公开(公告)号：US20220359749A1

公开(公告)日：2022-11-10

申请号：US17564688

申请日：2021-12-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Seong Hyun LEE ,  Dongwoo SUH ,  Sang Hoon KIM ,  Jeong Woo PARK ,  Tae Moon ROH

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.

公开(公告)号：US20140105235A1

公开(公告)日：2014-04-17

申请号：US13776428

申请日：2013-02-25

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  JiHo JOO

IPC: H01S5/30

CPC classification number: H01S5/3031 ,  G02B6/12004 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/3223 ,  Y10S438/933

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。

公开(公告)号：US20140048772A1

公开(公告)日：2014-02-20

申请号：US13949081

申请日：2013-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  In Gyoo KIM ,  Jin Hyuk OH ,  Sun Ae KIM

IPC: H01L33/06 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L31/035227 ,  H01L31/035254 ,  H01L31/107 ,  H01L33/0054 ,  Y10S977/762 ,  Y10S977/774 ,  Y10S977/954

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。

公开(公告)号：US20160202504A1

公开(公告)日：2016-07-14

申请号：US14848077

申请日：2015-09-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0155 ,  G02F2001/0157

Abstract: Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof

Abstract translation: 提供了一种光学调制器，其包括光波导和光调制部分，其集成在光波导上，其被包覆在氧化物硅中并且通过使用体硅晶片代替绝缘体上硅（SOI）而具有硅作为核， 典型的光波导和光学调制器，并使用互补金属氧化物半导体（CMOS）和热氧化膜形成工艺及其制造方法

公开(公告)号：US20140346532A1

公开(公告)日：2014-11-27

申请号：US14062454

申请日：2013-10-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  Myung Joon KWACK

IPC: H01L31/167 ,  G02B6/42

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Abstract translation: 公开了一种光输入/输出装置和包括其的光电系统。 该器件包括体硅衬底，整体地集成在体硅衬底的一部分上的至少一个垂直输入光检测元件以及整体集成在体硅衬底的另一部分上的至少一个垂直输出光源元件， 垂直输入光检测元件。 垂直输出光源元件包括通过晶片接合方法与体硅衬底组合的III-V化合物半导体光源有源层。