摘要:
A light modulator includes a base layer made of an insulating material having a transmitting property for object light, a conductive pattern layer made of a conductive material, including a plurality of pattern portions arranged periodically, and formed on the base layer, a modulation layer made of an electro-optic polymer, filling a space between the plurality of pattern portions and formed on the conductive pattern layer, and having a refractive index to be changed by applying an electric field, and a reflection layer formed on the modulation layer and reflecting the object light incident from a lower surface of the base layer and transmitted through the modulation layer, and the object light having a phase modulated by being transmitted through the modulation layer and reflected by the reflection layer is output from the lower surface of the base layer to the outside as modulated light.
摘要:
The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
摘要:
In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0
摘要:
A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 μm. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.
摘要:
The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.
摘要:
The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
摘要:
A metamaterial optical member 100 includes a light collecting optical member 1 having a light-entering surface IN1 and a light-exiting surface OUT1 and having a light collecting function and an antireflection film 2 disposed in the light-exiting surface OUT1 of the light collecting optical member 1. The antireflection film 2 has a first metamaterial structure in which a refractive index is gradually reduced in the light travelling direction. The metamaterial optical member 100 includes the antireflection film 2 having the metamaterial structure, thereby externally extracting light.
摘要:
A light modulator includes a base layer, a metal reflective layer formed on the base layer, a modulation layer of a nonlinear optical crystal formed on the reflective layer, and a conductive pattern layer including a plurality of pattern portions arranged periodically in a first direction and each extending in a second direction, and formed on the modulation layer. The modulation layer changes a reflectance for object light by changing a refractive index when a voltage is applied between the reflective layer and the conductive pattern layer. The light modulator outputs the object light being incident from an upper surface side of the modulation layer, transmitted through the modulation layer, and reflected by the reflective layer to the outside as modulated light with an intensity modulated by the reflectance change.
摘要:
The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
摘要:
A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.