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公开(公告)号:US20240027637A1
公开(公告)日:2024-01-25
申请号:US18032412
申请日:2021-09-03
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Soh UENOYAMA , Ryosuke OTA
CPC classification number: G01T1/249 , G01T1/248 , G01T1/2985 , A61B6/037
Abstract: A light detector includes a semiconductor light detection element having a plurality of light detection units disposed two-dimensionally and readout wirings and a plurality of metalenses disposed on a surface of the semiconductor light detection element. Each of the plurality of light detection units has an avalanche photodiode including a first semiconductor region and a second semiconductor region forming a PN junction with the first semiconductor region, and a quenching resistor including one end electrically connected to the second semiconductor region and another end electrically connected to the readout wiring. The plurality of metalenses are disposed two-dimensionally to overlap the plurality of light detection units, and converge light such that a convergence spot is located at a position which is within the first semiconductor region and which is separated by a predetermined distance from a boundary between the first semiconductor region and the second semiconductor region.
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公开(公告)号:US20220221705A1
公开(公告)日:2022-07-14
申请号:US17559040
申请日:2021-12-22
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Soh UENOYAMA
IPC: G02B21/33 , G02B21/24 , G01N21/3563 , G01N21/95
Abstract: An optical apparatus includes a stage configured to support a semiconductor device, a solid immersion lens configured to be brought into contact with the semiconductor device supported by the stage, and a photodetector disposed at a position opposite to the stage with respect to the solid immersion lens on an optical path passing through the solid immersion lens. The solid immersion lens includes a base part having a first surface to be brought into contact with the semiconductor device and a second surface opposite to the first surface, and a meta-lens disposed on the second surface.
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公开(公告)号:US20210273411A1
公开(公告)日:2021-09-02
申请号:US17054000
申请日:2019-05-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Soh UENOYAMA , Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Hiroshi TANAKA
Abstract: The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.
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14.
公开(公告)号:US20210239752A1
公开(公告)日:2021-08-05
申请号:US17052969
申请日:2019-04-11
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Soh UENOYAMA , Yuu TAKIGUCHI , Hirotoshi TERADA
IPC: G01R31/311 , G02B1/02 , G02B7/02 , G02B21/02
Abstract: The present disclosure relates to a metalens unit including a metalens having a structure for reducing a thickness. The metalens unit includes a metalens and a holding portion for the metalens. The metalens includes a base portion and a first antenna portion. The first antenna portion is constituted by a plurality of first antennas each having a first refractive index and a first intermediate portion having a second refractive index and positioned between the plurality of first antennas. A first antenna portion is formed such that one-dimensional arrangement constituted by some of end surfaces of the plurality of first antennas includes a pattern in which at least one of a size of the end surface, a shape of the end surface, and an arrangement pitch is changed along a reference line.
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公开(公告)号:US20190312410A1
公开(公告)日:2019-10-10
申请号:US16432198
申请日:2019-06-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Yoshiro NOMOTO , Soh UENOYAMA
Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.
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公开(公告)号:US20250079792A1
公开(公告)日:2025-03-06
申请号:US18844129
申请日:2023-03-06
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kibo OTE , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Yuu TAKIGUCHI , Takahiro SUGIYAMA , Soh UENOYAMA
Abstract: A semiconductor light-emitting element includes a semiconductor stacked layer, an electrode, and an electrode. The semiconductor stacked layer includes an active layer and a phase modulation layer. The phase modulation layer includes a plurality of phase modulation areas. Each of the plurality of phase modulation areas includes a basic region which has a first refractive index and a plurality of different-refractive-index regions which have a second refractive index different from the first refractive index and which are distributed in a two-dimensional shape. The electrode includes a plurality of electrode parts overlapping the plurality of phase modulation areas when seen in a stacking direction of the semiconductor stacked layer. The plurality of electrode parts are electrically isolated from each other. Laser light oscillating in each of the plurality of phase modulation areas is applied to a common irradiation area as light images according to arrangement of the plurality of different-refractive-index regions.
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公开(公告)号:US20240030366A1
公开(公告)日:2024-01-25
申请号:US18265010
申请日:2021-09-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hayato ISHIDA , Masaki HIROSE , Noburo HOSOKAWA , Soh UENOYAMA , Kazuyoshi HIROSE , Kazunori TANAKA
IPC: H01L31/0232 , H01L31/0216
CPC classification number: H01L31/02327 , H01L31/02161
Abstract: The light detector includes: a substrate including at least one light receiving area and a light incident surface on which light is incident; and a meta-lens formed on the light incident surface of the substrate to focus the light incident on the light incident surface. When viewed from the thickness direction (Z-axis direction) of the substrate, the meta-lens is formed so as to overlap both an adjacent region adjacent to the light receiving area and a peripheral region that is continuous with the adjacent region and is a region inside the light receiving area along the outer edge of the light receiving area. When viewed from the Z-axis direction, a non-forming region in which the meta-lens is not formed is provided in a region overlapping a central region of the light receiving area in the light incident surface.
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公开(公告)号:US20230102430A1
公开(公告)日:2023-03-30
申请号:US17792181
申请日:2021-01-15
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Soh UENOYAMA
Abstract: An embodiment relates to a light source module dynamically controlling a phase distribution of light. The light source module includes a semiconductor stack portion. The semiconductor stack portion includes a stacked body including an active layer and a photonic crystal layer causing Γ-point oscillation, and includes a phase synchronization portion and an intensity modulation portion which are arranged in a Y-direction as one resonance direction of the photonic crystal layer. The stacked body in the intensity modulation portion has M (≥2) pixels each arranged in an X-direction and including N1 (≥2) subpixels. A length of a region including consecutive N2 (≥2, ≤N1) subpixels among the N1 subpixels, defined in the X-direction, is smaller than an emission wavelength of the active layer. The light source module outputs laser light from each M pixel included in the intensity modulation portion in a direction intersecting both X- and Y-directions.
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19.
公开(公告)号:US20220278505A1
公开(公告)日:2022-09-01
申请号:US17749893
申请日:2022-05-20
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Yoshiro NOMOTO , Soh UENOYAMA
Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
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公开(公告)号:US20220187636A1
公开(公告)日:2022-06-16
申请号:US17598465
申请日:2020-03-27
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Soh UENOYAMA , Yoshitaka KUROSAKA , Kazuyoshi HIROSE
IPC: G02F1/03
Abstract: The present embodiment relates to a variable-phase device including a new device structure that can solve various problems. The variable-phase device includes M pixels (where M is an integer of 2 or more) arrayed one-dimensionally or two-dimensionally, the M pixels each emitting light or modulating light. The array pitch of the M pixels is less than the wavelength of incident light and is constant along a predetermined direction. Each of the M pixels includes N sub-pixels (where N is an integer of 2 or more) each having a structure allowing the phase of outgoing light to vary. With respect to each of the M pixels, N partial light beams outputted from the N sub-pixels are combined into light having a single phase in the far field.
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