公开(公告)号：US10944016B2

公开(公告)日：2021-03-09

申请号：US16308116

申请日：2017-05-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryutaro Tsuchiya ,  Terumasa Nagano ,  Yuta Tsuji ,  Go Kawai ,  Yuki Okuwa

IPC: H01L31/0216 ,  G01J1/42 ,  G01J1/02 ,  H01L27/146 ,  G01J1/04 ,  G01J1/44 ,  H01L23/00 ,  H01L25/04 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/107 ,  H01L25/16 ,  H01L31/0232

Abstract: An optical detection unit includes a first wiring substrate that has a first main surface, a plurality of optical detection chips that each have a light receiving surface and a rear surface on a side opposite to the light receiving surface and are two-dimensionally arranged on the first main surface, a first bump electrode that electrically connects the optical detection chip to the first wiring substrate, a light transmitting portion that is provided on the light receiving surface, and a light shielding portion that has light reflection properties or light absorption properties. The optical detection chip includes a Geiger-mode APD and is mounted on the first wiring substrate by the first bump electrode in a state in which the rear surface faces the first main surface.

公开(公告)号：US10249784B2

公开(公告)日：2019-04-02

申请号：US15305371

申请日：2015-04-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Koei Yamamoto ,  Hiroshi Okamoto ,  Masaomi Takasaka ,  Yuki Okuwa ,  Shinya Iwashina

IPC: H01L31/16 ,  H01L31/0232 ,  H01L33/60 ,  G01C9/06

Abstract: An optical sensor includes: a light emitting element 40; a lower substrate 20 on which the light emitting element 40 is provided; an upper substrate 10 provided so that the light emitting element 40 is positioned between the upper substrate 10 and the lower substrate 20; and an optical block 30 provided on the upper substrate 10. The upper substrate 10 includes a division-type photodiode SD. The optical block 30 is configured to reflect light emitted from the light emitting element 40 toward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.

公开(公告)号：US09620662B2

公开(公告)日：2017-04-11

申请号：US14855968

申请日：2015-09-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Koei Yamamoto ,  Kenzo Hayatsu ,  Terumasa Nagano ,  Yuki Okuwa ,  Ryuta Yamada

IPC: H01L31/107 ,  H01L31/028 ,  H01L27/146

CPC classification number: H01L31/107 ,  H01L27/14603 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/028 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/16195 ,  H01L2924/00014

Abstract: An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.