THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240006516A1

    公开(公告)日:2024-01-04

    申请号:US18321433

    申请日:2023-05-22

    Abstract: An embodiment of the inventive concept provides a thin film transistor and a manufacturing method of the same. The manufacturing method includes forming a data electrode on one side of a substrate, forming a spacer layer on a portion of the data electrode and the other side of the substrate, forming a drain electrode on a top surface of the spacer layer, forming an active layer on a sidewall of the spacer layer, the drain electrode, and the data electrode, forming a gate insulation film that covers the active layer on the sidewall of the spacer layer, and forming a doped layer on the gate insulation film and the active layer outside the gate insulation film to form impurity regions at both sides, respectively, of the active layer.

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