作者的伤害或取芯。

公开(公告)号：US4933953A

公开(公告)日：1990-06-12

申请号：US239287

申请日：1988-09-01

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: H04J13/00 ,  H04B1/7075

CPC classification number: H04B1/70755

Abstract: An initial synchronization system for spread spectrum communication including a despreader-demodulator circuit for despreading and demodulating an input signal according to a despread control signal, a decoder circuit for decoding a data signal demodulated by the despreader-demodulator circuit and outputting a code synchronization signal when code synchronization is taken, a correlation detector circuit in response to the input signal for detecting the correlation of the input signal and generating the despread control signal and a correlation detection signal, and a control circuit for outputting an initial synchronization start signal to the correlation detector circuit so as to cause the correlation detector circuit to start the initial synchronization if the code synchronization signal is not generated within a predetermined period after the correlation detection signal was generated.

Abstract translation: 一种用于扩展频谱通信的初始同步系统，包括：解扩器解调器电路，用于根据解扩控制信号对输入信号进行解扩和解调;解码器电路，用于对由解扩器解调器电路解调的数据信号进行解码，并输出编码同步信号， 进行代码同步，响应于用于检测输入信号的相关性并产生解扩控制信号的输入信号和相关检测信号，相关检测器电路，以及用于向相关检测器输出初始同步开始信号的控制电路 电路，以便在产生相关检测信号之后的预定时段内不产生码同步信号，使相关检测器电路开始初始同步。

公开(公告)号：US08642365B2

公开(公告)日：2014-02-04

申请号：US13443944

申请日：2012-04-11

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: H01L21/00

CPC classification number: H01S5/1231 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/125 ,  H01S5/22 ,  H01S2301/176

Abstract: A method of manufacturing a ridge-type semiconductor laser includes the steps of forming a stacked semiconductor layer including an active layer and an etch stop layer on first and second surfaces of a substrate, etching the stacked semiconductor layer on the second surface, forming a semiconductor portion on the second surface, forming a ridge waveguide portion by etching the stacked semiconductor layer on the first surface to a first depth, forming semiconductor diffraction grating portions by etching the semiconductor portion to a second depth, and forming a diffraction grating section by providing resin diffraction grating portions between the semiconductor diffraction grating portions. The etching of the stacked semiconductor layer on the first surface and the etching of the semiconductor portion are performed simultaneously by using first and second mask portions.

Abstract translation: 制造脊型半导体激光器的方法包括以下步骤：在衬底的第一和第二表面上形成包括有源层和蚀刻停止层的堆叠半导体层，蚀刻第二表面上的堆叠半导体层，形成半导体 通过将第一表面上的堆叠半导体层蚀刻到第一深度而形成脊波导部分，通过将半导体部分蚀刻到第二深度形成半导体衍射光栅部分，并且通过提供树脂形成衍射光栅部分 半导体衍射光栅部分之间的衍射光栅部分。 通过使用第一和第二掩模部分同时进行第一表面上的层叠半导体层的蚀刻和半导体部分的蚀刻。

公开(公告)号：US08617969B2

公开(公告)日：2013-12-31

申请号：US13530154

申请日：2012-06-22

Applicant: Kenji Sakurai ,  Hideki Yagi ,  Hiroyuki Yoshinaga

Inventor： Kenji Sakurai ,  Hideki Yagi ,  Hiroyuki Yoshinaga

IPC: H01L21/00

CPC classification number: H01L33/0075 ,  H01S5/2275

Abstract: A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.

Abstract translation: 一种制造半导体光学器件的方法包括以下步骤：在衬底的主表面上生长包括蚀刻停止层和多个半导体层的半导体堆叠层; 在所述半导体层叠层的顶面上形成掩模层，使得在所述半导体堆叠层的生长步骤中产生的突起中从所述顶面突出的突起的前端部露出; 通过使用掩模层的湿蚀刻来蚀刻突起; 在通过湿蚀刻蚀刻突起之后，通过干蚀刻去除突起; 并且通过干蚀刻去除突起之后从顶表面去除掩模层。

公开(公告)号：US07128731B2

公开(公告)日：2006-10-31

申请号：US10319638

申请日：2002-12-16

Applicant: Masafumi Aramata ,  Hideki Yagi ,  Hitoshi Futagawa ,  Satoru Igarashi

Inventor： Masafumi Aramata ,  Hideki Yagi ,  Hitoshi Futagawa ,  Satoru Igarashi

IPC: A61M5/00

CPC classification number: A61J1/2096 ,  A61J1/201 ,  A61J1/2089 ,  A61M5/34 ,  A61M2005/3201 ,  A61M2005/3279 ,  A61M2205/192

Abstract: A syringe-type container for liquid medicine which includes a barrel provided with an easily breakable piercing needle at a distal end of a needle-connecting portion thereof; a gasket inserted and held in the barrel; and a guide means fitted on the barrel from the distal side wherein. The syringe-type container is so constructed that turning of the guide means relative to the barrel breaks off the piercing needle from the needle-connecting portion.

Abstract translation: 一种用于液体药物的注射器型容器，其包括在其针连接部分的远端处设置有易破裂的穿刺针的筒体; 插入并保持在桶中的垫圈; 以及从远侧装配在筒体上的引导装置。 注射器型容器被构造成使得引导装置相对于桶的转动使穿刺针从针连接部分断开。

公开(公告)号：US20050257017A1

公开(公告)日：2005-11-17

申请号：US10846757

申请日：2004-05-14

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: G06F21/24 ,  G06F12/00 ,  G06F12/14 ,  G06F12/16 ,  G06F21/00 ,  G06K17/00 ,  G06K19/07 ,  G11C16/16

CPC classification number: G06F21/79 ,  G06F2221/2143 ,  G11C16/16

Abstract: Methods, apparatus, software and systems for securely erasing data from a memory card. A number of hidden spare blocks of memory in an inaccessible region of each memory bank is determined. A block of memory is repeatedly overwritten with a data pattern in each memory bank up to the number of hidden spare blocks in one embodiment. A block of memory is repeatedly erased in each memory bank up to the number of hidden spare blocks in another embodiment. The blocks of memory in the accessible region of each memory bank are erased or overwritten with the data pattern.

Abstract translation: 用于从存储卡安全地擦除数据的方法，装置，软件和系统。 确定每个存储体的不可访问区域中的多个隐藏的存储器的备用块。 在一个实施例中，存储器块在每个存储器组中被重复地覆盖，直到隐藏的备用块的数量。 在另一个实施例中，每个存储器组中的存储块被重复地擦除，直到隐藏的备用块的数量。 每个存储体的可访问区域中的存储块被数据模式擦除或重写。

公开(公告)号：US08731344B2

公开(公告)日：2014-05-20

申请号：US13478280

申请日：2012-05-23

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: G02B6/12 ,  G02B6/10 ,  G02F1/015 ,  H01L21/302 ,  B29D11/00 ,  B23B9/04 ,  H01L21/36

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2201/066

Abstract: A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer.

Abstract translation: 一种制造半导体光调制器的方法包括在p型半导体衬底的主表面上形成p型半导体层; 在p型半导体层上形成一对条形掩模，所述条形掩模沿着所述p型半导体衬底的主表面沿第一方向延伸并且彼此间隔开; 同时形成通过蚀刻p型半导体层通过条形掩模在第一方向延伸的孔和一对条纹结构，所述一对条纹结构限定该孔; 在去除条形掩模之后，在孔中形成掩埋层; 在掩埋层和条纹结构上形成核心层; 以及在所述芯层上形成上包层。 埋层由具有比p型半导体层低的光吸收损耗的半导体材料制成。

公开(公告)号：US08218591B2

公开(公告)日：2012-07-10

申请号：US12971476

申请日：2010-12-17

Applicant: Yutaka Onishi ,  Hideki Yagi

Inventor： Yutaka Onishi ,  Hideki Yagi

IPC: H01S3/04

CPC classification number: H01S5/22 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/2213 ,  H01S5/2231 ,  H01S2301/176

Abstract: An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in the active layer is guided. The ridge waveguide structure is buried by a thick resin layer in both sides thereof, but the resin layer is removed in the edge regions close to respective facets of the LD.

Abstract translation: 公开了一种在边缘区域具有改善的散热功能的LD。 LD提供包括有源层并延伸整个基板的芯区域，以及沿着在有源层中产生的光被引导的方向延伸的芯区域上的脊波导结构。 脊形波导结构在其两侧被厚树脂层掩埋，但是在靠近LD的各个面的边缘区域中除去树脂层。