公开(公告)号：US20220359279A1

公开(公告)日：2022-11-10

申请号：US17316649

申请日：2021-05-10

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Mingrui ZHAO ,  Peiqi WANG ,  Wei Min CHAN ,  Kai WU ,  Yi LUO ,  Liqi WU

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/06

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

公开(公告)号：US20200303250A1

公开(公告)日：2020-09-24

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Feiyue MA ,  Kai WU ,  Yu LEI ,  Kazuya DAITO ,  Yi XU ,  Vikash BANTHIA ,  Mei CHANG ,  He REN ,  Raymond Hoiman HUNG ,  Yakuan YAO ,  Avgerinos V. GELATOS ,  David T. OR ,  Jing ZHOU ,  Guoqiang JIAN ,  Chi-Chou LIN ,  Yiming LAI ,  Jia YE ,  Jenn-Yue WANG

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20240047268A1

公开(公告)日：2024-02-08

申请号：US18353447

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Xi CEN ,  Dixiong WANG ,  Mingrui ZHAO ,  Yang LI ,  Kai WU

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

公开(公告)号：US20230290679A1

公开(公告)日：2023-09-14

申请号：US17654077

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  H01L23/532 ,  C23C16/14

CPC classification number: H01L21/76876 ,  H01L23/53261 ,  H01L23/53266 ,  H01L21/76846 ,  C23C16/14 ,  H01L21/28568

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US20220336274A1

公开(公告)日：2022-10-20

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20220130724A1

公开(公告)日：2022-04-28

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.