公开(公告)号：US20180034007A1

公开(公告)日：2018-02-01

申请号：US15126839

申请日：2015-12-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong He ,  Shi Shu ,  Wei Xu ,  Zhanfeng Cao ,  Qi Yao

IPC: H01L51/56 ,  H01L51/52

CPC classification number: H01L51/56 ,  H01L27/3283 ,  H01L51/5209 ,  H01L51/5225

Abstract: An electrode structure and an organic light emitting unit and the manufacturing method thereof are disclosed. The electrode structure includes: a substrate; a plurality of strip-like partitions disposed on the substrate; and an electrode covering a surface of the substrate. The electrode includes a first portion located on a surface of each of the strip-like partitions and a second portion located between two adjacent strip-like partitions, each of the strip-like partitions includes an upper layer and a lower layer which are stacked with each other, the upper layer and the lower layer are made of different materials; a bottom surface of the upper layer completely covers a top surface of the lower layer, and a width of the bottom surface of the upper layer is larger than a width of the top surface of the lower layer in a plane perpendicular to an extending direction of the strip-like partitions.

公开(公告)号：US09812472B2

公开(公告)日：2017-11-07

申请号：US15308991

申请日：2016-01-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qi Yao ,  Feng Zhang ,  Zhanfeng Cao ,  Xiaolong He ,  Bin Zhang ,  Zhengliang Li

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L27/1288 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.

公开(公告)号：US20160336458A1

公开(公告)日：2016-11-17

申请号：US15149587

申请日：2016-05-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract translation: 公开了薄膜晶体管，其制造方法，阵列基板和显示装置。 制造薄膜晶体管的方法包括：形成半导体层; 在作为保护层的半导体层上形成不与酸溶液反应的导电膜; 在保护层上形成源电极和漏电极; 以及去除所述源电极和所述漏极之间的所述保护层的一部分，以暴露所述源电极和所述漏电极之间的所述半导体层的一部分。

公开(公告)号：US10748941B2

公开(公告)日：2020-08-18

申请号：US16106502

申请日：2018-08-21

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Juan Chen ,  Yue Shi

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/13357 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368

Abstract: A light valve structure, a manufacturing method therefor, an operating method therefor, an array substrate and an electronic device are provided. The light valve structure includes a base substrate, a light-transmissive part and a light-shielding part. The light-transmissive part is disposed on the base substrate and light-transmissive, and it at least includes a first electrode. The light-shielding part is disposed on the light-transmissive part; a first end of the light-shielding part is fixed relative to the light-transmissive part; and the light-shielding part includes a base layer and a second electrode layered on the base layer. The light-shielding part is configured to be curled so as to be away from the light-transmissive part, and/or the light-shielding part is configured to be spread due to the mutual adsorption between the first electrode and the second electrode, so as to be superimposed on the light-transmissive part.

公开(公告)号：US10714506B2

公开(公告)日：2020-07-14

申请号：US15921964

申请日：2018-03-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Huili Wu ,  Jianming Sun ,  Shipei Li ,  Xiaolong He

IPC: H01L27/12 ,  G02F1/133 ,  G06F3/041 ,  H01L31/105 ,  G06K9/00 ,  H01L27/32

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.

公开(公告)号：US10465279B2

公开(公告)日：2019-11-05

申请号：US15501729

申请日：2016-07-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Can Wang ,  Xiaolong He ,  Xuefei Sun

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

Abstract: A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being rotatable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets. When the target mounting body rotates around the axis of the mounting shaft, each of the target mounting surfaces may be switched between an operating state orientation and an idle orientation.

公开(公告)号：US10281782B2

公开(公告)日：2019-05-07

申请号：US15229601

申请日：2016-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Shi Shu ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Qi Yao ,  Jincheng Gao ,  Feng Guan ,  Xuefei Sun

IPC: H01L21/02 ,  G02F1/1362 ,  H01L27/12

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

公开(公告)号：US10199504B2

公开(公告)日：2019-02-05

申请号：US14905251

申请日：2015-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Qi Yao ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L29/10 ,  H01L29/786 ,  H01L21/28 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

公开(公告)号：US10192893B2

公开(公告)日：2019-01-29

申请号：US14895352

申请日：2015-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Feng Zhang ,  Qi Yao ,  Jincheng Gao ,  Bin Zhang ,  Xiaolong He ,  Zhengliang Li ,  Wei Zhang

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1345

Abstract: An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and a driving module (60) in a peripheral region (1) outside a display region (2); the connecting lines (50) are configured for connecting the signal lines (40) and the driving module (60), to transmit signal from the signal lines (40) to the driving module (60), wherein, at least one of the connecting lines (50) and at least one of the signal lines (40) are designed to intersect with and insulated from each other in a first region (N). The at least one of the signal lines (40) includes, in a second region (0) other than the first region (N), a first electrode line layer (401) and a second electrode line layer (402), while, in the first region (N), includes the first electrode line layer (401) but does not include the second electrode line layer (402). The array substrate may prevent problems of electrostatic accumulation or short circuit from occurring between the connecting lines (50) and the second electrode line layer (402).

公开(公告)号：US10126544B2

公开(公告)日：2018-11-13

申请号：US15525445

申请日：2016-07-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Zhanfeng Cao ,  Qi Yao ,  Bin Zhang ,  Zhengliang Li ,  Wei Zhang ,  Tingting Zhou ,  Jincheng Gao ,  Jiushi Wang

IPC: G02B26/00

Abstract: A display panel includes a first substrate and a second substrate which are arranged opposed to each other. The space between the first substrate and the second substrate is separated into a plurality of sub-pixel regions. Within each sub pixel region, a first electrode, a first fluid layer, a second fluid layer, a hydrophobic dielectric layer and a second electrode are arranged in this order. The first fluid layer is made of hydrophilic liquid. The second fluid layer is made of ink. When no electric field is applied between the first electrode and the second electrode, the ink spreads over the surface of the hydrophobic dielectric layer. When an electric field is applied between the first electrode and the second electrode, the ink aggregates to expose the hydrophobic dielectric layer.