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    Photodetecting device with weak light signal detection and low power consumption
    13.
    发明授权
    Photodetecting device with weak light signal detection and low power consumption 有权

    公开(公告)号：US11183608B2

    公开(公告)日：2021-11-23

    申请号：US16348187

    申请日：2017-11-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shigeyuki Nakamura ,  Shunsuke Adachi ,  Takashi Baba ,  Terumasa Nagano ,  Koei Yamamoto

    IPC: H01L31/101 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0256 ,  H04N5/378

    Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes. The number of signal processing units included on the mount substrate is more than the number of light receiving regions in each of the pixels.

    Semiconductor light-detecting element
    18.
    发明授权
    Semiconductor light-detecting element 有权
    半导体光检测元件

    公开(公告)号：US09419159B2

    公开(公告)日：2016-08-16

    申请号：US14073249

    申请日：2013-11-06

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Akira Sakamoto ,  Takashi Iida ,  Koei Yamamoto ,  Kazuhisa Yamamura ,  Terumasa Nagano

    IPC: H01L31/0236 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

    CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n− type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n− type semiconductor substrate 1 is formed on the second principal surface 1b side of the n− type semiconductor substrate 1. After formation of the accumulation layer 11, the n− type semiconductor substrate 1 is subjected to a thermal treatment.

    Abstract translation: 制备的n型半导体衬底1具有彼此相对的第一主表面1a和第二主表面1b，并且具有形成在第一主表面1a侧上的p +型半导体区域3。 在n型半导体衬底1的第二主表面1b中至少与p +型半导体区域3相对的区域用脉冲激光束照射以形成不规则凹凸。在形成不规则凹凸10之后，积累 在n型半导体衬底1的第二主表面1b侧上形成杂质浓度高于n型半导体衬底1的层11。在形成蓄积层11之后，n型半导体衬底1 进行热处理。

    Photodiode array
    19.
    发明授权
    Photodiode array 有权
    光电二极管阵列

    公开(公告)号：US08754502B2

    公开(公告)日：2014-06-17

    申请号：US13710845

    申请日：2012-12-11

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Koei Yamamoto ,  Terumasa Nagano ,  Kazuhisa Yamamura ,  Kenichi Sato ,  Ryutaro Tsuchiya

    IPC: H01L29/861 ,  H01L21/20

    CPC classification number: H01L27/1446 ,  H01L31/107

    Abstract: Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.

    Abstract translation: 每个光检测单元包括输出载体的半导体区域和表面电极。 在光电二极管阵列中，读线被定位在相邻的雪崩光电二极管之间。 当将包括半导体区域的表面的平面设定为基准面时，从基准面到读取线的距离tb大于从基准面到表面电极的距离。

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