公开(公告)号：US20170207248A1

公开(公告)日：2017-07-20

申请号：US15324791

申请日：2016-04-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda SUN ,  Youngsuk SONG ,  Jingang FANG

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L27/1244 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/786

Abstract: The application provides a thin film transistor, a method for manufacturing the thin film transistor, and a display panel, the thin film transistor includes a metal electrode, and a step of forming the metal electrode includes: forming a first material layer on a substrate; performing a pattering process on the first material layer to form a groove pattern in the first material layer such that the groove pattern matches with a pattern of the metal electrode to be formed; forming the metal electrode in the groove pattern such that a gap is formed between an edge of the metal electrode and an edge of the groove pattern; forming a protection pattern on the substrate formed with the metal electrode such that the protection pattern covers the metal electrode and its edge. In the application, the protection pattern is formed on the resultant metal electrode and can effectively protect conductive metal.

公开(公告)号：US20170170433A1

公开(公告)日：2017-06-15

申请号：US15306886

申请日：2016-03-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang FANG ,  Wulin SHEN ,  Hongda SUN ,  Chun I Lin

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5284 ,  H01L27/322 ,  H01L51/0004 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

Abstract: A display substrate, a method for manufacturing the same and a display device are provided. The display substrate includes a black matrix disposed between adjacent pixels, and a sidewall of the black matrix is a concave curved surface. Since the sidewall of the black matrix is formed as a concave curved surface, when color film droplets in one sub-pixel splash to the sidewall of the black matrix in forming of a color film, the droplets can return into the sub-pixel along the curved surface, thereby avoiding contamination to adjacent pixels by the droplets splashing, and ensuring substrate yield.

公开(公告)号：US20170162629A1

公开(公告)日：2017-06-08

申请号：US15307090

申请日：2016-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda SUN ,  Xuyuan LI ,  Meili WANG

IPC: H01L27/32 ,  H01L51/52 ,  H01L21/77 ,  H01L51/56

CPC classification number: H01L27/32 ,  H01L21/77 ,  H01L27/3246 ,  H01L27/3274 ,  H01L51/52 ,  H01L51/5296 ,  H01L51/56

Abstract: A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate layer disposed on the substrate, a gate insulating layer disposed on the gate layer, a pixel defining layer disposed on the gate insulating layer, the pixel defining layer includes a plurality of defining regions, a light emitting layer in the defining regions of the pixel defining layer disposed on the gate insulating layer, wherein the light emitting layer includes an electron excitation layer, a light excitation layer and a hole excitation layer, and a source/drain layer disposed on the light emitting layer. According to an embodiment of the present disclosure, light emission and control of light emission can be realized merely by a three-layer structure of a gate layer, a light emitting layer and a source/drain layer, and compared with the OLED light emitting structure of the prior art, the layer structure is simpler, the light emitted is less blocked, and luminous efficiency is higher.

公开(公告)号：US20160262256A1

公开(公告)日：2016-09-08

申请号：US14353389

申请日：2013-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Hongda SUN ,  Fengjuan LIU

IPC: H05K1/02 ,  H05K3/46

CPC classification number: H05K1/028 ,  H01L21/4846 ,  H01L21/6835 ,  H01L23/00 ,  H01L25/105 ,  H01L51/003 ,  H01L51/5228 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2251/5338 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K3/022 ,  H05K3/4644 ,  H05K2201/0195 ,  H05K2203/0235 ,  H05K2203/068 ,  H01L2924/00

Abstract: A method for fabricating a flexible substrate and a flexible substrate prefabricated component are disclosed, the flexible substrate comprises an electronic device and a flexible layer provided with the electronic device. The fabrication method comprises: disposing a single-sided adhesive layer at a central portion of a surface of a support substrate, an adhesive side of the single-sided adhesive layer being in contact with the support substrate; disposing a double-sided adhesive layer at a peripheral region of the support substrate; disposing the flexible layer on surfaces of the single-sided adhesive layer and the double-sided adhesive layer, the flexible layer being bonded to the double-sided adhesive layer; disposing the electronic device in a region of a surface of the flexible layer corresponding to the single-sided adhesive layer; cutting the flexible layer along a boundary of the electronic device and removing the flexible layer from the single-sided adhesive layer.

Abstract translation: 公开了一种用于制造柔性基板和柔性基板预制部件的方法，柔性基板包括电子装置和设置有电子装置的柔性层。 制造方法包括：在支撑基板的表面的中心部分处设置单面粘合剂层，单面粘合剂层的粘合剂侧与支撑基板接触; 在支撑基板的周边区域设置双面粘合剂层; 将柔性层设置在单面粘合剂层和双面粘合剂层的表面上，柔性层粘合到双面粘合剂层上; 将所述电子器件设置在与所述单面粘合剂层相对应的所述柔性层的表面的区域中; 沿着电子设备的边界切割柔性层并从柔性层从单面粘合剂层移除。

公开(公告)号：US20160043116A1

公开(公告)日：2016-02-11

申请号：US14429168

申请日：2014-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda SUN ,  Jun CHENG ,  Meili WANG ,  Xiangyong KONG

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1288 ,  H01L21/28008 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78636 ,  H01L29/78669 ,  H01L29/7869

Abstract: The present invention discloses a thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof and a display device. The thin film transistor comprises a substrate, and a gate, an active layer, a source, a drain and an insulation layer which are provided on the substrate, the source and the drain are provided in the same layer, and the insulation layer is provided between the gate and the source and drain. A gate preformed layer is provided in the same layer as the gate, and the gate is formed in the gate preformed layer. A source/drain preformed layer is provided in the same layer as the source and the drain, and the source and the drain are formed in the source/drain preformed layer.

Abstract translation: 本发明公开了一种薄膜晶体管及其制造方法，阵列基板及其制造方法以及显示装置。 薄膜晶体管包括衬底，设置在衬底上的栅极，有源层，源极，漏极和绝缘层，源极和漏极设置在同一层中，并且提供绝缘层 在门与源与漏之间。 栅极预成型层设置在与栅极相同的层中，并且栅极形成在栅极预成型层中。 源/漏预制层设置在与源极和漏极相同的层中，并且源极和漏极形成在源/漏预定层中。

公开(公告)号：US20230317826A1

公开(公告)日：2023-10-05

申请号：US18022620

申请日：2022-03-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fengjuan LIU ,  Dongfang WANG ,  Wei LIU ,  Yuhang LU ,  Hongda SUN ,  Ce NING ,  Guangcai YUAN

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/40

CPC classification number: H01L29/66742 ,  H01L29/401 ,  H01L29/7869

Abstract: A method for manufacturing a thin film transistor, and a thin film transistor are provided. The method includes: forming an active layer on a substrate by a single patterning process; forming a gate insulating layer by deposition on a side of the active layer away from the substrate; forming a first via hole and a second via hole penetrating through the gate insulating layer by a single patterning process, the first and second via holes being located at two ends of the active layer respectively; and forming a first electrode, a gate electrode, and a second electrode on the gate insulating layer by a single patterning process, the first and second electrodes being connected to the active layer through the first and second via holes, respectively, and an orthographic projection of the gate electrode on the substrate at least partially overlapping that of the active layer on the substrate.

公开(公告)号：US20210191213A1

公开(公告)日：2021-06-24

申请号：US16908547

申请日：2020-06-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Hongda SUN

IPC: G02F1/155 ,  G02F1/163

Abstract: A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.

公开(公告)号：US20200035834A1

公开(公告)日：2020-01-30

申请号：US16077846

申请日：2018-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Young Suk SONG ,  Hongda SUN ,  Guoying WANG ,  Wei LIU

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/44 ,  H01L29/66

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

公开(公告)号：US20190267493A1

公开(公告)日：2019-08-29

申请号：US16330990

申请日：2018-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG ,  Hongda SUN

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.

公开(公告)号：US20190245018A1

公开(公告)日：2019-08-08

申请号：US16335484

申请日：2018-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Hongda SUN ,  Guoying WANG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3246 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/5253 ,  H01L51/56

Abstract: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.