公开(公告)号：US20190305156A1

公开(公告)日：2019-10-03

申请号：US16169365

申请日：2018-10-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Jianming Sun ,  Yingwei Liu

IPC: H01L31/032 ,  H01L27/32 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/0392

Abstract: A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

公开(公告)号：US20190019813A1

公开(公告)日：2019-01-17

申请号：US15972096

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Woobong Lee ,  Fengchao Wang ,  Jianming Sun ,  Yingwei Liu ,  Wei Yang ,  Dongsheng Li

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/0224

Abstract: The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.

公开(公告)号：US20150295094A1

公开(公告)日：2015-10-15

申请号：US14342234

申请日：2013-07-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Wei Guo ,  Qianqian Bu ,  Lei Zhao ,  Lu Wang ,  Zhiqiang Jiang

IPC: H01L29/786 ,  H01L21/306 ,  H01L29/45 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/28568 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76841 ,  H01L29/456 ,  H01L29/66757

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display device are provided. The method for manufacturing the thin film transistor including: forming an active layer; forming an etch barrier layer on the active layer at a position for forming interlayer via holes subsequently; forming an insulating layer on the active layer and the etch barrier layer, and forming the interlayer via holes in the insulating layer to expose the etch barrier layer.

Abstract translation: 提供薄膜晶体管，其制造方法，阵列基板和显示装置。 薄膜晶体管的制造方法，其特征在于，包括：形成有源层; 在随后形成中间通孔的位置上在活性层上形成蚀刻阻挡层; 在有源层和蚀刻阻挡层上形成绝缘层，以及在绝缘层中形成中间层通孔以露出蚀刻阻挡层。

公开(公告)号：US11233098B2

公开(公告)日：2022-01-25

申请号：US16078560

申请日：2018-01-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Rui Xu ,  Haisheng Wang ,  Yingming Liu ,  Changfeng Li ,  Wei Liu ,  Qingrong Ren ,  Yu Wen

IPC: G06K9/00 ,  H01L27/32 ,  H01L27/12 ,  H01L51/50

Abstract: A display array substrate, a manufacturing method and a display are disclosed herein. The display array substrate includes an array substrate base, an electroluminescent diode array substrate arranged above the array substrate base, including an anode layer, a cathode layer, an electroluminescent EL layer between the anode layer and the cathode layer, and a pixel compensation circuit layer on a side close to the array substrate base. The cathode layer is on a side away from the array substrate base. A photosensitive signal collector may be configured to receive an optical signal reflected by valleys and ridges of a finger and emitted by the electroluminescent EL layer, and convert the collected optical signal into an electrical signal to be output. The photosensitive signal collector may be arranged between the pixel compensation circuit layer and the anode layer of the electroluminescent diode array substrate.

公开(公告)号：US11217614B2

公开(公告)日：2022-01-04

申请号：US16321658

申请日：2018-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qianqian Bu ,  Qingrong Ren ,  Jianming Sun

IPC: H01L27/146 ,  G06F3/042 ,  G06F3/041

Abstract: A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.

公开(公告)号：US11011645B2

公开(公告)日：2021-05-18

申请号：US16446744

申请日：2019-06-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Guangcai Yuan ,  Feng Guan ,  Dongsheng Li ,  Jianming Sun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

公开(公告)号：US20200013902A1

公开(公告)日：2020-01-09

申请号：US16446744

申请日：2019-06-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Guangcai Yuan ,  Feng Guan ,  Dongsheng Li ,  Jianming Sun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

公开(公告)号：US20190252456A1

公开(公告)日：2019-08-15

申请号：US16332932

申请日：2018-07-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongsheng Li ,  Huili Wu ,  Qingrong Ren ,  Shipei Li ,  Xuefei Sun ,  Dongsheng Yin

IPC: H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L27/14678 ,  G06K9/0004 ,  G06K9/00087 ,  H01L27/144 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14689 ,  H01L29/78633 ,  H01L29/7869 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/105

Abstract: The present disclosure generally relates to the field of detection technology. A sensor includes a base substrate; a voltage dividing photodiode on the base substrate; and a detecting photodiode on the base substrate. The voltage dividing photodiode may include a first electrode and a second electrode arranged in a stack. The detecting photodiode may include a third electrode and a fourth electrode arranged in a stack. The voltage dividing photodiode is configured to operate substantially permanently in a dark state. The detecting photodiode is configured to operate with a reverse bias applied by the first power terminal and the second power terminal, so as to detect a light intensity.

公开(公告)号：US09377539B2

公开(公告)日：2016-06-28

申请号：US14518341

申请日：2014-10-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Guo ,  Qianqian Bu ,  Qingrong Ren ,  Zhao Kang

IPC: G01T1/20 ,  H01L31/18

CPC classification number: G01T1/2002 ,  G01T1/2018 ,  H01L31/1804

Abstract: An X-ray detection board and a manufacture method thereof, and an X-ray detection device are disclosed in the embodiments of the present invention. The X-ray detection board comprises: a substrate; photoelectric conversion devices disposed on the substrate; a conversion layer disposed on the photoelectric conversion devices and configured to convert X-rays into visible light; and a packaging layer disposed on the conversion layer and having a plurality of transmission windows, wherein the photoelectric conversion devices correspond in position to the transmission windows, respectively, and wherein condenser lenses for condensing the light converted by the conversion layer are disposed on sides of the photoelectric conversion devices facing the transmission windows. A light condensing effect is improved by use of the condenser lenses such as microlenses so that more light can be projected upon the photoelectric conversion devices through the condenser lenses. As a result, a quantum efficiency and thus an imaging effect are improved.

Abstract translation: 在本发明的实施例中公开了X射线检测板及其制造方法以及X射线检测装置。 X射线检测板包括：基板; 设置在基板上的光电转换装置; 转换层，设置在所述光电转换装置上，并将X射线转换为可见光; 以及设置在所述转换层上并具有多个透射窗的包装层，其中所述光电转换装置分别对应于所述透射窗的位置，并且其中用于将由所述转换层转换的光聚光的聚光透镜设置在 光电转换装置面向传输窗口。 通过使用诸如微透镜的聚光透镜来提高聚光效果，使得可以通过聚光透镜将更多的光投射到光电转换装置上。 结果，改善了量子效率和因此成像效果。