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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    14.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150349136A1

    公开(公告)日：2015-12-03

    申请号：US14611142

    申请日：2015-01-30

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Jae Bon KOO ,  Chan Woo PARK ,  Soon-Won JUNG ,  Bock Soon NA ,  Sang Chul LIM ,  Sang Seok LEE ,  Kyoung Ik CHO ,  Hye Yong CHU

    IPC: H01L29/786 ,  H01L21/428 ,  H01L21/02 ,  H01L29/66

    CPC classification number: H01L29/78603 ,  H01L21/428 ,  H01L21/7813 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/1292 ,  H01L29/66969 ,  H01L29/7869

    Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices.

    Abstract translation: 根据本发明的实施例的制造半导体器件的方法可以包括提供包括布线区域和器件区域的牺牲衬底，在牺牲衬底上依次形成牺牲层和缓冲层，在缓冲器上形成薄膜晶体管 在器件区域内形成围绕薄膜晶体管的器件保护元件，在缓冲层上形成柔性衬底，并通过去除牺牲层来分离牺牲衬底来暴露缓冲层的表面。 由于可以直接使用典型的半导体工艺技术，因此可以提高工艺兼容性，并且可以制造具有高分辨率和高性能的半导体器件。 此外，由于薄膜晶体管被器件保护元件保护，所以可以防止半导体器件在柔性条件下的变形，从而提高半导体器件的可靠性。

    FLEXIBLE TOUCH PANEL AND METHOD OF MANUFACTURING THEREOF
    17.
    发明公开
    FLEXIBLE TOUCH PANEL AND METHOD OF MANUFACTURING THEREOF 审中-公开

    公开(公告)号：US20230152930A1

    公开(公告)日：2023-05-18

    申请号：US17903145

    申请日：2022-09-06

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Chan Woo PARK ,  Sang Hoon CHEON ,  Tae-Youb KIM ,  Bock Soon NA ,  Ji-Young OH ,  Su Jae LEE

    IPC: G06F3/044

    CPC classification number: G06F3/0446 ,  G06F2203/04111 ,  G06F2203/04112 ,  G06F2203/04102 ,  G06F2203/04103

    Abstract: Provided is a flexible touch panel. The flexible touch panel includes a first sensor part extending in a first direction on a substrate, a second sensor part extending in a second direction crossing the first direction on the substrate, and a protective layer surrounding the first and second sensor parts, wherein the first sensor part includes first sensor patterns spaced apart from each other in the first direction, a first connection electrode disposed between the first sensor patterns adjacent to each other, and first connection patterns connecting the first connection electrode and the first sensor patterns to each other, wherein each of the first sensor patterns includes first electrode patterns spaced apart from each other in a form of a mesh and first wiring patterns connecting the adjacent first electrode patterns to each other, wherein each of the first wiring patterns and the first connection patterns has a serpentine structure, wherein the first electrode patterns and the first wiring patterns include the same material as each other.

    ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
    19.
    发明申请
    ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    电子设备及其制造方法

    公开(公告)号：US20150348800A1

    公开(公告)日：2015-12-03

    申请号：US14610410

    申请日：2015-01-30

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Kyoung Ik CHO ,  Jae Bon KOO ,  Chan Woo PARK ,  Bock Soon NA ,  Sang Seok LEE ,  Sang Chul LIM ,  Soon-Won JUNG ,  Hye Yong CHU

    IPC: H01L21/311 ,  H01L29/66 ,  H01L29/786

    CPC classification number: H01L29/78603 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/66742

    Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

    Abstract translation: 本发明提供一种电子器件的制造方法，该方法包括：制备包括元件区域和布线区域的载体衬底; 在载体基板上形成牺牲层; 在元件区域的牺牲层上形成电子元件; 在布线区域的第一弹性层上形成具有波纹状表面的第一弹性层; 在布线区域的第一弹性层上形成电连接电子元件的金属配线; 在所述第一弹性层上形成覆盖所述金属布线的第二弹性层; 在所述电子元件上方的所述第二弹性层的凹部中形成高刚性图案，以与所述电子元件重叠，并具有波纹状表面; 在第二弹性层上形成第三弹性层和高刚性图案; 并分离载体衬底。

    ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME
    20.
    发明申请
    ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME 有权
    用于大面积打印的主动夹层及其制造方法及使用其的印刷方法

    公开(公告)号：US20150273833A1

    公开(公告)日：2015-10-01

    申请号：US14738047

    申请日：2015-06-12

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Yong Suk YANG ,  In-Kyu YOU ,  Soon-Won JUNG ,  Bock Soon NA ,  Seok-Hwan MOON

    IPC: B41J2/16

    CPC classification number: B41J2/1626 ,  B41J2/06 ,  B41J2/14 ,  B41J2/16 ,  B41J2/162 ,  B41J2/1621 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/04

    Abstract: Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes.

    Abstract translation: 提供了一种大面积纳米级活性印刷装置及其制造方法，以及使用其的印刷方法。 打印装置可以包括基板，沿着第一方向延伸的第一互连线，在基板上，设置在第一互连线上的具有部分地暴露第一互连线的孔的层间电介质层，邻近孔的第二互连线 所述层间电介质层与所述第一互连线交叉，以及设置在与所述第一和第二互连线交叉并与所述第一互连线连接的楔形电极。 楔形电极在孔的中心向上突出。

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