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公开(公告)号：US20240012047A1
公开(公告)日：2024-01-11
申请号：US18020273
申请日：2021-06-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Akihito UCHIKADO , Mitsunori NISHIZAWA
IPC: G01R31/311 , G01R31/317
CPC classification number: G01R31/311 , G01R31/31709
Abstract: An inspection apparatus includes a light source that emits light, an optical amplifier that amplifies input light and outputs the amplified light, an optical system (an objective lens, an imaging optical system, and a scanning optical system) that irradiates a semiconductor device with the light from the light source and guides light from the semiconductor device to the optical amplifier, and a photodetector that detects the light output from the optical amplifier, and the optical amplifier amplifies the input light so that saturation does not occur.
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公开(公告)号：US20220178837A1
公开(公告)日：2022-06-09
申请号：US17442158
申请日：2020-01-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA
Abstract: An inspection apparatus is an inspection apparatus for inspecting a sample on which a plurality of light-emitting elements is formed, and includes an excitation light source that generates excitation light to irradiate the sample, a camera that images fluorescence having a wavelength longer than a reference wavelength in fluorescence from the light-emitting elements, and a control apparatus that determines a quality of each of the light-emitting elements based on fluorescence imaged by the camera, in which the reference wavelength is a wavelength obtained by adding a full width at half maximum of a normal fluorescence spectrum of the light-emitting element to a peak wavelength of the normal fluorescence spectrum.
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公开(公告)号：US20200258794A1
公开(公告)日：2020-08-13
申请号：US16631520
申请日：2018-06-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Motohiro SUYAMA , Hironori TAKAHASHI
IPC: H01L21/66 , G01R31/311 , H01L31/18 , H01L31/08
Abstract: There is provided a semiconductor manufacturing method capable of coping with an increase in the density of an integrated circuit.A semiconductor manufacturing method according to one aspect of the present invention includes: a step of forming a memory cell, a photodiode that outputs an electrical signal corresponding to an input optical signal, and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell, so as to correspond to each chip forming region of a wafer having a plurality of chip forming regions; a step of inputting pump light for checking an operation of the memory cell to the photodiode and inspecting an operation state of the memory cell after the forming step; and a step of performing dicing for each of the chip forming regions after the inspection step.
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公开(公告)号：US20200176339A1
公开(公告)日：2020-06-04
申请号：US16631507
申请日：2018-06-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Motohiro SUYAMA , Hironori TAKAHASHI , Tomonori NAKAMURA
Abstract: There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed outside each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.
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公开(公告)号：US20180307030A1
公开(公告)日：2018-10-25
申请号：US16025288
申请日：2018-07-02
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Ikuo ARATA , Yoshihiro ITO
Abstract: An optical device for microscopic observation 4 comprises: a cold stop 13 having openings 13d, 13e corresponding to a low-magnification microscope optical system 5 and being a stop member arranged in a vacuum vessel 12 to let the light from the sample S pass to the camera 3; a warm stop 10 having an opening 14 corresponding to a high-magnification microscope optical system 5 and being a stop member arranged outside the vacuum vessel 12 to let the light from the sample S pass toward the cold stop 13; and a support member 11 supporting the warm stop 10 so that the warm stop can be inserted to or removed from on the optical axis of the light from the sample S, wherein the warm stop 10 has a reflective surface 15 on the camera 3 side and wherein the opening 14 is smaller than the openings 13d, 13e.
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Patent Agency Ranking
公开(公告)号：US20170123004A1
公开(公告)日：2017-05-04
申请号：US15402590
申请日：2017-01-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA
IPC: G01R31/311
CPC classification number: G01R31/311 , G01N25/72 , H01L23/34 , H01L2924/0002 , H01L2924/00
Abstract: A heat generation point detection method comprises steps S01, S02 of applying a low frequency bias voltage to an integrated circuit S and acquiring a heat generation detection signal detected from the integrated circuit S in response thereto, steps S03, S04 of supplying a high frequency bias voltage to the integrated circuit S and acquiring a heat generation detection signal detected from the integrated circuit S in response thereto, steps S05 to S07 of detecting a phase shift between the low frequency bias voltage and the heat generation detection signal and a phase shift between the high frequency bias voltage and the heat generation detection signal, and a step S08 of calculating a change rate of the phase shift against a square root of the frequency of the bias voltage, based on those phase shits, and acquiring depth information of a heat generation point from the change rate.
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公开(公告)号：US20160334459A1
公开(公告)日：2016-11-17
申请号：US15219946
申请日：2016-07-26
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Mitsunori NISHIZAWA
IPC: G01R31/265
CPC classification number: G01R31/2656 , G01N21/9501 , G01N2201/12 , G01R23/16 , G01R31/311 , H01L22/12
Abstract: A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof.
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18.发明申请SEMICONDUCTOR DEVICE INSPECTION DEVICE AND SEMICONDUCTOR DEVICE INSPECTION METHOD 有权半导体器件检测器件和半导体器件检测方法公开(公告)号：US20150369755A1
公开(公告)日：2015-12-24
申请号：US14764327
申请日：2014-01-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Mitsunori NISHIZAWA
CPC classification number: G01R31/2656 , G01N21/9501 , G01N2201/12 , G01R23/16 , G01R31/311 , H01L22/12
Abstract: A semiconductor device inspection system includes a laser light source for generating light to be irradiated a semiconductor device, an optical sensor for detecting the light reflected by the semiconductor device and outputting the detection signal, a tester unit for applying a operating signal to the semiconductor device, an electricity measurement unit to which the detection signal is input, an electricity measurement unit to which the detection signal and the operating signal are selectively input, and a switching unit having a detection signal terminal and a operating signal terminal. The switching unit inputs the detection signal to the electricity measurement unit by connecting a connection section to the detection signal terminal and inputs the operating signal by connecting the connection section to the operating signal terminal.
Abstract translation: 半导体器件检查系统包括用于产生要照射半导体器件的光的激光源，用于检测由半导体器件反射的光并输出检测信号的光学传感器，用于向半导体器件施加操作信号的测试器单元 ，输入检测信号的电力测量单元，选择性地输入检测信号和操作信号的电力测量单元，以及具有检测信号端子和操作信号端子的开关单元。 开关单元通过将连接部连接到检测信号端子将检测信号输入到电测量单元，并通过将连接部连接到操作信号端来输入操作信号。
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公开(公告)号：US20240178073A1
公开(公告)日：2024-05-30
申请号：US18284168
申请日：2022-02-02
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA
IPC: H01L21/66 , G01N21/55 , G01N21/95 , G01N21/956 , H01L33/00
CPC classification number: H01L22/12 , G01N21/55 , G01N21/9501 , G01N21/956 , H01L33/005
Abstract: A manufacturing method of a semiconductor device includes: a first step of forming a laminated film by growing crystals on a sapphire substrate, forming an insulating film on a laminated film, and forming contact holes at an electrical connection point of an n-GaN layer and an electrical connection point of a p-GaN layer in the insulating film to produce a first member; a second step of forming a conductive layer on the first member to produce a second member in which the conductive layer electrically connects the electrical connection point of the n-GaN layer and the electrical connection point of the p-GaN layer; a third step of irradiating the second member with excitation light and measuring light emission generated in the second member; and a fourth step of forming a first pad electrode and a second pad electrode to produce a semiconductor device.
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公开(公告)号：US20230066638A1
公开(公告)日：2023-03-02
申请号：US17797179
申请日：2021-02-02
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Kunihiko TSUCHIYA
Abstract: A height measurement apparatus includes: a light irradiation unit that irradiates a sample with irradiation light; a camera system that detects light from the sample irradiated with the irradiation light; and a control apparatus that calculates a height of the sample based on the wavelength information. The camera system includes an inclined dichroic mirror of which a transmittance and a reflectance change according to a wavelength in a predetermined wavelength range and which separates the light from the sample by transmitting and reflecting the light, a light detector that detects a reflected light quantity from light reflected by the inclined dichroic mirror, a light detector that detects a transmitted light quantity from light transmitted through the inclined dichroic mirror, and a processing unit that calculates the wavelength information based on a ratio between the reflected light quantity and the transmitted light quantity, to output the wavelength information.
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